掺锡Ga2O3薄膜的双脉冲诱导中程有序：一种增强破纪录电性能的策略

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-04-14 DOI:10.1063/5.0257824

Yao Wang, Long Wang, Yanbo Dong, Qian Feng, Yuhong Liu, Yachao Zhang, Jincheng Zhang, Yue Hao

{"title":"掺锡Ga2O3薄膜的双脉冲诱导中程有序：一种增强破纪录电性能的策略","authors":"Yao Wang, Long Wang, Yanbo Dong, Qian Feng, Yuhong Liu, Yachao Zhang, Jincheng Zhang, Yue Hao","doi":"10.1063/5.0257824","DOIUrl":null,"url":null,"abstract":"This study explores Sn-doped Ga2O3 thin films synthesized via the double-pulse metalorganic chemical vapor deposition (MOCVD) method, highlighting its unique advantages in improving film microstructure and electrical properties. The results show that the double-pulse Sn-doped technique, through intermittent atomic supply, promotes medium-range ordering of Sn atoms within the Ga2O3 lattice, reducing lattice defects and enhancing crystallinity. Secondary ion mass spectrometry further reveals a doping activation rate of 95%. Notably, the films exhibit exceptional electrical performance, achieving a Hall mobility of 175.61 cm2/V·s at a carrier concentration of 2.17 × 1018 cm−3. This value represents a record-high mobility for β-Ga2O3 at this carrier concentration, significantly surpassing the performance of films prepared via conventional continuous deposition methods. This study offers valuable insights into the mechanisms of double-pulse MOCVD and its potential for Ga2O3-based high-performance electronic devices, providing an effective pathway for optimizing next-generation electronic materials.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"20 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Double-pulsed-induced medium-range order in Sn-doped Ga2O3 thin films: A strategy for enhanced record-breaking electrical properties\",\"authors\":\"Yao Wang, Long Wang, Yanbo Dong, Qian Feng, Yuhong Liu, Yachao Zhang, Jincheng Zhang, Yue Hao\",\"doi\":\"10.1063/5.0257824\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This study explores Sn-doped Ga2O3 thin films synthesized via the double-pulse metalorganic chemical vapor deposition (MOCVD) method, highlighting its unique advantages in improving film microstructure and electrical properties. The results show that the double-pulse Sn-doped technique, through intermittent atomic supply, promotes medium-range ordering of Sn atoms within the Ga2O3 lattice, reducing lattice defects and enhancing crystallinity. Secondary ion mass spectrometry further reveals a doping activation rate of 95%. Notably, the films exhibit exceptional electrical performance, achieving a Hall mobility of 175.61 cm2/V·s at a carrier concentration of 2.17 × 1018 cm−3. This value represents a record-high mobility for β-Ga2O3 at this carrier concentration, significantly surpassing the performance of films prepared via conventional continuous deposition methods. This study offers valuable insights into the mechanisms of double-pulse MOCVD and its potential for Ga2O3-based high-performance electronic devices, providing an effective pathway for optimizing next-generation electronic materials.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"20 1\",\"pages\":\"\"},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2025-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0257824\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0257824","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

本研究探索了采用双脉冲金属有机化学气相沉积（MOCVD）方法合成掺锡Ga2O3薄膜，突出了其在改善薄膜微观结构和电性能方面的独特优势。结果表明，双脉冲掺锡技术通过间断的原子供应，促进了Ga2O3晶格内Sn原子的中程有序，减少了晶格缺陷，提高了结晶度。二次离子质谱分析进一步表明掺杂激活率为95%。值得注意的是，薄膜表现出优异的电学性能，在载流子浓度为2.17 × 1018 cm−3时，霍尔迁移率达到175.61 cm2/V·s。这一数值表明，在这种载流子浓度下，β-Ga2O3的迁移率达到了创纪录的高水平，显著超过了通过传统连续沉积方法制备的薄膜的性能。该研究为双脉冲MOCVD的机理及其在基于ga2o3的高性能电子器件中的潜力提供了有价值的见解，为优化下一代电子材料提供了有效途径。

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Double-pulsed-induced medium-range order in Sn-doped Ga2O3 thin films: A strategy for enhanced record-breaking electrical properties

This study explores Sn-doped Ga2O3 thin films synthesized via the double-pulse metalorganic chemical vapor deposition (MOCVD) method, highlighting its unique advantages in improving film microstructure and electrical properties. The results show that the double-pulse Sn-doped technique, through intermittent atomic supply, promotes medium-range ordering of Sn atoms within the Ga2O3 lattice, reducing lattice defects and enhancing crystallinity. Secondary ion mass spectrometry further reveals a doping activation rate of 95%. Notably, the films exhibit exceptional electrical performance, achieving a Hall mobility of 175.61 cm2/V·s at a carrier concentration of 2.17 × 1018 cm−3. This value represents a record-high mobility for β-Ga2O3 at this carrier concentration, significantly surpassing the performance of films prepared via conventional continuous deposition methods. This study offers valuable insights into the mechanisms of double-pulse MOCVD and its potential for Ga2O3-based high-performance electronic devices, providing an effective pathway for optimizing next-generation electronic materials.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.