{"title":"中红外激光器的GaSbBi量子阱","authors":"Youxiang Cao, Liyao Zhang","doi":"10.1134/S1063783425600050","DOIUrl":null,"url":null,"abstract":"<p>Mid-infrared lasers are widely used in civilian and military applications. Interband cascade lasers and quantum cascade lasers are the most popular mid-infrared semiconductor lasers, which is difficult for growth, with low efficiency. GaSbBi is formed by introducing a small number of Bi atoms into GaSb, which reduces the matrix bandgap of about 39 meV/Bi%. GaSbBi quantum well (QW) lasers have already been fabricated, lasing at 2.7 μm. GaSb<sub>1–<i>x</i></sub>Bi<sub><i>x</i></sub>/Al<sub><i>y</i></sub>Ga<sub>1–<i>y</i></sub>As<sub>0.08<i>y</i></sub>Sb<sub>1–0.08<i>y</i></sub> QWs on GaSb substrate is proposed to fabricated mid-infrared lasers. The band structures of GaSbBi/AlGaAsSb QWs with different Bi contents, Al contents and well thicknesses are calculated. Light emission from 1.4 to 6.2 μm can be achieved from GaSbBi QWs with well thicknesses of 5–20 nm, Bi contents of 0.01–0.15 and Al contents of 0–1.0. A 5 µm laser was designed with a 15 nm GaSbBi<sub>0.141</sub>/Al<sub>0.5</sub>Ga<sub>0.5</sub>As<sub>0.04</sub>Sb<sub>0.96</sub> QW acting as the active region and the device performance was further calculated. The optical confinement factor is about 5.45% and the threshold current density is 393 A/cm<sup>2</sup>.</p>","PeriodicalId":731,"journal":{"name":"Physics of the Solid State","volume":"67 4","pages":"253 - 258"},"PeriodicalIF":0.9000,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaSbBi Quantum Wells for Mid-Infrared Lasers\",\"authors\":\"Youxiang Cao, Liyao Zhang\",\"doi\":\"10.1134/S1063783425600050\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Mid-infrared lasers are widely used in civilian and military applications. Interband cascade lasers and quantum cascade lasers are the most popular mid-infrared semiconductor lasers, which is difficult for growth, with low efficiency. GaSbBi is formed by introducing a small number of Bi atoms into GaSb, which reduces the matrix bandgap of about 39 meV/Bi%. GaSbBi quantum well (QW) lasers have already been fabricated, lasing at 2.7 μm. GaSb<sub>1–<i>x</i></sub>Bi<sub><i>x</i></sub>/Al<sub><i>y</i></sub>Ga<sub>1–<i>y</i></sub>As<sub>0.08<i>y</i></sub>Sb<sub>1–0.08<i>y</i></sub> QWs on GaSb substrate is proposed to fabricated mid-infrared lasers. The band structures of GaSbBi/AlGaAsSb QWs with different Bi contents, Al contents and well thicknesses are calculated. Light emission from 1.4 to 6.2 μm can be achieved from GaSbBi QWs with well thicknesses of 5–20 nm, Bi contents of 0.01–0.15 and Al contents of 0–1.0. A 5 µm laser was designed with a 15 nm GaSbBi<sub>0.141</sub>/Al<sub>0.5</sub>Ga<sub>0.5</sub>As<sub>0.04</sub>Sb<sub>0.96</sub> QW acting as the active region and the device performance was further calculated. The optical confinement factor is about 5.45% and the threshold current density is 393 A/cm<sup>2</sup>.</p>\",\"PeriodicalId\":731,\"journal\":{\"name\":\"Physics of the Solid State\",\"volume\":\"67 4\",\"pages\":\"253 - 258\"},\"PeriodicalIF\":0.9000,\"publicationDate\":\"2025-04-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physics of the Solid State\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S1063783425600050\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physics of the Solid State","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S1063783425600050","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
Mid-infrared lasers are widely used in civilian and military applications. Interband cascade lasers and quantum cascade lasers are the most popular mid-infrared semiconductor lasers, which is difficult for growth, with low efficiency. GaSbBi is formed by introducing a small number of Bi atoms into GaSb, which reduces the matrix bandgap of about 39 meV/Bi%. GaSbBi quantum well (QW) lasers have already been fabricated, lasing at 2.7 μm. GaSb1–xBix/AlyGa1–yAs0.08ySb1–0.08y QWs on GaSb substrate is proposed to fabricated mid-infrared lasers. The band structures of GaSbBi/AlGaAsSb QWs with different Bi contents, Al contents and well thicknesses are calculated. Light emission from 1.4 to 6.2 μm can be achieved from GaSbBi QWs with well thicknesses of 5–20 nm, Bi contents of 0.01–0.15 and Al contents of 0–1.0. A 5 µm laser was designed with a 15 nm GaSbBi0.141/Al0.5Ga0.5As0.04Sb0.96 QW acting as the active region and the device performance was further calculated. The optical confinement factor is about 5.45% and the threshold current density is 393 A/cm2.
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Presents the latest results from Russia’s leading researchers in condensed matter physics at the Russian Academy of Sciences and other prestigious institutions. Covers all areas of solid state physics including solid state optics, solid state acoustics, electronic and vibrational spectra, phase transitions, ferroelectricity, magnetism, and superconductivity. Also presents review papers on the most important problems in solid state physics.
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