通过可控热处理工艺制作低损耗、高直流偏压性能的非晶软磁粉芯

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Hao Li, Yujie Yang, Zhengyu Zhang, Hongyu Ding, Zhihao Geng
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引用次数: 0

摘要

热处理可以有效降低磁粉磁芯的磁滞损耗,但对非晶磁粉磁芯的研究仍然有限。本研究通过逐步加热和控制保温时间,制备了低损耗、高直流偏置性能的FeSiBCr/ZnO粉末芯。ZnO绝缘层降低了涡流损耗,而逐步加热使残余应力最小化,从而降低了磁滞损耗。在445℃下退火1 h后,迟滞损耗降至57.5 mW/cm3,比325℃时降低了66.3%。保温时间为0.5 ~ 3小时,损耗分别为75、74、67和66 mW/cm3,延长保温时间可进一步降低损耗。在405℃下退火1 h后,FeSiBCr粉芯损耗为292.5 mW/cm3 (1000 kHz, 20 mT),直流偏压为79%。这项工作提供了关键的见解,优化非晶核心退火,以尽量减少损失。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fabrication of amorphous soft magnetic powder cores with low loss and high DC bias performance by controllable heat treatment process

Heat treatment can effectively reduce the hysteresis loss of magnetic powder cores, but research on amorphous powder cores remains limited. In this study, FeSiBCr/ZnO powder cores with low loss and high DC bias performance were prepared by gradually heating and controlling the holding time. The ZnO insulating layer reduced eddy current loss, while stepwise heating minimized residual stress, thereby lowering hysteresis loss. After annealing at 445 ℃ for 1 h, the hysteresis loss is reduced to 57.5 mW/cm3, representing a 66.3% reduction compared to that at 325 °C. Holding times of 0.5 to 3 h yielded losses of 75, 74, 67, and 66 mW/cm3, showing extended times further reduce losses. After annealing at 405 ℃ for 1 h, the loss of FeSiBCr powder core is 292.5 mW/cm3 (1000 kHz, 20 mT) and the DC bias is 79%. This work provides key insights for optimizing amorphous core annealing to minimize losses.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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