连续进料法生长单晶硅过程中熔体氧输运的途径及控制

IF 2 4区材料科学 Q3 CRYSTALLOGRAPHY

Journal of Crystal Growth Pub Date : 2025-04-06 DOI:10.1016/j.jcrysgro.2025.128183

Jiancheng Li , Junlei Wang , Zeqi Zhong , Zaoyang Li , Yong Wen , Lei Wang , Lijun Liu

{"title":"连续进料法生长单晶硅过程中熔体氧输运的途径及控制","authors":"Jiancheng Li , Junlei Wang , Zeqi Zhong , Zaoyang Li , Yong Wen , Lei Wang , Lijun Liu","doi":"10.1016/j.jcrysgro.2025.128183","DOIUrl":null,"url":null,"abstract":"<div><div>The continuous-feeding Czochralski (CCz) method is regarded as the most advanced technology for the growth of large-sized single crystal silicon with a uniform axial distribution of impurities. However, the use of double quartz crucibles in this method results in a high concentration of oxygen impurities in the crystal, which has become a technical bottleneck for the widespread adoption of this technology. In this paper, a series of numerical simulations were carried out firstly. It was found that the oxygen transported to the melt-crystal (m-c) interface mainly comes from the dissolution at the crucible wall of growth zone (inside the inner crucible). Furthermore, the diffusion path of oxygen in the melt was creatively elucidated, which has enabled the oxygen transport pathway to be identified. Based on this, the oxygen content of single crystal silicon was reduced by enhancing the forced convection induced by crucible rotation, and the result was verified experimentally.</div></div>","PeriodicalId":353,"journal":{"name":"Journal of Crystal Growth","volume":"662 ","pages":"Article 128183"},"PeriodicalIF":2.0000,"publicationDate":"2025-04-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Pathway and control of oxygen transport in the melt during single crystal silicon growth by continuous-feeding Czochralski method\",\"authors\":\"Jiancheng Li , Junlei Wang , Zeqi Zhong , Zaoyang Li , Yong Wen , Lei Wang , Lijun Liu\",\"doi\":\"10.1016/j.jcrysgro.2025.128183\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The continuous-feeding Czochralski (CCz) method is regarded as the most advanced technology for the growth of large-sized single crystal silicon with a uniform axial distribution of impurities. However, the use of double quartz crucibles in this method results in a high concentration of oxygen impurities in the crystal, which has become a technical bottleneck for the widespread adoption of this technology. In this paper, a series of numerical simulations were carried out firstly. It was found that the oxygen transported to the melt-crystal (m-c) interface mainly comes from the dissolution at the crucible wall of growth zone (inside the inner crucible). Furthermore, the diffusion path of oxygen in the melt was creatively elucidated, which has enabled the oxygen transport pathway to be identified. Based on this, the oxygen content of single crystal silicon was reduced by enhancing the forced convection induced by crucible rotation, and the result was verified experimentally.</div></div>\",\"PeriodicalId\":353,\"journal\":{\"name\":\"Journal of Crystal Growth\",\"volume\":\"662 \",\"pages\":\"Article 128183\"},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2025-04-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Crystal Growth\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0022024825001319\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CRYSTALLOGRAPHY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Crystal Growth","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0022024825001319","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CRYSTALLOGRAPHY","Score":null,"Total":0}

引用次数: 0

摘要

连续进料法（CCz）被认为是生长杂质轴向均匀分布的大尺寸单晶硅的最先进技术。然而，该方法使用双石英坩埚，导致晶体中氧杂质浓度较高，成为该技术广泛采用的技术瓶颈。本文首先进行了一系列的数值模拟。结果表明，输送到熔晶界面（m-c）的氧主要来自生长区坩埚壁（内坩埚内）的溶解。此外，创造性地阐明了氧在熔体中的扩散路径，从而确定了氧的运输途径。在此基础上，通过增强坩埚旋转诱导的强制对流，降低了单晶硅的氧含量，并对实验结果进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Pathway and control of oxygen transport in the melt during single crystal silicon growth by continuous-feeding Czochralski method

The continuous-feeding Czochralski (CCz) method is regarded as the most advanced technology for the growth of large-sized single crystal silicon with a uniform axial distribution of impurities. However, the use of double quartz crucibles in this method results in a high concentration of oxygen impurities in the crystal, which has become a technical bottleneck for the widespread adoption of this technology. In this paper, a series of numerical simulations were carried out firstly. It was found that the oxygen transported to the melt-crystal (m-c) interface mainly comes from the dissolution at the crucible wall of growth zone (inside the inner crucible). Furthermore, the diffusion path of oxygen in the melt was creatively elucidated, which has enabled the oxygen transport pathway to be identified. Based on this, the oxygen content of single crystal silicon was reduced by enhancing the forced convection induced by crucible rotation, and the result was verified experimentally.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.