Abderrahmane Elmelouky , Soumia Zaim , Bornes C. Mosonik , Joshua K. Kibet , Reddad ElMoznine
{"title":"深入研究CIGS(铜、铟、镓、硒)层性质与硅层对提高太阳能电池性能的影响","authors":"Abderrahmane Elmelouky , Soumia Zaim , Bornes C. Mosonik , Joshua K. Kibet , Reddad ElMoznine","doi":"10.1016/j.mseb.2025.118307","DOIUrl":null,"url":null,"abstract":"<div><div>Several studies using SCAPS-1D have been conducted to investigate the performance of solar cell devices, primarily focusing on J-V analysis for DC characterization. However, alternating current (AC) analysis using complex impedance functions (Z*) and modulus (M*) has revealed critical processes, such as ionic transport, recombination, and diffusion, which are essential for optimizing perovskite solar cell architectures. This approach allows for the determination of parameters like the time constant (τ<sub>i</sub>) associated with each process. Here, we observe that ionic conductivity and electronic diffusion play key roles in balancing charge collection and recombination losses. The optimized structure demonstrates power conversion efficiency (PCE) of 16.39 % for the traditional CIGS based cell whereas the PCE for the CIGS-Si based cell was found to be 23.02 %. The influence of the Si layer thickness on both the low and high-frequency processes was emphasized, highlighting its importance in improving solar cell efficiency.</div></div>","PeriodicalId":18233,"journal":{"name":"Materials Science and Engineering: B","volume":"318 ","pages":"Article 118307"},"PeriodicalIF":4.6000,"publicationDate":"2025-04-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"In-depth study of CIGS (Copper, Indium, Gallium, and Selenium) layer properties with the impact of silicon layer for enhancement of solar cell performance\",\"authors\":\"Abderrahmane Elmelouky , Soumia Zaim , Bornes C. Mosonik , Joshua K. Kibet , Reddad ElMoznine\",\"doi\":\"10.1016/j.mseb.2025.118307\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Several studies using SCAPS-1D have been conducted to investigate the performance of solar cell devices, primarily focusing on J-V analysis for DC characterization. However, alternating current (AC) analysis using complex impedance functions (Z*) and modulus (M*) has revealed critical processes, such as ionic transport, recombination, and diffusion, which are essential for optimizing perovskite solar cell architectures. This approach allows for the determination of parameters like the time constant (τ<sub>i</sub>) associated with each process. Here, we observe that ionic conductivity and electronic diffusion play key roles in balancing charge collection and recombination losses. The optimized structure demonstrates power conversion efficiency (PCE) of 16.39 % for the traditional CIGS based cell whereas the PCE for the CIGS-Si based cell was found to be 23.02 %. The influence of the Si layer thickness on both the low and high-frequency processes was emphasized, highlighting its importance in improving solar cell efficiency.</div></div>\",\"PeriodicalId\":18233,\"journal\":{\"name\":\"Materials Science and Engineering: B\",\"volume\":\"318 \",\"pages\":\"Article 118307\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-04-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science and Engineering: B\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0921510725003307\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science and Engineering: B","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0921510725003307","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
In-depth study of CIGS (Copper, Indium, Gallium, and Selenium) layer properties with the impact of silicon layer for enhancement of solar cell performance
Several studies using SCAPS-1D have been conducted to investigate the performance of solar cell devices, primarily focusing on J-V analysis for DC characterization. However, alternating current (AC) analysis using complex impedance functions (Z*) and modulus (M*) has revealed critical processes, such as ionic transport, recombination, and diffusion, which are essential for optimizing perovskite solar cell architectures. This approach allows for the determination of parameters like the time constant (τi) associated with each process. Here, we observe that ionic conductivity and electronic diffusion play key roles in balancing charge collection and recombination losses. The optimized structure demonstrates power conversion efficiency (PCE) of 16.39 % for the traditional CIGS based cell whereas the PCE for the CIGS-Si based cell was found to be 23.02 %. The influence of the Si layer thickness on both the low and high-frequency processes was emphasized, highlighting its importance in improving solar cell efficiency.
期刊介绍:
The journal provides an international medium for the publication of theoretical and experimental studies and reviews related to the electronic, electrochemical, ionic, magnetic, optical, and biosensing properties of solid state materials in bulk, thin film and particulate forms. Papers dealing with synthesis, processing, characterization, structure, physical properties and computational aspects of nano-crystalline, crystalline, amorphous and glassy forms of ceramics, semiconductors, layered insertion compounds, low-dimensional compounds and systems, fast-ion conductors, polymers and dielectrics are viewed as suitable for publication. Articles focused on nano-structured aspects of these advanced solid-state materials will also be considered suitable.