Interinfluence of film structures like ferroelectric membranes

An interinfluence effect of neighboring metal-ferroelectric-semiconductor (MFS) membrane structures synthesized on the common insulating layer was found. Different voltages applied to the field electrodes of the two adjacent structures produce, in the free-of-substrate ferroelectric film surrounding the elements, common inhomogeneous deformation and polarization fields through which the interinfluence occurs. The interinfluence phenomenon is strong enough: the HF capacity of the MFS object increases by up to 3 times after applying an up to 5 V bias to the adjacent similar element for which the C–V characteristics are measured. The interinfluence phenomenon was observed in thin-substrate structures whose geometry was far from that of perfect membranes: the thickness of the ferroelectric layer was 66 times smaller than that of the semiconductor. Interinfluence shows itself at each hysteresis loop of the MFS structure C–V characteristic in the transition section between the two plateaus. The capacity of the test specimen increases with the absolute bias value and depends but slightly on the bias polarity applied to the adjacent object.