可靠、大面积、宽带太赫兹波调制器的电激活w掺杂VO2薄膜。

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
ACS Applied Materials & Interfaces Pub Date : 2025-04-23 Epub Date: 2025-04-08 DOI:10.1021/acsami.5c00777
Eduard-Nicolae Sirjita, Alexandre Boulle, Jean-Christophe Orlianges, Richard Mayet, Aurélien Debelle, Lionel Thomé, Maggy Colas, Julie Cornette, Aurelian Crunteanu
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引用次数: 0

摘要

太赫兹调幅器和开关被认为是未来太赫兹通信系统的主要组成部分。尽管发展迅速,但该电磁频谱的调制和开关设备远远落后于其他频率范围。目前,太赫兹调制器面临的主要挑战是在大频带上持续产生高调制深度。此外,为了方便地集成到实际应用中,需要调制/开关特性可以被电气控制。满足所有这些条件的设备仍有待证明。在这项工作中,我们证明了通过直流磁控溅射生长的w掺杂VO2薄膜可以有效地用于开发可靠的、大面积的、宽带太赫兹波调制器。我们证明,W掺杂不仅可以调整VO2的绝缘体到金属转变(IMT)温度,而且最重要的是,可以控制电激活转变的拓扑结构。器件的原位/operando x射线衍射和拉曼光谱表征,加上标准电阻率测量和时域太赫兹光谱,明确表明IMT空间分布的变化是由于W掺杂引起的结构畸变。这些发现被用于验证基于vo2的器件,其IMT可以在3.8 × 10 mm2的面积上热触发或电触发,从而允许开发在大光谱范围(0.2-2 THz)内工作的高效太赫兹调制器,MDs达到96%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Electrically Activated W-Doped VO2 Films for Reliable, Large-Area, Broadband THz Wave Modulators.

THz amplitude modulators and switches are considered to be the main building blocks of future THz communication systems. Despite rapid progress, modulation and switching devices in this electromagnetic spectrum lag far behind other frequency ranges. Currently, THz modulators face major challenges in consistently producing high modulation depths over large frequency bands. Moreover, a convenient integration for practical applications requires that the modulation/switching properties can be electrically controlled. Devices fulfilling all these conditions remain to be demonstrated. In this work, we show that W-doped VO2 films grown by direct-current magnetron sputtering can be efficiently used for the development of reliable, large-area, broadband THz wave modulators. We demonstrate that W doping permits not only to tune the insulator-to-metal transition (IMT) temperature of VO2 but also, most importantly, to control the topology of the electrically activated transition. In situ/operando X-ray diffraction and Raman spectroscopy characterizations of the devices, coupled with standard resistivity measurements and time-domain THz spectroscopy, unambiguously demonstrate that the changes in the spatial distribution of the IMT are due to structural distortions induced by W doping. These findings are exploited to validate VO2-based devices whose IMT can be triggered either thermally or electrically over areas as large as 3.8 × 10 mm2, hence permitting the development of efficient THz modulators operating over a large spectral range (0.2-2 THz) with MDs reaching 96%.

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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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