考虑磁场和电场效应的双忆阻FHN电路的非均匀和均匀极端多稳定性

IF 4.6 2区 物理与天体物理 Q1 PHYSICS, MULTIDISCIPLINARY
Yongjie Zhu , Rui Liang , Guangzhe Zhao , Xiaoyun Wang , Yunzhen Zhang
{"title":"考虑磁场和电场效应的双忆阻FHN电路的非均匀和均匀极端多稳定性","authors":"Yongjie Zhu ,&nbsp;Rui Liang ,&nbsp;Guangzhe Zhao ,&nbsp;Xiaoyun Wang ,&nbsp;Yunzhen Zhang","doi":"10.1016/j.cjph.2025.03.033","DOIUrl":null,"url":null,"abstract":"<div><div>The memristor-based neuron circuit considering the magnetic field effect is prone to heterogeneous extreme multistability (EM). However, the electric field effect represented by a charge-controlled memristor can also act on the neuron circuit, causing unusual nonlinear phenomena. To reveal the dynamical effects of magnetic and electric fields on biological neurons, this study proposes a novel non-autonomous dual-memristor FHN circuit considering magnetic and electric field effects. It is achieved by introducing a charge-controlled memristor representing the electric field effect into a single-memristor FHN circuit that considers only the magnetic field effect. The dual-memristor FHN circuit not only emerges the heterogeneous EM dependent on the initial states of the two memristors, but also presents the homogeneous EM whose dynamics can be boosted by the initial state offset of the charge-controlled memristor. The initial state-related bifurcation behaviors are numerically revealed, and the mechanism of homogeneous EM is theoretically interpreted. Further, a flux-charge model dependent on initial state parameters is established by feat of the incremental integral reconstruction, and then the initial state parameters-related stability and bifurcation behaviors are elaborated. Finally, digital implementations based on FPGA platform are provided to confirm the numerical simulations.</div></div>","PeriodicalId":10340,"journal":{"name":"Chinese Journal of Physics","volume":"95 ","pages":"Pages 714-730"},"PeriodicalIF":4.6000,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Heterogeneous and homogeneous extreme multistability in a dual-memristor FHN circuit considering magnetic and electric field effects\",\"authors\":\"Yongjie Zhu ,&nbsp;Rui Liang ,&nbsp;Guangzhe Zhao ,&nbsp;Xiaoyun Wang ,&nbsp;Yunzhen Zhang\",\"doi\":\"10.1016/j.cjph.2025.03.033\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The memristor-based neuron circuit considering the magnetic field effect is prone to heterogeneous extreme multistability (EM). However, the electric field effect represented by a charge-controlled memristor can also act on the neuron circuit, causing unusual nonlinear phenomena. To reveal the dynamical effects of magnetic and electric fields on biological neurons, this study proposes a novel non-autonomous dual-memristor FHN circuit considering magnetic and electric field effects. It is achieved by introducing a charge-controlled memristor representing the electric field effect into a single-memristor FHN circuit that considers only the magnetic field effect. The dual-memristor FHN circuit not only emerges the heterogeneous EM dependent on the initial states of the two memristors, but also presents the homogeneous EM whose dynamics can be boosted by the initial state offset of the charge-controlled memristor. The initial state-related bifurcation behaviors are numerically revealed, and the mechanism of homogeneous EM is theoretically interpreted. Further, a flux-charge model dependent on initial state parameters is established by feat of the incremental integral reconstruction, and then the initial state parameters-related stability and bifurcation behaviors are elaborated. Finally, digital implementations based on FPGA platform are provided to confirm the numerical simulations.</div></div>\",\"PeriodicalId\":10340,\"journal\":{\"name\":\"Chinese Journal of Physics\",\"volume\":\"95 \",\"pages\":\"Pages 714-730\"},\"PeriodicalIF\":4.6000,\"publicationDate\":\"2025-03-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Chinese Journal of Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S057790732500125X\",\"RegionNum\":2,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"PHYSICS, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chinese Journal of Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S057790732500125X","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

考虑磁场效应的忆阻器神经元电路容易产生非均匀极端多稳定性。然而,以电荷控制的忆阻器为代表的电场效应也会作用于神经元电路,导致异常的非线性现象。为了揭示磁场和电场对生物神经元的动态影响,本研究提出了一种考虑磁场和电场效应的非自主双忆阻FHN电路。它是通过在只考虑磁场效应的单忆阻FHN电路中引入一个代表电场效应的电荷控制忆阻器来实现的。双忆阻器FHN电路不仅表现出依赖于两个忆阻器初始状态的异质电磁,而且表现出电荷控制的忆阻器初始状态偏移可以增强其动力学特性的均匀电磁。数值揭示了初始状态相关的分岔行为,并从理论上解释了均匀电磁的作用机理。在此基础上,通过增量积分重构建立了依赖于初始状态参数的通量电荷模型,并对初始状态参数相关的稳定性和分岔行为进行了阐述。最后,给出了基于FPGA平台的数字实现,验证了数值仿真结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Heterogeneous and homogeneous extreme multistability in a dual-memristor FHN circuit considering magnetic and electric field effects

Heterogeneous and homogeneous extreme multistability in a dual-memristor FHN circuit considering magnetic and electric field effects
The memristor-based neuron circuit considering the magnetic field effect is prone to heterogeneous extreme multistability (EM). However, the electric field effect represented by a charge-controlled memristor can also act on the neuron circuit, causing unusual nonlinear phenomena. To reveal the dynamical effects of magnetic and electric fields on biological neurons, this study proposes a novel non-autonomous dual-memristor FHN circuit considering magnetic and electric field effects. It is achieved by introducing a charge-controlled memristor representing the electric field effect into a single-memristor FHN circuit that considers only the magnetic field effect. The dual-memristor FHN circuit not only emerges the heterogeneous EM dependent on the initial states of the two memristors, but also presents the homogeneous EM whose dynamics can be boosted by the initial state offset of the charge-controlled memristor. The initial state-related bifurcation behaviors are numerically revealed, and the mechanism of homogeneous EM is theoretically interpreted. Further, a flux-charge model dependent on initial state parameters is established by feat of the incremental integral reconstruction, and then the initial state parameters-related stability and bifurcation behaviors are elaborated. Finally, digital implementations based on FPGA platform are provided to confirm the numerical simulations.
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来源期刊
Chinese Journal of Physics
Chinese Journal of Physics 物理-物理:综合
CiteScore
8.50
自引率
10.00%
发文量
361
审稿时长
44 days
期刊介绍: The Chinese Journal of Physics publishes important advances in various branches in physics, including statistical and biophysical physics, condensed matter physics, atomic/molecular physics, optics, particle physics and nuclear physics. The editors welcome manuscripts on: -General Physics: Statistical and Quantum Mechanics, etc.- Gravitation and Astrophysics- Elementary Particles and Fields- Nuclear Physics- Atomic, Molecular, and Optical Physics- Quantum Information and Quantum Computation- Fluid Dynamics, Nonlinear Dynamics, Chaos, and Complex Networks- Plasma and Beam Physics- Condensed Matter: Structure, etc.- Condensed Matter: Electronic Properties, etc.- Polymer, Soft Matter, Biological, and Interdisciplinary Physics. CJP publishes regular research papers, feature articles and review papers.
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