Jorge Luis Vazquez Arce, Alessio Amoroso, Nicolas Perez, Jaroslav Charvot, Dominik Naglav Hansen, Panpan Zhao, Jun Yang, Sebastian Lehmann, Angelika Wrzesińska Lashkova, Fabian Pieck, Ralf Tonner Zech, Filip Bureš, Annalisa Acquesta, Yana Vaynzof, Anjana Devi, Kornelius Nielsch, Amin Bahrami
{"title":"外封面：（00l）取向元素铋的低温原子层沉积。化学15/2025)","authors":"Jorge Luis Vazquez Arce, Alessio Amoroso, Nicolas Perez, Jaroslav Charvot, Dominik Naglav Hansen, Panpan Zhao, Jun Yang, Sebastian Lehmann, Angelika Wrzesińska Lashkova, Fabian Pieck, Ralf Tonner Zech, Filip Bureš, Annalisa Acquesta, Yana Vaynzof, Anjana Devi, Kornelius Nielsch, Amin Bahrami","doi":"10.1002/ange.202506105","DOIUrl":null,"url":null,"abstract":"<p>The first successful growth of elemental bismuth (Bi) thin films via thermal atomic layer deposition (ALD) using Bi(NMe<sub>2</sub>)<sub>3</sub> and Sb(SiMe<sub>3</sub>)<sub>3</sub> is reported by Kornelius Nielsch, Amin Bahrami et al. in their Research Article (e202422578) As depicted on the cover picture, the films evolve from island formation to full coverage, accompanied by a preferential growth shift from the (012) to the (003) plane. The resulting films exhibit semimetallic behavior with a resistivity of approximately 200 µΩ·cm. Artwork by the team of INMYWORK Studio.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":7803,"journal":{"name":"Angewandte Chemie","volume":"137 15","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/ange.202506105","citationCount":"0","resultStr":"{\"title\":\"Outside Front Cover: Low Temperature Atomic Layer Deposition of (00l)-Oriented Elemental Bismuth (Angew. Chem. 15/2025)\",\"authors\":\"Jorge Luis Vazquez Arce, Alessio Amoroso, Nicolas Perez, Jaroslav Charvot, Dominik Naglav Hansen, Panpan Zhao, Jun Yang, Sebastian Lehmann, Angelika Wrzesińska Lashkova, Fabian Pieck, Ralf Tonner Zech, Filip Bureš, Annalisa Acquesta, Yana Vaynzof, Anjana Devi, Kornelius Nielsch, Amin Bahrami\",\"doi\":\"10.1002/ange.202506105\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The first successful growth of elemental bismuth (Bi) thin films via thermal atomic layer deposition (ALD) using Bi(NMe<sub>2</sub>)<sub>3</sub> and Sb(SiMe<sub>3</sub>)<sub>3</sub> is reported by Kornelius Nielsch, Amin Bahrami et al. in their Research Article (e202422578) As depicted on the cover picture, the films evolve from island formation to full coverage, accompanied by a preferential growth shift from the (012) to the (003) plane. The resulting films exhibit semimetallic behavior with a resistivity of approximately 200 µΩ·cm. Artwork by the team of INMYWORK Studio.\\n\\n <figure>\\n <div><picture>\\n <source></source></picture><p></p>\\n </div>\\n </figure></p>\",\"PeriodicalId\":7803,\"journal\":{\"name\":\"Angewandte Chemie\",\"volume\":\"137 15\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2025-03-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/ange.202506105\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Angewandte Chemie\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/ange.202506105\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Angewandte Chemie","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/ange.202506105","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Outside Front Cover: Low Temperature Atomic Layer Deposition of (00l)-Oriented Elemental Bismuth (Angew. Chem. 15/2025)
The first successful growth of elemental bismuth (Bi) thin films via thermal atomic layer deposition (ALD) using Bi(NMe2)3 and Sb(SiMe3)3 is reported by Kornelius Nielsch, Amin Bahrami et al. in their Research Article (e202422578) As depicted on the cover picture, the films evolve from island formation to full coverage, accompanied by a preferential growth shift from the (012) to the (003) plane. The resulting films exhibit semimetallic behavior with a resistivity of approximately 200 µΩ·cm. Artwork by the team of INMYWORK Studio.
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