基于磁对齐Ni@CF复合材料的自供电柔性压电传感器

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Yinhui Li, Fei Gao, Weidong Li, Rongyan Yin, Qiguo Li, Jianguo Liang, Peng Zhao, Hongyan Zhao, Pengwei Li, Guibin Bian
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引用次数: 0

摘要

设计用于感知生理状态的电子技术的进步在个人护理应用中显示出巨大的希望。然而,尽管柔性器件的发展取得了进展,但粘附性差和灵敏度不足仍然是主要的限制。在此,我们提出了一种高性能的柔性压电传感器,该传感器采用镀镍短碳纤维(Ni@CF)/聚丙烯腈(PAN)复合薄膜制成。通过磁场辅助制造方法,将Ni@CF对准PAN基体。系统研究了Ni@CF配比和取向度对Ni@CF/PAN复合膜电性能的影响。随着Ni@CF掺杂比例的增加,随机Ni@CF/PAN柔性压电传感器的输出性能先升高后降低,当Ni@CF掺杂比例为4.0 wt%时,输出电压峰值为3.99 V,输出电流峰值为2.01 μA。Ni@CF/PAN柔性压电传感器的输出性能与Ni@CF取向度呈线性相关。基于定向Ni@CF/PAN薄膜的柔性压电传感器输出电压和电流分别为4.94 V和2.31 μA,比随机Ni@CF/PAN薄膜传感器分别提高27%和11%。定向Ni@CF/PAN薄膜传感器的灵敏度为0.87 V/N,比随机Ni@CF/PAN薄膜传感器提高了30%。定向Ni@CF/PAN传感器的响应时间和恢复时间分别为29 ms和23 ms。此外,Ni@CF/PAN柔性压电传感器的耐用性通过超过10,000次循环的压放测试来测量。通过使用Ni@CF/PAN柔性压电传感器为电容器充电,然后放电以点亮商用红色LED,验证了自供电的可行性。此外,Ni@CF/PAN复合薄膜传感器被证明可以有效地监测来自身体各个部位的人类活动信号,包括颈部、喉咙、膝盖和脚。结果表明,Ni@CF/PAN柔性压电传感器在智能医疗、电子皮肤、可穿戴电子等领域具有广泛的应用前景。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Self-powered flexible piezoelectric sensor based on magnetically aligned Ni@CF composites

Advancements in electronics designed to sense physiological states have shown great promise for personal care applications. However, despite progress in flexible device development, poor adhesion and insufficient sensitivity are still main limitations. Herein, we present a high-performance and flexible piezoelectric sensor fabricated using a nickel-plated short carbon fiber (Ni@CF)/polyacrylonitrile (PAN) composite film. The Ni@CF was aligned within the PAN matrix through a magnetic field-assisted fabrication method. The effects of Ni@CF proportions and orientation degrees on the electrical properties of the Ni@CF/PAN composite film were systematically studied. The output performance of random Ni@CF/PAN flexible piezoelectric sensor first increases and then decreases as the Ni@CF proportion increases, achieving a peak output voltage of 3.99 V and a peak output current of 2.01 μA when the doping proportion of Ni@CF was 4.0 wt%. The output performance of Ni@CF/PAN flexible piezoelectric sensor is linearly correlated with Ni@CF orientation degree. The output voltage and current of the flexible piezoelectric sensor based on oriented Ni@CF/PAN film are 4.94 V and 2.31 μA, representing enhancements 27% and 11%, respectively, compared to random Ni@CF/PAN film sensor. The sensitivity of oriented Ni@CF/PAN film sensor is 0.87 V/N, making a 30% improvement than random Ni@CF/PAN film sensor. The response and recovery times of the oriented Ni@CF/PAN sensor are 29 ms and 23 ms, respectively. Furthermore, the durability of the Ni@CF/PAN flexible piezoelectric sensor was measured through a pressing-releasing test of over 10,000 cycles. The feasibility of self-powering was verified by using the Ni@CF/PAN flexible piezoelectric sensor to charge a capacitor, which was then discharged to light up a commercial red LED. Additionally, the Ni@CF/PAN composite film sensor proves effective in monitoring human activity signals from various body parts, including the neck, throat, knee, and foot. The results indicate that the Ni@CF/PAN flexible piezoelectric sensor holds great promise for widespread applications in smart healthcare, electronic skin, wearable electronic, and so on.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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