Advanced interfacial engineering with Poly-TPD for CsPbBr3-based perovskite light emitting diodes

Perovskite based light-emitting diodes are showing significant potential for next-generation displays and lighting applications as a result of easy solvent-based manufacture, high photoluminescence quantum efficiency, and tunable electronic bandgaps. Despite these advantages, morphological defects, unbalanced charge transport, and stability challenges hinder its broad applications in light-emitting devices. Herein, we introduce a simple and affordable approach to address these challenges; we fabricated the device having structure ITO/PEDOT:PSS/poly-TPD/CsPbBr₃-Poly-TPD/BCP/TPBi/LiF/Al by spin coating and thermal deposition technique. To improve the morphology of the CsPbBr₃ active layer, encapsulate QDs using poly-TPD for fabrication of LEDs. The interfacial chemistry of nanocrystals was tuned to obtain moderately enhanced luminescence and efficient charge transport in the perovskite layer by adjusting the concentration of the hole transport layer beneath the active layer, which is CsPbBr₃ QDs mixed with the poly-TPD matrix. Full-width half maxima within 20 ± 0.5 nm after mixing with poly-TPD in the emissive layer, indicating a high degree of color purity; this type of material is well-suited for an expanded color gamut in display applications. We demonstrated a device with better surface morphology, shown by atomic force microscopy with the optimized hole transport layer concentration. The study could open the door for perovskite polymer union for better optoelectronic devices such as large-scale production of LEDs, flexible display, and stability in the air.