{"title":"可靠、大面积、宽带太赫兹波调制器的电激活w掺杂VO2薄膜。","authors":"Eduard-Nicolae Sirjita, Alexandre Boulle, Jean-Christophe Orlianges, Richard Mayet, Aurélien Debelle, Lionel Thomé, Maggy Colas, Julie Cornette, Aurelian Crunteanu","doi":"10.1021/acsami.5c00777","DOIUrl":null,"url":null,"abstract":"<p><p>THz amplitude modulators and switches are considered to be the main building blocks of future THz communication systems. Despite rapid progress, modulation and switching devices in this electromagnetic spectrum lag far behind other frequency ranges. Currently, THz modulators face major challenges in consistently producing high modulation depths over large frequency bands. Moreover, a convenient integration for practical applications requires that the modulation/switching properties can be electrically controlled. Devices fulfilling all these conditions remain to be demonstrated. In this work, we show that W-doped VO<sub>2</sub> films grown by direct-current magnetron sputtering can be efficiently used for the development of reliable, large-area, broadband THz wave modulators. We demonstrate that W doping permits not only to tune the insulator-to-metal transition (IMT) temperature of VO<sub>2</sub> but also, most importantly, to control the topology of the electrically activated transition. In situ/operando X-ray diffraction and Raman spectroscopy characterizations of the devices, coupled with standard resistivity measurements and time-domain THz spectroscopy, unambiguously demonstrate that the changes in the spatial distribution of the IMT are due to structural distortions induced by W doping. These findings are exploited to validate VO<sub>2</sub>-based devices whose IMT can be triggered either thermally or electrically over areas as large as 3.8 × 10 mm<sup>2</sup>, hence permitting the development of efficient THz modulators operating over a large spectral range (0.2-2 THz) with MDs reaching 96%.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":" ","pages":"24564-24577"},"PeriodicalIF":8.2000,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electrically Activated W-Doped VO<sub>2</sub> Films for Reliable, Large-Area, Broadband THz Wave Modulators.\",\"authors\":\"Eduard-Nicolae Sirjita, Alexandre Boulle, Jean-Christophe Orlianges, Richard Mayet, Aurélien Debelle, Lionel Thomé, Maggy Colas, Julie Cornette, Aurelian Crunteanu\",\"doi\":\"10.1021/acsami.5c00777\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>THz amplitude modulators and switches are considered to be the main building blocks of future THz communication systems. Despite rapid progress, modulation and switching devices in this electromagnetic spectrum lag far behind other frequency ranges. Currently, THz modulators face major challenges in consistently producing high modulation depths over large frequency bands. Moreover, a convenient integration for practical applications requires that the modulation/switching properties can be electrically controlled. Devices fulfilling all these conditions remain to be demonstrated. In this work, we show that W-doped VO<sub>2</sub> films grown by direct-current magnetron sputtering can be efficiently used for the development of reliable, large-area, broadband THz wave modulators. We demonstrate that W doping permits not only to tune the insulator-to-metal transition (IMT) temperature of VO<sub>2</sub> but also, most importantly, to control the topology of the electrically activated transition. In situ/operando X-ray diffraction and Raman spectroscopy characterizations of the devices, coupled with standard resistivity measurements and time-domain THz spectroscopy, unambiguously demonstrate that the changes in the spatial distribution of the IMT are due to structural distortions induced by W doping. These findings are exploited to validate VO<sub>2</sub>-based devices whose IMT can be triggered either thermally or electrically over areas as large as 3.8 × 10 mm<sup>2</sup>, hence permitting the development of efficient THz modulators operating over a large spectral range (0.2-2 THz) with MDs reaching 96%.</p>\",\"PeriodicalId\":5,\"journal\":{\"name\":\"ACS Applied Materials & Interfaces\",\"volume\":\" \",\"pages\":\"24564-24577\"},\"PeriodicalIF\":8.2000,\"publicationDate\":\"2025-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Materials & Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1021/acsami.5c00777\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"2025/4/8 0:00:00\",\"PubModel\":\"Epub\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.5c00777","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/4/8 0:00:00","PubModel":"Epub","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Electrically Activated W-Doped VO2 Films for Reliable, Large-Area, Broadband THz Wave Modulators.
THz amplitude modulators and switches are considered to be the main building blocks of future THz communication systems. Despite rapid progress, modulation and switching devices in this electromagnetic spectrum lag far behind other frequency ranges. Currently, THz modulators face major challenges in consistently producing high modulation depths over large frequency bands. Moreover, a convenient integration for practical applications requires that the modulation/switching properties can be electrically controlled. Devices fulfilling all these conditions remain to be demonstrated. In this work, we show that W-doped VO2 films grown by direct-current magnetron sputtering can be efficiently used for the development of reliable, large-area, broadband THz wave modulators. We demonstrate that W doping permits not only to tune the insulator-to-metal transition (IMT) temperature of VO2 but also, most importantly, to control the topology of the electrically activated transition. In situ/operando X-ray diffraction and Raman spectroscopy characterizations of the devices, coupled with standard resistivity measurements and time-domain THz spectroscopy, unambiguously demonstrate that the changes in the spatial distribution of the IMT are due to structural distortions induced by W doping. These findings are exploited to validate VO2-based devices whose IMT can be triggered either thermally or electrically over areas as large as 3.8 × 10 mm2, hence permitting the development of efficient THz modulators operating over a large spectral range (0.2-2 THz) with MDs reaching 96%.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.