{"title":"通过高温极化提高掺铜 (Ba0.94Ca0.06)(Zr0.05Ti0.95)O3陶瓷的性能和原位微观畴演化","authors":"Yingchun Liu, Xianghe Meng, Wenming Shi, Yuanhao Deng, Hongjun Zhang","doi":"10.1007/s10854-025-14722-1","DOIUrl":null,"url":null,"abstract":"<div><p>The high-temperature poling strategy (110 °C, 30 kV/cm, 20 min) was imposed on Cu-doped (Ba<sub>0.94</sub>Ca<sub>0.06</sub>)(Zr<sub>0.05</sub>Ti<sub>0.95</sub>)O<sub>3</sub> ceramics which had the Curie temperature of 117 °C, to enhance the piezoelectric performances. The high-temperature poled piezoelectric constants <i>d</i><sub>33</sub> and electromechanical coupling factors <i>k</i><sub>p</sub> were 410 pC/N and 0.516, which were enhanced by 17.1% and 15.4%, respectively, higher than that of traditional poled ones. Effects of high-temperature poling on the switching characteristic between non-180° and 180° domains were verified by the intensity ratio of splitting peaks at 2<i>θ</i> around 45°, using the X-ray diffraction analysis. The high-temperature poled samples showed more asymmetric hysteresis loops, with higher internal bias field of 1.8 kV/cm, maximum polarization of 18.5 μC/cm<sup>2</sup>, and residual polarization of 10.7 μC/cm<sup>2</sup>, but lower coercive field of 2.5 kV/cm and smaller positive hysteresis of 1.3%. The high-field piezoelectric constant <i>d</i><sub>33</sub><sup>*</sup> showed a pronounced jump of 112.2 pm/V at 110 °C, confirming the optimal poling temperature. The stronger compensating defect dipole field mainly contributed to the asymmetry. And the tiny and easily reversible domains, observed by the in-situ piezoelectric force microscopy, were responsible to the improvement on piezoelectricity.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced performances and in-situ microscopic domain evolution of Cu-doped (Ba0.94Ca0.06)(Zr0.05Ti0.95)O3 ceramic by high-temperature poling\",\"authors\":\"Yingchun Liu, Xianghe Meng, Wenming Shi, Yuanhao Deng, Hongjun Zhang\",\"doi\":\"10.1007/s10854-025-14722-1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The high-temperature poling strategy (110 °C, 30 kV/cm, 20 min) was imposed on Cu-doped (Ba<sub>0.94</sub>Ca<sub>0.06</sub>)(Zr<sub>0.05</sub>Ti<sub>0.95</sub>)O<sub>3</sub> ceramics which had the Curie temperature of 117 °C, to enhance the piezoelectric performances. The high-temperature poled piezoelectric constants <i>d</i><sub>33</sub> and electromechanical coupling factors <i>k</i><sub>p</sub> were 410 pC/N and 0.516, which were enhanced by 17.1% and 15.4%, respectively, higher than that of traditional poled ones. Effects of high-temperature poling on the switching characteristic between non-180° and 180° domains were verified by the intensity ratio of splitting peaks at 2<i>θ</i> around 45°, using the X-ray diffraction analysis. The high-temperature poled samples showed more asymmetric hysteresis loops, with higher internal bias field of 1.8 kV/cm, maximum polarization of 18.5 μC/cm<sup>2</sup>, and residual polarization of 10.7 μC/cm<sup>2</sup>, but lower coercive field of 2.5 kV/cm and smaller positive hysteresis of 1.3%. The high-field piezoelectric constant <i>d</i><sub>33</sub><sup>*</sup> showed a pronounced jump of 112.2 pm/V at 110 °C, confirming the optimal poling temperature. The stronger compensating defect dipole field mainly contributed to the asymmetry. And the tiny and easily reversible domains, observed by the in-situ piezoelectric force microscopy, were responsible to the improvement on piezoelectricity.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 10\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-04-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14722-1\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14722-1","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Enhanced performances and in-situ microscopic domain evolution of Cu-doped (Ba0.94Ca0.06)(Zr0.05Ti0.95)O3 ceramic by high-temperature poling
The high-temperature poling strategy (110 °C, 30 kV/cm, 20 min) was imposed on Cu-doped (Ba0.94Ca0.06)(Zr0.05Ti0.95)O3 ceramics which had the Curie temperature of 117 °C, to enhance the piezoelectric performances. The high-temperature poled piezoelectric constants d33 and electromechanical coupling factors kp were 410 pC/N and 0.516, which were enhanced by 17.1% and 15.4%, respectively, higher than that of traditional poled ones. Effects of high-temperature poling on the switching characteristic between non-180° and 180° domains were verified by the intensity ratio of splitting peaks at 2θ around 45°, using the X-ray diffraction analysis. The high-temperature poled samples showed more asymmetric hysteresis loops, with higher internal bias field of 1.8 kV/cm, maximum polarization of 18.5 μC/cm2, and residual polarization of 10.7 μC/cm2, but lower coercive field of 2.5 kV/cm and smaller positive hysteresis of 1.3%. The high-field piezoelectric constant d33* showed a pronounced jump of 112.2 pm/V at 110 °C, confirming the optimal poling temperature. The stronger compensating defect dipole field mainly contributed to the asymmetry. And the tiny and easily reversible domains, observed by the in-situ piezoelectric force microscopy, were responsible to the improvement on piezoelectricity.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.