Engin Özkol , Maria M.R. Magalhães , Yifeng Zhao , Liqi Cao , Paula Perez-Rodriguez , Katarina Kovačević , Paul Procel , Manuel João Mendes , Miro Zeman , Olindo Isabella
{"title":"室温射频溅射 ICO 作为 TCO 层在高性能 SHJ 太阳能电池中的优化与集成","authors":"Engin Özkol , Maria M.R. Magalhães , Yifeng Zhao , Liqi Cao , Paula Perez-Rodriguez , Katarina Kovačević , Paul Procel , Manuel João Mendes , Miro Zeman , Olindo Isabella","doi":"10.1016/j.solmat.2025.113637","DOIUrl":null,"url":null,"abstract":"<div><div>In this work, we optimize cerium-doped indium oxide – ICO – thin films with respect to sputtering parameters such as oxygen flow, deposition pressure, applied RF power. Optimized 35-nm-thick ICO layer demonstrated a mobility of 44.22 cm<sup>2</sup>/Vs, a carrier concentration of 1.65 × 10<sup>20</sup>/cm<sup>3</sup>, and a resistivity of 8.56 × 10<sup>−4</sup> Ω cm. Application of such layers into front/back contact silicon heterojunction (FBC-SHJ) solar cells enhanced the short-circuit current density (<em>J</em><sub>SC</sub>) by 0.67 when compared to SHJ cell endowed with tin-doped indium oxide (ITO), respectively. This enhancement yielded an absolute power conversion efficiency (PCE) improvement of 0.55 %, reaching efficiencies of around 23.6 % for devices with ICO layers.</div></div>","PeriodicalId":429,"journal":{"name":"Solar Energy Materials and Solar Cells","volume":"288 ","pages":""},"PeriodicalIF":6.3000,"publicationDate":"2025-04-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimization and integration of room temperature RF sputtered ICO as TCO layers in high-performance SHJ solar cells\",\"authors\":\"Engin Özkol , Maria M.R. Magalhães , Yifeng Zhao , Liqi Cao , Paula Perez-Rodriguez , Katarina Kovačević , Paul Procel , Manuel João Mendes , Miro Zeman , Olindo Isabella\",\"doi\":\"10.1016/j.solmat.2025.113637\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this work, we optimize cerium-doped indium oxide – ICO – thin films with respect to sputtering parameters such as oxygen flow, deposition pressure, applied RF power. Optimized 35-nm-thick ICO layer demonstrated a mobility of 44.22 cm<sup>2</sup>/Vs, a carrier concentration of 1.65 × 10<sup>20</sup>/cm<sup>3</sup>, and a resistivity of 8.56 × 10<sup>−4</sup> Ω cm. Application of such layers into front/back contact silicon heterojunction (FBC-SHJ) solar cells enhanced the short-circuit current density (<em>J</em><sub>SC</sub>) by 0.67 when compared to SHJ cell endowed with tin-doped indium oxide (ITO), respectively. This enhancement yielded an absolute power conversion efficiency (PCE) improvement of 0.55 %, reaching efficiencies of around 23.6 % for devices with ICO layers.</div></div>\",\"PeriodicalId\":429,\"journal\":{\"name\":\"Solar Energy Materials and Solar Cells\",\"volume\":\"288 \",\"pages\":\"\"},\"PeriodicalIF\":6.3000,\"publicationDate\":\"2025-04-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solar Energy Materials and Solar Cells\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0927024825002387\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENERGY & FUELS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solar Energy Materials and Solar Cells","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0927024825002387","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
Optimization and integration of room temperature RF sputtered ICO as TCO layers in high-performance SHJ solar cells
In this work, we optimize cerium-doped indium oxide – ICO – thin films with respect to sputtering parameters such as oxygen flow, deposition pressure, applied RF power. Optimized 35-nm-thick ICO layer demonstrated a mobility of 44.22 cm2/Vs, a carrier concentration of 1.65 × 1020/cm3, and a resistivity of 8.56 × 10−4 Ω cm. Application of such layers into front/back contact silicon heterojunction (FBC-SHJ) solar cells enhanced the short-circuit current density (JSC) by 0.67 when compared to SHJ cell endowed with tin-doped indium oxide (ITO), respectively. This enhancement yielded an absolute power conversion efficiency (PCE) improvement of 0.55 %, reaching efficiencies of around 23.6 % for devices with ICO layers.
期刊介绍:
Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.