{"title":"基于外部电感谐振的IGBT模块寄生共模电容改进提取","authors":"Junhao Chang;Zili Zhu;Zhaocheng Zhong;Henglin Chen","doi":"10.1109/TEMC.2025.3552961","DOIUrl":null,"url":null,"abstract":"Half-bridge insulated-gate bipolar transistor (IGBT) modules are widely used in power electronic devices, and the high-speed switching of IGBTs in the modules can cause serious electromagnetic interference (EMI) through parasitic common mode (CM) capacitances in modules. Therefore, accurately extracting the parasitic CM capacitances of IGBT modules is significant for modeling and evaluating the EMI of power electronic equipment. Considering that the original extraction based on the resonance of the external inductor is affected by using asymmetric terminal measurements, this letter proposes an improved extraction method for parasitic CM capacitances of IGBT modules. The calculation method for parasitic CM capacitances of IGBT modules based on impedance measurement is presented. The impact of nonlinearity in junction capacitances during impedance measurements is greatly eliminated. The improved method is validated through measurements.","PeriodicalId":55012,"journal":{"name":"IEEE Transactions on Electromagnetic Compatibility","volume":"67 3","pages":"1026-1030"},"PeriodicalIF":2.5000,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Improved Extraction of Parasitic Common-Mode Capacitances in IGBT Modules Based on Resonance of External Inductor\",\"authors\":\"Junhao Chang;Zili Zhu;Zhaocheng Zhong;Henglin Chen\",\"doi\":\"10.1109/TEMC.2025.3552961\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Half-bridge insulated-gate bipolar transistor (IGBT) modules are widely used in power electronic devices, and the high-speed switching of IGBTs in the modules can cause serious electromagnetic interference (EMI) through parasitic common mode (CM) capacitances in modules. Therefore, accurately extracting the parasitic CM capacitances of IGBT modules is significant for modeling and evaluating the EMI of power electronic equipment. Considering that the original extraction based on the resonance of the external inductor is affected by using asymmetric terminal measurements, this letter proposes an improved extraction method for parasitic CM capacitances of IGBT modules. The calculation method for parasitic CM capacitances of IGBT modules based on impedance measurement is presented. The impact of nonlinearity in junction capacitances during impedance measurements is greatly eliminated. The improved method is validated through measurements.\",\"PeriodicalId\":55012,\"journal\":{\"name\":\"IEEE Transactions on Electromagnetic Compatibility\",\"volume\":\"67 3\",\"pages\":\"1026-1030\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2025-04-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electromagnetic Compatibility\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10950136/\",\"RegionNum\":3,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electromagnetic Compatibility","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/10950136/","RegionNum":3,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Improved Extraction of Parasitic Common-Mode Capacitances in IGBT Modules Based on Resonance of External Inductor
Half-bridge insulated-gate bipolar transistor (IGBT) modules are widely used in power electronic devices, and the high-speed switching of IGBTs in the modules can cause serious electromagnetic interference (EMI) through parasitic common mode (CM) capacitances in modules. Therefore, accurately extracting the parasitic CM capacitances of IGBT modules is significant for modeling and evaluating the EMI of power electronic equipment. Considering that the original extraction based on the resonance of the external inductor is affected by using asymmetric terminal measurements, this letter proposes an improved extraction method for parasitic CM capacitances of IGBT modules. The calculation method for parasitic CM capacitances of IGBT modules based on impedance measurement is presented. The impact of nonlinearity in junction capacitances during impedance measurements is greatly eliminated. The improved method is validated through measurements.
期刊介绍:
IEEE Transactions on Electromagnetic Compatibility publishes original and significant contributions related to all disciplines of electromagnetic compatibility (EMC) and relevant methods to predict, assess and prevent electromagnetic interference (EMI) and increase device/product immunity. The scope of the publication includes, but is not limited to Electromagnetic Environments; Interference Control; EMC and EMI Modeling; High Power Electromagnetics; EMC Standards, Methods of EMC Measurements; Computational Electromagnetics and Signal and Power Integrity, as applied or directly related to Electromagnetic Compatibility problems; Transmission Lines; Electrostatic Discharge and Lightning Effects; EMC in Wireless and Optical Technologies; EMC in Printed Circuit Board and System Design.