SAW应变传感器的应变传递特性及其对传感器性能的影响

IF 4.9 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Sensors and Actuators A-physical Pub Date : 2025-04-11 DOI:10.1016/j.sna.2025.116575

Chunlong Cheng , Yanxin Liu , Xiaoru Li , Jingwen Yang , Tong Tong , Qingqing Ke

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引用次数: 0

摘要

本文基于128°y型切割铌酸锂，对不同尺寸的表面声波（SAW）应变传感器进行了数值模拟和实验测试。该传感器基于单口谐振腔结构。随着应变传感器的大小从4.6 毫米× 11 毫米16.6 毫米×  11毫米,压力传输速率(σ)增加了19.46 %,和电极区域的应变梯度下降了13.7 %,后来导致灵敏度54.5 增加%。结果表明，传感器的σ值越高，灵敏度越高；应变分布越均匀，线性度越高，最大迟滞误差和最大应变偏差越小。我们的研究结果阐明了SAW应变传感器的应变传递特性与其尺寸和传感性能之间的关系，这对高性能传感器的开发至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The strain transfer characteristics of SAW strain sensors and their impact on the sensor performance

In this paper, we conducted numerical simulations and experimental tests on surface acoustic wave (SAW) strain sensors with various dimensions, based on 128° Y-cut lithium niobate. The sensors are based on the single-port resonator structure. With increasing the size of the strain sensor from 4.6 mm × 11 mm to 16.6 mm × 11 mm, the strain transfer rate (σ) is increased by 19.46 %, and the strain gradient in the electrode region is decreased by 13.7 %, which subsequently results in an increased sensitivity by 54.5 %. It reveals that the higher σ of the sensor is likely to lead to an enhanced sensitivity, while a uniform strain distribution results in higher linearity, and smaller maximum hysteresis error and maximum strain deviation. Our findings elucidate the relationship between the strain transfer characteristics of SAW strain sensors and their dimensions as well as sensing properties, which is crucial for the development of high-performance sensors.

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来源期刊

Sensors and Actuators A-physical 工程技术-工程：电子与电气

CiteScore

8.10

自引率

6.50%

发文量

630

审稿时长

49 days

期刊介绍： Sensors and Actuators A: Physical brings together multidisciplinary interests in one journal entirely devoted to disseminating information on all aspects of research and development of solid-state devices for transducing physical signals. Sensors and Actuators A: Physical regularly publishes original papers, letters to the Editors and from time to time invited review articles within the following device areas: • Fundamentals and Physics, such as: classification of effects, physical effects, measurement theory, modelling of sensors, measurement standards, measurement errors, units and constants, time and frequency measurement. Modeling papers should bring new modeling techniques to the field and be supported by experimental results. • Materials and their Processing, such as: piezoelectric materials, polymers, metal oxides, III-V and II-VI semiconductors, thick and thin films, optical glass fibres, amorphous, polycrystalline and monocrystalline silicon. • Optoelectronic sensors, such as: photovoltaic diodes, photoconductors, photodiodes, phototransistors, positron-sensitive photodetectors, optoisolators, photodiode arrays, charge-coupled devices, light-emitting diodes, injection lasers and liquid-crystal displays. • Mechanical sensors, such as: metallic, thin-film and semiconductor strain gauges, diffused silicon pressure sensors, silicon accelerometers, solid-state displacement transducers, piezo junction devices, piezoelectric field-effect transducers (PiFETs), tunnel-diode strain sensors, surface acoustic wave devices, silicon micromechanical switches, solid-state flow meters and electronic flow controllers. Etc...