{"title":"模拟 MEMS 环形陀螺仪的温度效应:实现物理感知漂移补偿","authors":"Mehran Hosseini-Pishrobat;Erdinc Tatar","doi":"10.1109/JMEMS.2024.3524796","DOIUrl":null,"url":null,"abstract":"Temperature plays an indispensable role in the long-term performance of MEMS gyroscopes, and despite extensive studies in the literature, analytical treatment of temperature effects is still an open problem. This paper, to the best of our knowledge, is the first attempt to address this gap for ring gyroscopes. We start with a superposition principle that disentangles thermal displacement fields from the gyroscope’s nominal vibration. We set forth a geometrically nonlinear variational formulation to obtain the temperature-induced stiffness matrix. We conduct temperature tests on our 3.2 mm-diameter, 58 kHz ring gyroscopes equipped with 16 capacitive stress sensors. The experimental data validate our analytical modeling in the following key aspects: 1) The model accounts for not only changes in material properties but also a less explored factor, thermal stresses. Thanks to a strain interpolation module that leverages the measured stresses, the model predicts frequency variations consistently and captures hysteresis loops arising from residual stresses. Notably, we accurately estimate the deviation of the temperature coefficient of frequency (TCF) from the expected value −30 ppm/°C (based on the widely known −60 ppm/°C dependency of Young’s modulus of silicon). 2) The model is able to capture stiffness couplings in the orders of less than 0.1 N/m (in a 7 kN/m device) and closely predicts the quadrature error and its leakage into the in-phase channel. Additionally, the model incorporates temperature variations of mechanical scale factor, drive mode’s amplitude, damping coupling, and sense mode’s phase in terms of their contribution to the in-phase error. Based on these merits, our model serves as a building block toward drift compensation algorithms encompassing the underlying physics of the temperature effects. [2024-0163]","PeriodicalId":16621,"journal":{"name":"Journal of Microelectromechanical Systems","volume":"34 2","pages":"150-163"},"PeriodicalIF":2.5000,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10843100","citationCount":"0","resultStr":"{\"title\":\"Modeling Temperature Effects in a MEMS Ring Gyroscope: Toward Physics-Aware Drift Compensation\",\"authors\":\"Mehran Hosseini-Pishrobat;Erdinc Tatar\",\"doi\":\"10.1109/JMEMS.2024.3524796\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Temperature plays an indispensable role in the long-term performance of MEMS gyroscopes, and despite extensive studies in the literature, analytical treatment of temperature effects is still an open problem. This paper, to the best of our knowledge, is the first attempt to address this gap for ring gyroscopes. We start with a superposition principle that disentangles thermal displacement fields from the gyroscope’s nominal vibration. We set forth a geometrically nonlinear variational formulation to obtain the temperature-induced stiffness matrix. We conduct temperature tests on our 3.2 mm-diameter, 58 kHz ring gyroscopes equipped with 16 capacitive stress sensors. The experimental data validate our analytical modeling in the following key aspects: 1) The model accounts for not only changes in material properties but also a less explored factor, thermal stresses. Thanks to a strain interpolation module that leverages the measured stresses, the model predicts frequency variations consistently and captures hysteresis loops arising from residual stresses. Notably, we accurately estimate the deviation of the temperature coefficient of frequency (TCF) from the expected value −30 ppm/°C (based on the widely known −60 ppm/°C dependency of Young’s modulus of silicon). 2) The model is able to capture stiffness couplings in the orders of less than 0.1 N/m (in a 7 kN/m device) and closely predicts the quadrature error and its leakage into the in-phase channel. Additionally, the model incorporates temperature variations of mechanical scale factor, drive mode’s amplitude, damping coupling, and sense mode’s phase in terms of their contribution to the in-phase error. Based on these merits, our model serves as a building block toward drift compensation algorithms encompassing the underlying physics of the temperature effects. [2024-0163]\",\"PeriodicalId\":16621,\"journal\":{\"name\":\"Journal of Microelectromechanical Systems\",\"volume\":\"34 2\",\"pages\":\"150-163\"},\"PeriodicalIF\":2.5000,\"publicationDate\":\"2025-01-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10843100\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Microelectromechanical Systems\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10843100/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Microelectromechanical Systems","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10843100/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Modeling Temperature Effects in a MEMS Ring Gyroscope: Toward Physics-Aware Drift Compensation
Temperature plays an indispensable role in the long-term performance of MEMS gyroscopes, and despite extensive studies in the literature, analytical treatment of temperature effects is still an open problem. This paper, to the best of our knowledge, is the first attempt to address this gap for ring gyroscopes. We start with a superposition principle that disentangles thermal displacement fields from the gyroscope’s nominal vibration. We set forth a geometrically nonlinear variational formulation to obtain the temperature-induced stiffness matrix. We conduct temperature tests on our 3.2 mm-diameter, 58 kHz ring gyroscopes equipped with 16 capacitive stress sensors. The experimental data validate our analytical modeling in the following key aspects: 1) The model accounts for not only changes in material properties but also a less explored factor, thermal stresses. Thanks to a strain interpolation module that leverages the measured stresses, the model predicts frequency variations consistently and captures hysteresis loops arising from residual stresses. Notably, we accurately estimate the deviation of the temperature coefficient of frequency (TCF) from the expected value −30 ppm/°C (based on the widely known −60 ppm/°C dependency of Young’s modulus of silicon). 2) The model is able to capture stiffness couplings in the orders of less than 0.1 N/m (in a 7 kN/m device) and closely predicts the quadrature error and its leakage into the in-phase channel. Additionally, the model incorporates temperature variations of mechanical scale factor, drive mode’s amplitude, damping coupling, and sense mode’s phase in terms of their contribution to the in-phase error. Based on these merits, our model serves as a building block toward drift compensation algorithms encompassing the underlying physics of the temperature effects. [2024-0163]
期刊介绍:
The topics of interest include, but are not limited to: devices ranging in size from microns to millimeters, IC-compatible fabrication techniques, other fabrication techniques, measurement of micro phenomena, theoretical results, new materials and designs, micro actuators, micro robots, micro batteries, bearings, wear, reliability, electrical interconnections, micro telemanipulation, and standards appropriate to MEMS. Application examples and application oriented devices in fluidics, optics, bio-medical engineering, etc., are also of central interest.