制备掺铒WO3薄膜,作为室温下氨检测的潜在候选材料

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
R. Balaji, Pandurangan Mohan, B. Prakash, V. Ganesh
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引用次数: 0

摘要

在这项工作中,我们报道了通过雾化器喷雾热解技术制备的纯和掺铒(1、2、3、4和5 wt.%) WO3薄膜。研究了薄膜的微晶结构、表面形貌、光学性能和气敏特性。XRD分析表明,制备的WO3:Er2%薄膜具有六方晶体结构,晶粒尺寸从48 nm增加到63 nm。FESEM分析显示,WO3:Er2%薄膜呈纳米纤维网状形态,孔隙率增加,纳米纤维尺寸减小。光致发光(PL)光谱显示,原始和WO3:Er薄膜在360、400、420、445、475和520 nm处有6个发射峰,其中2% Er掺杂样品的PL发射峰最大。光学测量表明,WO3:Er2%薄膜的透射光谱从纯WO3:Er2%下降,光带隙从3.2 eV下降到2.9 eV。WO3:Er2%薄膜的关键气敏参数(气体响应率、响应时间和恢复时间)分别为368 s、5.2 s和6.7 s,证实了其良好的气敏性能。本研究表明,WO3:Er2%薄膜是一种高效、快速响应的气体传感器,采用简单、经济的雾化器喷雾热解方法开发。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication of Er-doped WO3 thin films as a potential candidate for the detection of ammonia at room temperature

In this work, we report on pure and Er-doped (1, 2, 3, 4, and 5 wt.%) WO3 thin films prepared via the nebulizer spray pyrolysis technique. The microcrystalline structure, surface morphology, optical properties, and gas-sensing characteristics of the films were studied. XRD analysis revealed that the prepared samples exhibited hexagonal crystal structures, with an increase in grain size from 48 to 63 nm for the WO3:Er2% thin film. FESEM analysis showed a nanofibrous network morphology, with increased porosity and reduced nanofiber size observed in the WO3:Er2% film. Photoluminescence (PL) spectra demonstrated six emission peaks at 360, 400, 420, 445, 475, and 520 nm for both the pristine and WO3:Er films, with maximum PL emission noted for the 2% Er doped sample. Optical measurements indicated a decrease in transmission spectra from pure to WO3:Er2%, with the optical bandgap decreasing from 3.2 eV to 2.9 eV for the WO3:Er2% film. Key gas-sensing parameters, including gas responsivity, response and recovery time, were measured as 368, 5.2 s, and 6.7 s, respectively, for the WO3:Er2% thin film, confirming its strong gas-sensing capabilities. This study demonstrates that WO3:Er2% thin film is an efficient, fast-responding gas sensor, developed using the simple and cost-effective nebulizer spray pyrolysis method.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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