具有栅极下盖层GaON的高性能GaN hemt

IF 3.6 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-04-11 DOI:10.1063/5.0260480

J. He, Z. Cheng, S. Xie, C. Mi, X. Wu, L. Zhang, Y. Zhang

{"title":"具有栅极下盖层GaON的高性能GaN hemt","authors":"J. He, Z. Cheng, S. Xie, C. Mi, X. Wu, L. Zhang, Y. Zhang","doi":"10.1063/5.0260480","DOIUrl":null,"url":null,"abstract":"Schottky-gated terahertz high-electron mobility transistors with ultrathin barriers suffer from metal-induced gap states (MIGSs), leading to gate leakage and electron scattering that degrade transport properties. While oxygen plasma oxidation of the InAlN barrier can mitigate MIGS, it introduces defects and impurity scattering, further deteriorating channel performance. This study resolves this paradox by exploiting the thermodynamic oxidation selectivity between gallium nitride (GaN) and InAlN to selectively convert a GaN cap under the gate region into a wide-bandgap gallium oxynitride (GaON) layer, leaving the InAlN barrier intact. This barrier-friendly approach suppresses MIGS without sacrificing channel quality, achieving a near-theoretical intrinsic electron effective velocity (veff. i = 2.2 × 107 cm/s). The enhanced transport enables record RF performance: (fT/fmax = 240/530) GHz, a noise figure below 1 dB at Ka-band, attributed to suppressed interfacial scattering, and 8 dB linear gain at 94 GHz. With excellent uniformity, this GaON cap technology provides a scalable, reliable pathway to high-frequency GaN HEMTs that harmonize noise and power performance.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"108 1","pages":""},"PeriodicalIF":3.6000,"publicationDate":"2025-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation\",\"authors\":\"J. He, Z. Cheng, S. Xie, C. Mi, X. Wu, L. Zhang, Y. Zhang\",\"doi\":\"10.1063/5.0260480\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Schottky-gated terahertz high-electron mobility transistors with ultrathin barriers suffer from metal-induced gap states (MIGSs), leading to gate leakage and electron scattering that degrade transport properties. While oxygen plasma oxidation of the InAlN barrier can mitigate MIGS, it introduces defects and impurity scattering, further deteriorating channel performance. This study resolves this paradox by exploiting the thermodynamic oxidation selectivity between gallium nitride (GaN) and InAlN to selectively convert a GaN cap under the gate region into a wide-bandgap gallium oxynitride (GaON) layer, leaving the InAlN barrier intact. This barrier-friendly approach suppresses MIGS without sacrificing channel quality, achieving a near-theoretical intrinsic electron effective velocity (veff. i = 2.2 × 107 cm/s). The enhanced transport enables record RF performance: (fT/fmax = 240/530) GHz, a noise figure below 1 dB at Ka-band, attributed to suppressed interfacial scattering, and 8 dB linear gain at 94 GHz. With excellent uniformity, this GaON cap technology provides a scalable, reliable pathway to high-frequency GaN HEMTs that harmonize noise and power performance.\",\"PeriodicalId\":8094,\"journal\":{\"name\":\"Applied Physics Letters\",\"volume\":\"108 1\",\"pages\":\"\"},\"PeriodicalIF\":3.6000,\"publicationDate\":\"2025-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Applied Physics Letters\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1063/5.0260480\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"PHYSICS, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0260480","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

具有超薄势垒的肖特基门控太赫兹高电子迁移率晶体管遭受金属诱导的间隙态（MIGSs），导致栅极泄漏和电子散射，从而降低传输性能。虽然氧等离子体氧化的InAlN势垒可以减轻MIGS，但它会引入缺陷和杂质散射，进一步恶化通道性能。本研究通过利用氮化镓（GaN）和氮化镓（InAlN）之间的热力学氧化选择性来解决这一悖论，将栅极区域下的氮化镓（GaN）帽选择性地转化为宽带隙的氮化镓（GaON）层，使氮化镓势垒保持完整。这种对障碍友好的方法在不牺牲通道质量的情况下抑制了MIGS，实现了接近理论的内在电子有效速度（veff）。I = 2.2 × 107 cm/s)。增强的传输实现了创纪录的射频性能：（fT/fmax = 240/530） GHz， ka频段噪声系数低于1 dB，归因于抑制的界面散射，以及94 GHz时的8 dB线性增益。由于具有出色的均匀性，这种GaON帽技术为高频GaN hemt提供了可扩展，可靠的途径，可以协调噪声和功率性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation

Schottky-gated terahertz high-electron mobility transistors with ultrathin barriers suffer from metal-induced gap states (MIGSs), leading to gate leakage and electron scattering that degrade transport properties. While oxygen plasma oxidation of the InAlN barrier can mitigate MIGS, it introduces defects and impurity scattering, further deteriorating channel performance. This study resolves this paradox by exploiting the thermodynamic oxidation selectivity between gallium nitride (GaN) and InAlN to selectively convert a GaN cap under the gate region into a wide-bandgap gallium oxynitride (GaON) layer, leaving the InAlN barrier intact. This barrier-friendly approach suppresses MIGS without sacrificing channel quality, achieving a near-theoretical intrinsic electron effective velocity (veff. i = 2.2 × 107 cm/s). The enhanced transport enables record RF performance: (fT/fmax = 240/530) GHz, a noise figure below 1 dB at Ka-band, attributed to suppressed interfacial scattering, and 8 dB linear gain at 94 GHz. With excellent uniformity, this GaON cap technology provides a scalable, reliable pathway to high-frequency GaN HEMTs that harmonize noise and power performance.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.