{"title":"基于单相单向换能器的声延迟线频带分析","authors":"Yang Li;Jiawei Li;Tao Wu","doi":"10.1109/JMEMS.2025.3528522","DOIUrl":null,"url":null,"abstract":"This work presents a comprehensive band analysis for calculating the S21 and bandwidth (BW) of acoustic delay lines (ADLs) based on single-phase unidirectional transducers (SPUDTs). Focusing on the electrode layout, the amplitude and phase relationships of the incident fundamental symmetric (S0) Lamb wave and reflected waves at electrode centers (ECs) of Double SPUDT and Bottom Floating (BF) SPUDT unit cells across different frequencies are first investigated. Subsequently, ADLs are conceptualized as a model consisting of unit cells with transduction centers (TCs) and reflection centers (RCs) on each port, with an intermediate gap that introduces propagation loss (PL). Utilizing 1-<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>m-thick aluminum nitride (AlN) and scandium-doped aluminum nitride (Al0.7Sc0.3N) thin films, theoretical modeling and finite element method (FEM) assisted calculations are conducted to compute the reflection (<inline-formula> <tex-math>$\\Gamma $ </tex-math></inline-formula>) and transmission (T) coefficients for both Double SPUDT and BF SPUDT unit cells. The S21 and 5-dB BW in the center frequency (<inline-formula> <tex-math>${f} _{c}$ </tex-math></inline-formula>) vicinity of the ADLs, with cell count (N) ranging from 3 to 13 and gap length (<inline-formula> <tex-math>$L_{g}$ </tex-math></inline-formula>) ranging from 50 to <inline-formula> <tex-math>$300~\\mu $ </tex-math></inline-formula>m, are theoretically computed. The comparison with time-gated measurements demonstrates that the calculation errors are consistently below 5 dB<inline-formula> <tex-math>$\\cdot $ </tex-math></inline-formula>MHz. This analysis provides theoretical insight into the relationships among the ADL’s spectrum, PL, N, SPUDT structure, and piezoelectric film, offering valuable guidance for ADL performance optimization. [2024-0197]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"194-203"},"PeriodicalIF":2.5000,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Band Analysis of Acoustic Delay Lines Based on Single-Phase Unidirectional Transducers\",\"authors\":\"Yang Li;Jiawei Li;Tao Wu\",\"doi\":\"10.1109/JMEMS.2025.3528522\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a comprehensive band analysis for calculating the S21 and bandwidth (BW) of acoustic delay lines (ADLs) based on single-phase unidirectional transducers (SPUDTs). Focusing on the electrode layout, the amplitude and phase relationships of the incident fundamental symmetric (S0) Lamb wave and reflected waves at electrode centers (ECs) of Double SPUDT and Bottom Floating (BF) SPUDT unit cells across different frequencies are first investigated. Subsequently, ADLs are conceptualized as a model consisting of unit cells with transduction centers (TCs) and reflection centers (RCs) on each port, with an intermediate gap that introduces propagation loss (PL). Utilizing 1-<inline-formula> <tex-math>$\\\\mu $ </tex-math></inline-formula>m-thick aluminum nitride (AlN) and scandium-doped aluminum nitride (Al0.7Sc0.3N) thin films, theoretical modeling and finite element method (FEM) assisted calculations are conducted to compute the reflection (<inline-formula> <tex-math>$\\\\Gamma $ </tex-math></inline-formula>) and transmission (T) coefficients for both Double SPUDT and BF SPUDT unit cells. The S21 and 5-dB BW in the center frequency (<inline-formula> <tex-math>${f} _{c}$ </tex-math></inline-formula>) vicinity of the ADLs, with cell count (N) ranging from 3 to 13 and gap length (<inline-formula> <tex-math>$L_{g}$ </tex-math></inline-formula>) ranging from 50 to <inline-formula> <tex-math>$300~\\\\mu $ </tex-math></inline-formula>m, are theoretically computed. The comparison with time-gated measurements demonstrates that the calculation errors are consistently below 5 dB<inline-formula> <tex-math>$\\\\cdot $ </tex-math></inline-formula>MHz. This analysis provides theoretical insight into the relationships among the ADL’s spectrum, PL, N, SPUDT structure, and piezoelectric film, offering valuable guidance for ADL performance optimization. [2024-0197]\",\"PeriodicalId\":16621,\"journal\":{\"name\":\"Journal of Microelectromechanical Systems\",\"volume\":\"34 2\",\"pages\":\"194-203\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2025-02-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Microelectromechanical Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10904223/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Microelectromechanical Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10904223/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Band Analysis of Acoustic Delay Lines Based on Single-Phase Unidirectional Transducers
This work presents a comprehensive band analysis for calculating the S21 and bandwidth (BW) of acoustic delay lines (ADLs) based on single-phase unidirectional transducers (SPUDTs). Focusing on the electrode layout, the amplitude and phase relationships of the incident fundamental symmetric (S0) Lamb wave and reflected waves at electrode centers (ECs) of Double SPUDT and Bottom Floating (BF) SPUDT unit cells across different frequencies are first investigated. Subsequently, ADLs are conceptualized as a model consisting of unit cells with transduction centers (TCs) and reflection centers (RCs) on each port, with an intermediate gap that introduces propagation loss (PL). Utilizing 1-$\mu $ m-thick aluminum nitride (AlN) and scandium-doped aluminum nitride (Al0.7Sc0.3N) thin films, theoretical modeling and finite element method (FEM) assisted calculations are conducted to compute the reflection ($\Gamma $ ) and transmission (T) coefficients for both Double SPUDT and BF SPUDT unit cells. The S21 and 5-dB BW in the center frequency (${f} _{c}$ ) vicinity of the ADLs, with cell count (N) ranging from 3 to 13 and gap length ($L_{g}$ ) ranging from 50 to $300~\mu $ m, are theoretically computed. The comparison with time-gated measurements demonstrates that the calculation errors are consistently below 5 dB$\cdot $ MHz. This analysis provides theoretical insight into the relationships among the ADL’s spectrum, PL, N, SPUDT structure, and piezoelectric film, offering valuable guidance for ADL performance optimization. [2024-0197]
期刊介绍:
The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.