{"title":"哈氏合金基底上周期性分层 (Bi, La)FeO3-PbTiO3/Bi(Fe, Mn)O3-PbTiO3 薄膜增强的介电、铁电和漏电流特性","authors":"Yaning Shen, Zhengrong Xue, Xiaoxuan Ma, Tian He, Jinrong Cheng, Shixun Cao","doi":"10.1007/s10971-025-06698-5","DOIUrl":null,"url":null,"abstract":"<div><p>Taking both advantages of Mn or La doped 0.7BiFeO<sub>3</sub>-0.3PbTiO<sub>3</sub> (BF-PT) thin films, a periodic structured 0.7(Bi<sub>0.95</sub>La<sub>0.05</sub>)FeO<sub>3</sub>-0.3PbTiO<sub>3</sub>/0.7Bi(Fe<sub>0.95</sub>Mn<sub>0.05</sub>)O<sub>3</sub>-0.3PbTiO<sub>3</sub> (BLF-PT/BFM-PT) thin films were deposited on Hastelloy substrates alternatively to achieve excellent dielectric and ferroelectric properties with low leakage current density. La<sup>3+</sup>or Mn<sup>2+</sup> doped BF-PT thin films were deposited on the PbTiO<sub>3</sub> (PT) buffered Hastelloy substrates by using the sol-gel method. The comparisons were conducted among undoped BF-PT, BFM-PT, BLF-PT and periodic BLF-PT/BFM-PT thin films in view of the dielectric, ferroelectric and conduction properties. It has been found that La<sup>3+</sup>or Mn<sup>2+</sup> doped BF-PT thin films on Hastelloy maintain good dielectric, ferroelectric and leakage current properties. Particularly, periodic BLF-PT/BFM-PT thin films exhibit the higher dielectric constant (ε<sub>r</sub>) and lower dielectric loss (tanδ) of 266 and 0.058 respectively at frequency of 10<sup>3 </sup>Hz, and the lower leakage current density of 8.66 × 10<sup>−8 </sup>A/cm<sup>2</sup>. The conduction mechanism of BFM-PT and periodic BLF-PT/BFM-PT thin films was of ohmic conduction under fields of below 300 kV/cm, while it was of FN tunneling (Fowler Nordheim tunneling) conduction above 62 kV/cm for undoped BF-PT thin films. Moreover, the interfaces of periodic thin films further prevent the transport of carriers, revealing the bulk limitation conduction mechanism under higher electric fields.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":664,"journal":{"name":"Journal of Sol-Gel Science and Technology","volume":"114 2","pages":"477 - 485"},"PeriodicalIF":2.3000,"publicationDate":"2025-02-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced dielectric, ferroelectric and leakage current properties of periodically layered (Bi, La)FeO3-PbTiO3/Bi(Fe, Mn)O3-PbTiO3 thin films on Hastelloy substrates\",\"authors\":\"Yaning Shen, Zhengrong Xue, Xiaoxuan Ma, Tian He, Jinrong Cheng, Shixun Cao\",\"doi\":\"10.1007/s10971-025-06698-5\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Taking both advantages of Mn or La doped 0.7BiFeO<sub>3</sub>-0.3PbTiO<sub>3</sub> (BF-PT) thin films, a periodic structured 0.7(Bi<sub>0.95</sub>La<sub>0.05</sub>)FeO<sub>3</sub>-0.3PbTiO<sub>3</sub>/0.7Bi(Fe<sub>0.95</sub>Mn<sub>0.05</sub>)O<sub>3</sub>-0.3PbTiO<sub>3</sub> (BLF-PT/BFM-PT) thin films were deposited on Hastelloy substrates alternatively to achieve excellent dielectric and ferroelectric properties with low leakage current density. La<sup>3+</sup>or Mn<sup>2+</sup> doped BF-PT thin films were deposited on the PbTiO<sub>3</sub> (PT) buffered Hastelloy substrates by using the sol-gel method. The comparisons were conducted among undoped BF-PT, BFM-PT, BLF-PT and periodic BLF-PT/BFM-PT thin films in view of the dielectric, ferroelectric and conduction properties. It has been found that La<sup>3+</sup>or Mn<sup>2+</sup> doped BF-PT thin films on Hastelloy maintain good dielectric, ferroelectric and leakage current properties. Particularly, periodic BLF-PT/BFM-PT thin films exhibit the higher dielectric constant (ε<sub>r</sub>) and lower dielectric loss (tanδ) of 266 and 0.058 respectively at frequency of 10<sup>3 </sup>Hz, and the lower leakage current density of 8.66 × 10<sup>−8 </sup>A/cm<sup>2</sup>. The conduction mechanism of BFM-PT and periodic BLF-PT/BFM-PT thin films was of ohmic conduction under fields of below 300 kV/cm, while it was of FN tunneling (Fowler Nordheim tunneling) conduction above 62 kV/cm for undoped BF-PT thin films. Moreover, the interfaces of periodic thin films further prevent the transport of carriers, revealing the bulk limitation conduction mechanism under higher electric fields.</p><h3>Graphical Abstract</h3><div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":664,\"journal\":{\"name\":\"Journal of Sol-Gel Science and Technology\",\"volume\":\"114 2\",\"pages\":\"477 - 485\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2025-02-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Sol-Gel Science and Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10971-025-06698-5\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, CERAMICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Sol-Gel Science and Technology","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s10971-025-06698-5","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, CERAMICS","Score":null,"Total":0}
Enhanced dielectric, ferroelectric and leakage current properties of periodically layered (Bi, La)FeO3-PbTiO3/Bi(Fe, Mn)O3-PbTiO3 thin films on Hastelloy substrates
Taking both advantages of Mn or La doped 0.7BiFeO3-0.3PbTiO3 (BF-PT) thin films, a periodic structured 0.7(Bi0.95La0.05)FeO3-0.3PbTiO3/0.7Bi(Fe0.95Mn0.05)O3-0.3PbTiO3 (BLF-PT/BFM-PT) thin films were deposited on Hastelloy substrates alternatively to achieve excellent dielectric and ferroelectric properties with low leakage current density. La3+or Mn2+ doped BF-PT thin films were deposited on the PbTiO3 (PT) buffered Hastelloy substrates by using the sol-gel method. The comparisons were conducted among undoped BF-PT, BFM-PT, BLF-PT and periodic BLF-PT/BFM-PT thin films in view of the dielectric, ferroelectric and conduction properties. It has been found that La3+or Mn2+ doped BF-PT thin films on Hastelloy maintain good dielectric, ferroelectric and leakage current properties. Particularly, periodic BLF-PT/BFM-PT thin films exhibit the higher dielectric constant (εr) and lower dielectric loss (tanδ) of 266 and 0.058 respectively at frequency of 103 Hz, and the lower leakage current density of 8.66 × 10−8 A/cm2. The conduction mechanism of BFM-PT and periodic BLF-PT/BFM-PT thin films was of ohmic conduction under fields of below 300 kV/cm, while it was of FN tunneling (Fowler Nordheim tunneling) conduction above 62 kV/cm for undoped BF-PT thin films. Moreover, the interfaces of periodic thin films further prevent the transport of carriers, revealing the bulk limitation conduction mechanism under higher electric fields.
期刊介绍：
The primary objective of the Journal of Sol-Gel Science and Technology (JSST), the official journal of the International Sol-Gel Society, is to provide an international forum for the dissemination of scientific, technological, and general knowledge about materials processed by chemical nanotechnologies known as the "sol-gel" process. The materials of interest include gels, gel-derived glasses, ceramics in form of nano- and micro-powders, bulk, fibres, thin films and coatings as well as more recent materials such as hybrid organic-inorganic materials and composites. Such materials exhibit a wide range of optical, electronic, magnetic, chemical, environmental, and biomedical properties and functionalities. Methods for producing sol-gel-derived materials and the industrial uses of these materials are also of great interest.
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