Al2O3/金刚石MOS结构近界面陷阱密度分布分析

IF 4.3 3区材料科学 Q2 MATERIALS SCIENCE, COATINGS & FILMS

Diamond and Related Materials Pub Date : 2025-04-02 DOI:10.1016/j.diamond.2025.112275

Xueqia Zhang, Xufang Zhang, Mingkun Li, Jing Zhang

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引用次数: 0

摘要

研制了反转型p沟道金刚石mosfet，实现了正常关断特性。然而，尽管水蒸气退火显著降低了Al2O3/金刚石MOS界面的界面态密度，但它们的通道迁移率仍然很低。我们还观察到在积累条件下电容的显著频率色散，这主要归因于近界面陷阱（NITs）。在这项工作中，我们重点研究了Al2O3/金刚石结构在300 K， 350 K和400 K下的NITs特性，使用分布式电路模型。考虑了nit的各种可能分布，包括箱形分布、线性衰减、指数衰减和均匀分布，以适应这些温度下的电容频率（C-f）特性。从拟合结果的误差比较来看，均匀分布对C-f的拟合误差最小。根据最佳拟合结果提取NIT密度和其他相关参数，并讨论了可能的物理起源。这项工作为nit的进一步钝化奠定了基础，这对提高器件性能至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Density distribution analysis of near-interface traps in Al2O3/diamond MOS structure

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Density distribution analysis of near-interface traps in Al2O3/diamond MOS structure

Inversion-type p-channel diamond MOSFETs have been developed and normally-off characteristics have been realized. However, they still suffer from low channel mobility, despite water vapor annealing significantly reducing the interface state density at the Al₂O₃/diamond MOS interface. We have also observed notable frequency dispersion of capacitance under accumulation conditions, which is mainly attributed to near-interface traps (NITs). In this work, we focused on characterizing NITs in Al₂O₃/diamond structures at 300 K, 350 K, and 400 K, using a distributed circuit model. Various possible distributions for NITs were considered, including box-shaped, linearly-decaying, exponentially-decaying, and uniform distributions, to fit the capacitance–frequency (C–f) characteristics at these temperatures. Based on error comparisons from the fitting results, the uniform distribution exhibited the smallest fitting errors for C–f. The NIT density and other related parameters were extracted based on the best-fitting results, with possible physical origins discussed. This work lays the groundwork for further passivation of NITs, which is critical for improving device performance.

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来源期刊

Diamond and Related Materials 工程技术-材料科学：综合

CiteScore

6.00

自引率

14.60%

发文量

702

审稿时长

2.1 months

期刊介绍： DRM is a leading international journal that publishes new fundamental and applied research on all forms of diamond, the integration of diamond with other advanced materials and development of technologies exploiting diamond. The synthesis, characterization and processing of single crystal diamond, polycrystalline films, nanodiamond powders and heterostructures with other advanced materials are encouraged topics for technical and review articles. In addition to diamond, the journal publishes manuscripts on the synthesis, characterization and application of other related materials including diamond-like carbons, carbon nanotubes, graphene, and boron and carbon nitrides. Articles are sought on the chemical functionalization of diamond and related materials as well as their use in electrochemistry, energy storage and conversion, chemical and biological sensing, imaging, thermal management, photonic and quantum applications, electron emission and electronic devices. The International Conference on Diamond and Carbon Materials has evolved into the largest and most well attended forum in the field of diamond, providing a forum to showcase the latest results in the science and technology of diamond and other carbon materials such as carbon nanotubes, graphene, and diamond-like carbon. Run annually in association with Diamond and Related Materials the conference provides junior and established researchers the opportunity to exchange the latest results ranging from fundamental physical and chemical concepts to applied research focusing on the next generation carbon-based devices.