利用数字图像相关技术实现硅负极全固态电池局部应变分布的可视化

IF 3.5 4区 化学 Q2 ELECTROCHEMISTRY
Dr. Misae Otoyama, Dr. Nao Terasaki, Dr. Tomonari Takeuchi, Dr. Toyoki Okumura, Dr. Kentaro Kuratani
{"title":"利用数字图像相关技术实现硅负极全固态电池局部应变分布的可视化","authors":"Dr. Misae Otoyama,&nbsp;Dr. Nao Terasaki,&nbsp;Dr. Tomonari Takeuchi,&nbsp;Dr. Toyoki Okumura,&nbsp;Dr. Kentaro Kuratani","doi":"10.1002/celc.202400616","DOIUrl":null,"url":null,"abstract":"<p>Investigating local strain distributions is essential for developing long-life all-solid-state batteries (ASSBs) because capacity fading primarily results from cracks and contact loss caused by volume changes in electrode active materials during battery operation. Digital image correlation (DIC) analysis can be used to create strain distribution maps from continuous images of materials under applied pressure. In this study, DIC analysis of operando confocal microscopy images of an ASSB cross-section was conducted to elucidate the mechanical degradation mechanism in ASSBs with Si electrodes exhibiting ~300 % volume change. The Si electrode layer exhibited irreversible strain changes, whereas the solid electrolyte (SE) layer exhibited no significant strain changes. Furthermore, DIC analysis was performed using in situ SEM images focused on the Si electrode layer to investigate detailed strain distribution maps for individual Si particles. Higher strain changes were observed in the vertical direction within the SE layer, which led to cracks forming in relatively large Si particles at the beginning of the lithiation process. Visualizing local strain distribution in the electrode layer through DIC analysis of operando/in situ images is a powerful approach for understanding how and where cracks form.</p>","PeriodicalId":142,"journal":{"name":"ChemElectroChem","volume":"12 8","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-02-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/celc.202400616","citationCount":"0","resultStr":"{\"title\":\"Visualization of Local Strain Distributions in All-Solid-State Batteries with Silicon Negative Electrodes Using Digital Image Correlation for Operando/In situ Microscopy Images\",\"authors\":\"Dr. Misae Otoyama,&nbsp;Dr. Nao Terasaki,&nbsp;Dr. Tomonari Takeuchi,&nbsp;Dr. Toyoki Okumura,&nbsp;Dr. Kentaro Kuratani\",\"doi\":\"10.1002/celc.202400616\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Investigating local strain distributions is essential for developing long-life all-solid-state batteries (ASSBs) because capacity fading primarily results from cracks and contact loss caused by volume changes in electrode active materials during battery operation. Digital image correlation (DIC) analysis can be used to create strain distribution maps from continuous images of materials under applied pressure. In this study, DIC analysis of operando confocal microscopy images of an ASSB cross-section was conducted to elucidate the mechanical degradation mechanism in ASSBs with Si electrodes exhibiting ~300 % volume change. The Si electrode layer exhibited irreversible strain changes, whereas the solid electrolyte (SE) layer exhibited no significant strain changes. Furthermore, DIC analysis was performed using in situ SEM images focused on the Si electrode layer to investigate detailed strain distribution maps for individual Si particles. Higher strain changes were observed in the vertical direction within the SE layer, which led to cracks forming in relatively large Si particles at the beginning of the lithiation process. Visualizing local strain distribution in the electrode layer through DIC analysis of operando/in situ images is a powerful approach for understanding how and where cracks form.</p>\",\"PeriodicalId\":142,\"journal\":{\"name\":\"ChemElectroChem\",\"volume\":\"12 8\",\"pages\":\"\"},\"PeriodicalIF\":3.5000,\"publicationDate\":\"2025-02-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/celc.202400616\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ChemElectroChem\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/celc.202400616\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ELECTROCHEMISTRY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ChemElectroChem","FirstCategoryId":"92","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/celc.202400616","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ELECTROCHEMISTRY","Score":null,"Total":0}
引用次数: 0

摘要

研究局部应变分布对于开发长寿命全固态电池(assb)至关重要,因为容量衰减主要是由电池运行过程中电极活性材料体积变化引起的裂纹和接触损失引起的。数字图像相关(DIC)分析可用于从材料在施加压力下的连续图像中创建应变分布图。在本研究中,对ASSB的共聚焦显微镜图像进行了DIC分析,以阐明具有~ 300%体积变化的Si电极的ASSB的机械降解机制。Si电极层表现出不可逆的应变变化,而固体电解质(SE)层表现出不明显的应变变化。此外,DIC分析使用聚焦于Si电极层的原位SEM图像来研究单个Si颗粒的详细应变分布图。SE层内垂直方向的应变变化较大,导致较大的Si颗粒在锂化初期形成裂纹。通过对operando/in situ图像的DIC分析来可视化电极层中的局部应变分布是了解裂纹形成方式和位置的有力方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Visualization of Local Strain Distributions in All-Solid-State Batteries with Silicon Negative Electrodes Using Digital Image Correlation for Operando/In situ Microscopy Images

Visualization of Local Strain Distributions in All-Solid-State Batteries with Silicon Negative Electrodes Using Digital Image Correlation for Operando/In situ Microscopy Images

Investigating local strain distributions is essential for developing long-life all-solid-state batteries (ASSBs) because capacity fading primarily results from cracks and contact loss caused by volume changes in electrode active materials during battery operation. Digital image correlation (DIC) analysis can be used to create strain distribution maps from continuous images of materials under applied pressure. In this study, DIC analysis of operando confocal microscopy images of an ASSB cross-section was conducted to elucidate the mechanical degradation mechanism in ASSBs with Si electrodes exhibiting ~300 % volume change. The Si electrode layer exhibited irreversible strain changes, whereas the solid electrolyte (SE) layer exhibited no significant strain changes. Furthermore, DIC analysis was performed using in situ SEM images focused on the Si electrode layer to investigate detailed strain distribution maps for individual Si particles. Higher strain changes were observed in the vertical direction within the SE layer, which led to cracks forming in relatively large Si particles at the beginning of the lithiation process. Visualizing local strain distribution in the electrode layer through DIC analysis of operando/in situ images is a powerful approach for understanding how and where cracks form.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
ChemElectroChem
ChemElectroChem ELECTROCHEMISTRY-
CiteScore
7.90
自引率
2.50%
发文量
515
审稿时长
1.2 months
期刊介绍: ChemElectroChem is aimed to become a top-ranking electrochemistry journal for primary research papers and critical secondary information from authors across the world. The journal covers the entire scope of pure and applied electrochemistry, the latter encompassing (among others) energy applications, electrochemistry at interfaces (including surfaces), photoelectrochemistry and bioelectrochemistry.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信