原子层刻蚀法显著提高了Al0.86Ga0.14N肖特基势垒二极管的击穿电压

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-04-15 DOI:10.1063/5.0251499

Tingang Liu, Zhiyuan Liu, Haicheng Cao, Mingtao Nong, Xiao Tang, Zixian Jiang, Glen Isaac Maciel Garcia, Kexin Ren, Xiaohang Li

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引用次数: 0

摘要

富铝AlGaN肖特基势垒二极管（sdd）的表面缺陷导致高反向泄漏电流，从而限制了击穿电压——电源应用的一个关键参数。在本研究中，原子层蚀刻（ALE）应用于肖特基接触区以去除表面缺陷和天然氧化物。未经ALE处理的sdd的击穿电压为308 V，而经过ALE处理的器件的击穿电压显著提高至1205 V。通过减少界面陷阱和消除天然氧化物，ALE导致更低的泄漏电流和更均匀的肖特基势垒。这些发现表明，ALE是一种有效的表面处理方法，可以提高iii -氮化物肖特基势垒二极管的界面质量，为高性能器件铺平道路，并在其他氮基电力电子产品中取得有希望的进展。

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Significant improvement of breakdown voltage of Al0.86Ga0.14N Schottky barrier diodes by atomic layer etching

Surface defects in Al-rich AlGaN Schottky barrier diodes (SBDs) contribute to high reverse leakage currents, which limit breakdown voltage—a critical parameter for power applications. In this study, atomic layer etching (ALE) was applied to the Schottky contact area to remove surface defects and native oxide. SBDs without ALE treatment exhibited a breakdown voltage of 308 V, whereas ALE-treated devices achieved a significantly improved breakdown voltage of 1205 V. By reducing interface traps and eliminating native oxide, ALE leads to lower leakage current and a more uniform Schottky barrier. These findings demonstrate that ALE is an effective surface treatment for enhancing the interface quality of III-nitride Schottky barrier diodes, paving the way for high-performance devices and promising advances in other nitride-based power electronics.

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来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.