金属有机骨架表面二进制数据的激光直接写入

IF 2.5 3区 物理与天体物理 Q3 MATERIALS SCIENCE, MULTIDISCIPLINARY
Varvara Kharitonova , Anastasia Lubimova , Valentin A. Milichko , Semyon V. Bachinin
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引用次数: 0

摘要

当今光电计算系统的发展正以前所未有的速度进行,需要出现新的方法和材料来记录和存储数据。本文报道了一种在分辨率为1.5 μm、波长为0.5 s的金属有机骨架(MOF)薄膜表面直接激光写入二进制数据的方法。数据表示为不同深度和势的局部修正区域,并在开尔文探针体制下用原子力显微镜进行了分析。结果表明,随着激光功率的增加,修饰后的MOF表面电位增加到100 mV(初始MOF表面电位为10 mV),面积直径减小到1.5 μm。用共聚焦拉曼光谱研究了DLW的作用机理,证实了MOF薄膜结构的局部修饰。因此,该结果为在环境条件下mof上具有兼容密度的电子数据的快速光学写入开辟了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Direct laser writing of binary data on metal-organic framework surface
The development of electro-optical computing systems today is proceeding at an unprecedented pace and requires the emergence of new approaches and materials for data recording and storage. Here we report on a direct laser writing (DLW) of binary data on a surface of metal-organic framework (MOF) thin film over 0.5 s with 1.5 μm resolution. The data, expressed as locally modified areas of different depth and potential, are analyzed with atomic force microscopy in Kelvin-probe regime. We reveal that an increase in laser power yields an increase in the potential of the modified area up to 100 mV (compared with 10 mV for the initial MOF surface) and decrease of the area diameter up to 1.5 μm. The mechanism of DLW is also investigated with confocal Raman spectroscopy, confirming the local modification of the structure of MOF thin film. The results, thereby, open the way for fast optical writing of electronic data with compatible density on MOFs at ambient conditions.
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来源期刊
CiteScore
5.00
自引率
3.70%
发文量
77
审稿时长
62 days
期刊介绍: This journal establishes a dedicated channel for physicists, material scientists, chemists, engineers and computer scientists who are interested in photonics and nanostructures, and especially in research related to photonic crystals, photonic band gaps and metamaterials. The Journal sheds light on the latest developments in this growing field of science that will see the emergence of faster telecommunications and ultimately computers that use light instead of electrons to connect components.
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