Zhenyi Su, Weihao Xie, Quanzhen Sun, Yifan Li, Zhipan Zhong, Weihuang Wang, Caixia Zhang, Hui Deng* and Shuying Cheng*,
{"title":"通过CuO牺牲层克服后界面障碍提高柔性Cu2ZnSn(S,Se)4太阳能电池效率","authors":"Zhenyi Su, Weihao Xie, Quanzhen Sun, Yifan Li, Zhipan Zhong, Weihuang Wang, Caixia Zhang, Hui Deng* and Shuying Cheng*, ","doi":"10.1021/acsmaterialslett.4c0242110.1021/acsmaterialslett.4c02421","DOIUrl":null,"url":null,"abstract":"<p >The optimization of the back interface is an important means of improving the power conversion efficiency (PCE) of Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> (CZTSSe) solar cells. Here, a CuO sacrificial layer is introduced into the Mo/CZTSSe back interface to improve device efficiency. The insertion of the CuO sacrificial layer inhibits the formation of Sn(S,Se)<sub>2</sub> secondary phases in the CZTSSe film. Meanwhile, the interfacial trap state (<i>N</i><sub>IT</sub>) is reduced by about 22%. Furthermore, the 75 nm CuO sacrificial layer can reduce the thickness of the MoSe<sub>2</sub> layer, leading to a 33.18 meV reduction in the back interfacial barrier. This design enhances the back interfacial transport characteristics and suppresses defects. Finally, the flexible CZTSSe solar cell achieve the efficiency of 10.57%.</p>","PeriodicalId":19,"journal":{"name":"ACS Materials Letters","volume":"7 4","pages":"1329–1335 1329–1335"},"PeriodicalIF":9.6000,"publicationDate":"2025-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Overcoming Back Interfacial Barrier Improves Flexible Cu2ZnSn(S,Se)4 Solar Cell Efficiency via CuO Sacrificial Layers\",\"authors\":\"Zhenyi Su, Weihao Xie, Quanzhen Sun, Yifan Li, Zhipan Zhong, Weihuang Wang, Caixia Zhang, Hui Deng* and Shuying Cheng*, \",\"doi\":\"10.1021/acsmaterialslett.4c0242110.1021/acsmaterialslett.4c02421\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >The optimization of the back interface is an important means of improving the power conversion efficiency (PCE) of Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> (CZTSSe) solar cells. Here, a CuO sacrificial layer is introduced into the Mo/CZTSSe back interface to improve device efficiency. The insertion of the CuO sacrificial layer inhibits the formation of Sn(S,Se)<sub>2</sub> secondary phases in the CZTSSe film. Meanwhile, the interfacial trap state (<i>N</i><sub>IT</sub>) is reduced by about 22%. Furthermore, the 75 nm CuO sacrificial layer can reduce the thickness of the MoSe<sub>2</sub> layer, leading to a 33.18 meV reduction in the back interfacial barrier. This design enhances the back interfacial transport characteristics and suppresses defects. Finally, the flexible CZTSSe solar cell achieve the efficiency of 10.57%.</p>\",\"PeriodicalId\":19,\"journal\":{\"name\":\"ACS Materials Letters\",\"volume\":\"7 4\",\"pages\":\"1329–1335 1329–1335\"},\"PeriodicalIF\":9.6000,\"publicationDate\":\"2025-03-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Materials Letters\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsmaterialslett.4c02421\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Materials Letters","FirstCategoryId":"92","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsmaterialslett.4c02421","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Overcoming Back Interfacial Barrier Improves Flexible Cu2ZnSn(S,Se)4 Solar Cell Efficiency via CuO Sacrificial Layers
The optimization of the back interface is an important means of improving the power conversion efficiency (PCE) of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. Here, a CuO sacrificial layer is introduced into the Mo/CZTSSe back interface to improve device efficiency. The insertion of the CuO sacrificial layer inhibits the formation of Sn(S,Se)2 secondary phases in the CZTSSe film. Meanwhile, the interfacial trap state (NIT) is reduced by about 22%. Furthermore, the 75 nm CuO sacrificial layer can reduce the thickness of the MoSe2 layer, leading to a 33.18 meV reduction in the back interfacial barrier. This design enhances the back interfacial transport characteristics and suppresses defects. Finally, the flexible CZTSSe solar cell achieve the efficiency of 10.57%.
期刊介绍：
ACS Materials Letters is a journal that publishes high-quality and urgent papers at the forefront of fundamental and applied research in the field of materials science. It aims to bridge the gap between materials and other disciplines such as chemistry, engineering, and biology. The journal encourages multidisciplinary and innovative research that addresses global challenges. Papers submitted to ACS Materials Letters should clearly demonstrate the need for rapid disclosure of key results. The journal is interested in various areas including the design, synthesis, characterization, and evaluation of emerging materials, understanding the relationships between structure, property, and performance, as well as developing materials for applications in energy, environment, biomedical, electronics, and catalysis. The journal has a 2-year impact factor of 11.4 and is dedicated to publishing transformative materials research with fast processing times. The editors and staff of ACS Materials Letters actively participate in major scientific conferences and engage closely with readers and authors. The journal also maintains an active presence on social media to provide authors with greater visibility.
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