电子模GaN HEMT技术中电路的单片集成

Power electronic devices and components Pub Date : 2025-04-09 DOI:10.1016/j.pedc.2025.100089

Plinio Bau, Thanh Hai Phung, Stephane Driussi, Thomas Beauchene

{"title":"电子模GaN HEMT技术中电路的单片集成","authors":"Plinio Bau, Thanh Hai Phung, Stephane Driussi, Thomas Beauchene","doi":"10.1016/j.pedc.2025.100089","DOIUrl":null,"url":null,"abstract":"<div><div>This work presents a power transistor with monolithically integrated gate driver and auxiliary circuit in the same GaN-on-Si die. It presents the design, the characterization and validation tests in a PCB similarly to a final application for this device. The target application is for USB-C chargers and power supplies for data centers. The technology is 650 V pGaN with Schottky gate. Simulation from -40 to 150 °C are performed and also fabrication process variation analysis (SS, FF) compared to typical values (TT).</div></div>","PeriodicalId":74483,"journal":{"name":"Power electronic devices and components","volume":"11 ","pages":"Article 100089"},"PeriodicalIF":0.0000,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Monolithic integration of circuits in e-mode GaN HEMT technology\",\"authors\":\"Plinio Bau, Thanh Hai Phung, Stephane Driussi, Thomas Beauchene\",\"doi\":\"10.1016/j.pedc.2025.100089\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This work presents a power transistor with monolithically integrated gate driver and auxiliary circuit in the same GaN-on-Si die. It presents the design, the characterization and validation tests in a PCB similarly to a final application for this device. The target application is for USB-C chargers and power supplies for data centers. The technology is 650 V pGaN with Schottky gate. Simulation from -40 to 150 °C are performed and also fabrication process variation analysis (SS, FF) compared to typical values (TT).</div></div>\",\"PeriodicalId\":74483,\"journal\":{\"name\":\"Power electronic devices and components\",\"volume\":\"11 \",\"pages\":\"Article 100089\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-04-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Power electronic devices and components\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2772370425000148\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Power electronic devices and components","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2772370425000148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一种单片集成栅极驱动器和辅助电路的功率晶体管。它介绍了类似于该器件的最终应用的PCB中的设计，表征和验证测试。目标应用是数据中心的USB-C充电器和电源。该技术是650v的pGaN和肖特基栅极。从-40°C到150°C进行了模拟，并与典型值（TT）进行了制造过程变化分析（SS， FF）。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Monolithic integration of circuits in e-mode GaN HEMT technology

查看原文本刊更多论文

Monolithic integration of circuits in e-mode GaN HEMT technology

This work presents a power transistor with monolithically integrated gate driver and auxiliary circuit in the same GaN-on-Si die. It presents the design, the characterization and validation tests in a PCB similarly to a final application for this device. The target application is for USB-C chargers and power supplies for data centers. The technology is 650 V pGaN with Schottky gate. Simulation from -40 to 150 °C are performed and also fabrication process variation analysis (SS, FF) compared to typical values (TT).

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Power electronic devices and components Hardware and Architecture, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Safety, Risk, Reliability and Quality

CiteScore

2.00

自引率

0.00%

发文量

审稿时长

80 days