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IF 9.6 1区材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY

Nano Letters Pub Date : 2025-04-15 DOI:10.1021/acs.nanolett.5c00699

Haiming Xu, Qirui Cui, Jijun Yun, Yunchi Zhao, Congli He, Xiaowei Lv, Tengyu Guo, Zengtai Zhu, Lili Luo, Hao Wu, Shouguo Wang, Renchao Che, Yalu Zuo, Guoqiang Yu, Hongxin Yang, Li Xi, Baoshan Cui

{"title":"Full Electrical Manipulation of Perpendicular Magnetization in [111]-Orientated Pt/Co Heterostructure Enabled by Anisotropic Epitaxial Strain","authors":"Haiming Xu, Qirui Cui, Jijun Yun, Yunchi Zhao, Congli He, Xiaowei Lv, Tengyu Guo, Zengtai Zhu, Lili Luo, Hao Wu, Shouguo Wang, Renchao Che, Yalu Zuo, Guoqiang Yu, Hongxin Yang, Li Xi, Baoshan Cui","doi":"10.1021/acs.nanolett.5c00699","DOIUrl":null,"url":null,"abstract":"The effective manipulation of perpendicular magnetization through spin–orbit torque (SOT) holds great promise for magnetic memory and spin-logic device. However, field-free SOT switching of perpendicular magnetization remains a challenge for conventional materials with high symmetry. This study elucidates a full electrical manipulation of the perpendicular magnetization in an epitaxial [111]-orientated Pt/Co heterostructure. A large anisotropic epitaxial strain induces a symmetry transition from the ideal C3v to C1v, attributed to the mismatch between [112] and [110] directions. The anisotropic strain also generates a noteworthy in-plane magnetization component along the [112] direction, further breaking magnetic symmetry. Notably, the high-temperature performance under 393 K highlights the robustness of strain-induced in-plane symmetry breaking. Furthermore, eight Boolean logic operations have been demonstrated within a single SOT device. This research presents a method for harnessing epitaxial strain to break in-plane symmetry, which may open a new avenue in practical SOT devices.","PeriodicalId":53,"journal":{"name":"Nano Letters","volume":"108 1","pages":""},"PeriodicalIF":9.6000,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Letters","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acs.nanolett.5c00699","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

通过自旋轨道力矩（SOT）有效操纵垂直磁化，为磁存储器和自旋逻辑器件带来了巨大前景。然而，对于具有高度对称性的传统材料来说，垂直磁化的无场 SOT 开关仍然是一个挑战。本研究阐明了在外延[111]取向铂/钴异质结构中对垂直磁化的完全电操控。由于[112]和[110]方向之间的不匹配，较大的各向异性外延应变诱导了从理想的 C3v 到 C1v 的对称性转变。各向异性应变还沿着[112]方向产生了值得注意的面内磁化分量，进一步打破了磁对称性。值得注意的是，在 393 K 下的高温性能凸显了应变引起的面内对称性破坏的稳健性。此外，还在单个 SOT 器件中演示了八种布尔逻辑运算。这项研究提出了一种利用外延应变打破面内对称性的方法，为实用 SOT 器件开辟了一条新途径。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Full Electrical Manipulation of Perpendicular Magnetization in [111]-Orientated Pt/Co Heterostructure Enabled by Anisotropic Epitaxial Strain

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Full Electrical Manipulation of Perpendicular Magnetization in [111]-Orientated Pt/Co Heterostructure Enabled by Anisotropic Epitaxial Strain

The effective manipulation of perpendicular magnetization through spin–orbit torque (SOT) holds great promise for magnetic memory and spin-logic device. However, field-free SOT switching of perpendicular magnetization remains a challenge for conventional materials with high symmetry. This study elucidates a full electrical manipulation of the perpendicular magnetization in an epitaxial [111]-orientated Pt/Co heterostructure. A large anisotropic epitaxial strain induces a symmetry transition from the ideal C_3v to C_1v, attributed to the mismatch between [112] and [110] directions. The anisotropic strain also generates a noteworthy in-plane magnetization component along the [112] direction, further breaking magnetic symmetry. Notably, the high-temperature performance under 393 K highlights the robustness of strain-induced in-plane symmetry breaking. Furthermore, eight Boolean logic operations have been demonstrated within a single SOT device. This research presents a method for harnessing epitaxial strain to break in-plane symmetry, which may open a new avenue in practical SOT devices.

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来源期刊

Nano Letters 工程技术-材料科学：综合

CiteScore

16.80

自引率

2.80%

发文量

1182

审稿时长

1.4 months

期刊介绍： Nano Letters serves as a dynamic platform for promptly disseminating original results in fundamental, applied, and emerging research across all facets of nanoscience and nanotechnology. A pivotal criterion for inclusion within Nano Letters is the convergence of at least two different areas or disciplines, ensuring a rich interdisciplinary scope. The journal is dedicated to fostering exploration in diverse areas, including: - Experimental and theoretical findings on physical, chemical, and biological phenomena at the nanoscale - Synthesis, characterization, and processing of organic, inorganic, polymer, and hybrid nanomaterials through physical, chemical, and biological methodologies - Modeling and simulation of synthetic, assembly, and interaction processes - Realization of integrated nanostructures and nano-engineered devices exhibiting advanced performance - Applications of nanoscale materials in living and environmental systems Nano Letters is committed to advancing and showcasing groundbreaking research that intersects various domains, fostering innovation and collaboration in the ever-evolving field of nanoscience and nanotechnology.