基于外部电感谐振的IGBT模块寄生共模电容改进提取

IF 2.5 3区 计算机科学 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Junhao Chang;Zili Zhu;Zhaocheng Zhong;Henglin Chen
{"title":"基于外部电感谐振的IGBT模块寄生共模电容改进提取","authors":"Junhao Chang;Zili Zhu;Zhaocheng Zhong;Henglin Chen","doi":"10.1109/TEMC.2025.3552961","DOIUrl":null,"url":null,"abstract":"Half-bridge insulated-gate bipolar transistor (IGBT) modules are widely used in power electronic devices, and the high-speed switching of IGBTs in the modules can cause serious electromagnetic interference (EMI) through parasitic common mode (CM) capacitances in modules. Therefore, accurately extracting the parasitic CM capacitances of IGBT modules is significant for modeling and evaluating the EMI of power electronic equipment. Considering that the original extraction based on the resonance of the external inductor is affected by using asymmetric terminal measurements, this letter proposes an improved extraction method for parasitic CM capacitances of IGBT modules. The calculation method for parasitic CM capacitances of IGBT modules based on impedance measurement is presented. The impact of nonlinearity in junction capacitances during impedance measurements is greatly eliminated. The improved method is validated through measurements.","PeriodicalId":55012,"journal":{"name":"IEEE Transactions on Electromagnetic Compatibility","volume":"67 3","pages":"1026-1030"},"PeriodicalIF":2.5000,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved Extraction of Parasitic Common-Mode Capacitances in IGBT Modules Based on Resonance of External Inductor\",\"authors\":\"Junhao Chang;Zili Zhu;Zhaocheng Zhong;Henglin Chen\",\"doi\":\"10.1109/TEMC.2025.3552961\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Half-bridge insulated-gate bipolar transistor (IGBT) modules are widely used in power electronic devices, and the high-speed switching of IGBTs in the modules can cause serious electromagnetic interference (EMI) through parasitic common mode (CM) capacitances in modules. Therefore, accurately extracting the parasitic CM capacitances of IGBT modules is significant for modeling and evaluating the EMI of power electronic equipment. Considering that the original extraction based on the resonance of the external inductor is affected by using asymmetric terminal measurements, this letter proposes an improved extraction method for parasitic CM capacitances of IGBT modules. The calculation method for parasitic CM capacitances of IGBT modules based on impedance measurement is presented. The impact of nonlinearity in junction capacitances during impedance measurements is greatly eliminated. The improved method is validated through measurements.\",\"PeriodicalId\":55012,\"journal\":{\"name\":\"IEEE Transactions on Electromagnetic Compatibility\",\"volume\":\"67 3\",\"pages\":\"1026-1030\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2025-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electromagnetic Compatibility\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10950136/\",\"RegionNum\":3,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electromagnetic Compatibility","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/10950136/","RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

半桥绝缘栅双极晶体管(IGBT)模块广泛应用于电力电子器件中,IGBT在模块中的高速开关会通过模块中的寄生共模(CM)电容产生严重的电磁干扰(EMI)。因此,准确提取IGBT模块的寄生CM电容对于电力电子设备电磁干扰的建模和评估具有重要意义。考虑到基于外部电感谐振的原始提取受到非对称端子测量的影响,本文提出了一种改进的IGBT模块寄生CM电容提取方法。提出了基于阻抗测量的IGBT模块寄生电容的计算方法。在阻抗测量过程中,极大地消除了结电容非线性的影响。通过实测验证了改进后的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improved Extraction of Parasitic Common-Mode Capacitances in IGBT Modules Based on Resonance of External Inductor
Half-bridge insulated-gate bipolar transistor (IGBT) modules are widely used in power electronic devices, and the high-speed switching of IGBTs in the modules can cause serious electromagnetic interference (EMI) through parasitic common mode (CM) capacitances in modules. Therefore, accurately extracting the parasitic CM capacitances of IGBT modules is significant for modeling and evaluating the EMI of power electronic equipment. Considering that the original extraction based on the resonance of the external inductor is affected by using asymmetric terminal measurements, this letter proposes an improved extraction method for parasitic CM capacitances of IGBT modules. The calculation method for parasitic CM capacitances of IGBT modules based on impedance measurement is presented. The impact of nonlinearity in junction capacitances during impedance measurements is greatly eliminated. The improved method is validated through measurements.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
CiteScore
4.80
自引率
19.00%
发文量
235
审稿时长
2.3 months
期刊介绍: IEEE Transactions on Electromagnetic Compatibility publishes original and significant contributions related to all disciplines of electromagnetic compatibility (EMC) and relevant methods to predict, assess and prevent electromagnetic interference (EMI) and increase device/product immunity. The scope of the publication includes, but is not limited to Electromagnetic Environments; Interference Control; EMC and EMI Modeling; High Power Electromagnetics; EMC Standards, Methods of EMC Measurements; Computational Electromagnetics and Signal and Power Integrity, as applied or directly related to Electromagnetic Compatibility problems; Transmission Lines; Electrostatic Discharge and Lightning Effects; EMC in Wireless and Optical Technologies; EMC in Printed Circuit Board and System Design.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信