基于 MoO3 Decorated PSi 的高效可扩展光 Memristor 器件

IF 2.3 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Photonics Technology Letters Pub Date : 2025-03-24 DOI:10.1109/LPT.2025.3554023

Sharmila B;Ashutosh Kumar Dikshit;Priyanka Dwivedi

{"title":"基于 MoO3 Decorated PSi 的高效可扩展光 Memristor 器件","authors":"Sharmila B;Ashutosh Kumar Dikshit;Priyanka Dwivedi","doi":"10.1109/LPT.2025.3554023","DOIUrl":null,"url":null,"abstract":"This letter presents the development of wafer scalable optical memristor devices using molybdenum trioxide (MoO3) decorated porous silicon (PSi). The devices were tested with electrical and optical stimuli at room temperature. The test results have shown that the MoO3 decorated PSi based memristor offers improved performance metrics like high responsivity (826mA/W), high detectivity (<inline-formula> <tex-math>$1.08\\times 10^{\\mathbf {11}}$ </tex-math></inline-formula>Jones), fast response speed (84.1/<inline-formula> <tex-math>$80.1\\mu $ </tex-math></inline-formula>s), high paired pulse facilitation (PPF) index (461 %) and high endurance (100 cycles). The value of the responsivity is <inline-formula> <tex-math>$\\sim 3\\times 10^{\\mathbf {2}}$ </tex-math></inline-formula> times and ~4.5 times higher than PSi and MoO3 based devices respectively. The MoO3 decorated PSi device is highly repeatable, reliable and reproducible for ultrafast varying signals. These developed devices can be used for broadband light sensing as well as resistive switching applications.","PeriodicalId":13065,"journal":{"name":"IEEE Photonics Technology Letters","volume":"37 9","pages":"524-527"},"PeriodicalIF":2.3000,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Efficient Scalable MoO3 Decorated PSi Based Optical Memristor Devices\",\"authors\":\"Sharmila B;Ashutosh Kumar Dikshit;Priyanka Dwivedi\",\"doi\":\"10.1109/LPT.2025.3554023\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter presents the development of wafer scalable optical memristor devices using molybdenum trioxide (MoO3) decorated porous silicon (PSi). The devices were tested with electrical and optical stimuli at room temperature. The test results have shown that the MoO3 decorated PSi based memristor offers improved performance metrics like high responsivity (826mA/W), high detectivity (<inline-formula> <tex-math>$1.08\\\\times 10^{\\\\mathbf {11}}$ </tex-math></inline-formula>Jones), fast response speed (84.1/<inline-formula> <tex-math>$80.1\\\\mu $ </tex-math></inline-formula>s), high paired pulse facilitation (PPF) index (461 %) and high endurance (100 cycles). The value of the responsivity is <inline-formula> <tex-math>$\\\\sim 3\\\\times 10^{\\\\mathbf {2}}$ </tex-math></inline-formula> times and ~4.5 times higher than PSi and MoO3 based devices respectively. The MoO3 decorated PSi device is highly repeatable, reliable and reproducible for ultrafast varying signals. These developed devices can be used for broadband light sensing as well as resistive switching applications.\",\"PeriodicalId\":13065,\"journal\":{\"name\":\"IEEE Photonics Technology Letters\",\"volume\":\"37 9\",\"pages\":\"524-527\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2025-03-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Photonics Technology Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10937739/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Photonics Technology Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10937739/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

这封信介绍了使用三氧化钼（MoO3）装饰多孔硅（PSi）的晶圆可扩展光学忆阻器器件的发展。这些装置在室温下进行了电光刺激测试。测试结果表明，MoO3修饰的基于PSi的忆阻器具有更高的性能指标，如高响应率（826mA/W），高探测率（$1.08\times 10^{\mathbf {11}}$ Jones），快速响应速度（84.1/ $80.1\mu $ s），高对脉冲促进（PPF）指数（461） %) and high endurance (100 cycles). The value of the responsivity is $\sim 3\times 10^{\mathbf {2}}$ times and ~4.5 times higher than PSi and MoO3 based devices respectively. The MoO3 decorated PSi device is highly repeatable, reliable and reproducible for ultrafast varying signals. These developed devices can be used for broadband light sensing as well as resistive switching applications.

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Efficient Scalable MoO3 Decorated PSi Based Optical Memristor Devices

This letter presents the development of wafer scalable optical memristor devices using molybdenum trioxide (MoO3) decorated porous silicon (PSi). The devices were tested with electrical and optical stimuli at room temperature. The test results have shown that the MoO3 decorated PSi based memristor offers improved performance metrics like high responsivity (826mA/W), high detectivity (

$1.08\times 10^{\mathbf {11}}$

Jones), fast response speed (84.1/

$80.1\mu $

s), high paired pulse facilitation (PPF) index (461 %) and high endurance (100 cycles). The value of the responsivity is

$\sim 3\times 10^{\mathbf {2}}$

times and ~4.5 times higher than PSi and MoO3 based devices respectively. The MoO3 decorated PSi device is highly repeatable, reliable and reproducible for ultrafast varying signals. These developed devices can be used for broadband light sensing as well as resistive switching applications.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Photonics Technology Letters 工程技术-工程：电子与电气

CiteScore

5.00

自引率

3.80%

发文量

404

审稿时长

2.0 months

期刊介绍： IEEE Photonics Technology Letters addresses all aspects of the IEEE Photonics Society Constitutional Field of Interest with emphasis on photonic/lightwave components and applications, laser physics and systems and laser/electro-optics technology. Examples of subject areas for the above areas of concentration are integrated optic and optoelectronic devices, high-power laser arrays (e.g. diode, CO2), free electron lasers, solid, state lasers, laser materials'' interactions and femtosecond laser techniques. The letters journal publishes engineering, applied physics and physics oriented papers. Emphasis is on rapid publication of timely manuscripts. A goal is to provide a focal point of quality engineering-oriented papers in the electro-optics field not found in other rapid-publication journals.