Sanjida Akter, Dinelka Somaweera, Khalil As’Ham, Salah Abdo, Andrey E. Miroshnichenko, Haroldo Takashi Hattori
{"title":"基于Mo2C/SiC异质结构的高性能近紫外光电探测器","authors":"Sanjida Akter, Dinelka Somaweera, Khalil As’Ham, Salah Abdo, Andrey E. Miroshnichenko, Haroldo Takashi Hattori","doi":"10.1002/adpr.202400210","DOIUrl":null,"url":null,"abstract":"<p>In this work, the results for a fabricated photodetector (PD) based on a molybdenum carbide (Mo<sub>2</sub>C) layer integrated with an n-doped 4H-silicon carbide (SiC) substrate, designed to operate in the near-ultraviolet, are presented. The Mo<sub>2</sub>C layer is sputtered onto a cleaned SiC substrate, followed by the deposition of aluminum (Al) electrodes using electron beam evaporation to complete the PD structure. The fabricated PD is characterized under 405 nm ultraviolet (UV) light, revealing a maximum responsivity of 3.6 A W<sup>−1</sup> and detectivity of 2.11 × 10<sup>8</sup> at a bias voltage of −2.5 V.</p>","PeriodicalId":7263,"journal":{"name":"Advanced Photonics Research","volume":"6 4","pages":""},"PeriodicalIF":3.7000,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400210","citationCount":"0","resultStr":"{\"title\":\"High-Performance Near-Ultraviolet Photodetector Using Mo2C/SiC Heterostructure\",\"authors\":\"Sanjida Akter, Dinelka Somaweera, Khalil As’Ham, Salah Abdo, Andrey E. Miroshnichenko, Haroldo Takashi Hattori\",\"doi\":\"10.1002/adpr.202400210\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>In this work, the results for a fabricated photodetector (PD) based on a molybdenum carbide (Mo<sub>2</sub>C) layer integrated with an n-doped 4H-silicon carbide (SiC) substrate, designed to operate in the near-ultraviolet, are presented. The Mo<sub>2</sub>C layer is sputtered onto a cleaned SiC substrate, followed by the deposition of aluminum (Al) electrodes using electron beam evaporation to complete the PD structure. The fabricated PD is characterized under 405 nm ultraviolet (UV) light, revealing a maximum responsivity of 3.6 A W<sup>−1</sup> and detectivity of 2.11 × 10<sup>8</sup> at a bias voltage of −2.5 V.</p>\",\"PeriodicalId\":7263,\"journal\":{\"name\":\"Advanced Photonics Research\",\"volume\":\"6 4\",\"pages\":\"\"},\"PeriodicalIF\":3.7000,\"publicationDate\":\"2025-02-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://onlinelibrary.wiley.com/doi/epdf/10.1002/adpr.202400210\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Photonics Research\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/adpr.202400210\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Photonics Research","FirstCategoryId":"1085","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adpr.202400210","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
摘要
本文介绍了一种基于碳化钼（Mo2C）层与氮掺杂4h碳化硅（SiC）衬底集成的光电探测器（PD）的制备结果，该探测器设计用于近紫外工作。将Mo2C层溅射到清洁的SiC衬底上，然后使用电子束蒸发沉积铝（Al）电极以完成PD结构。在405 nm紫外光下对PD进行了表征，在- 2.5 V的偏置电压下，PD的最大响应度为3.6 a W−1，探测率为2.11 × 108。
High-Performance Near-Ultraviolet Photodetector Using Mo2C/SiC Heterostructure
In this work, the results for a fabricated photodetector (PD) based on a molybdenum carbide (Mo2C) layer integrated with an n-doped 4H-silicon carbide (SiC) substrate, designed to operate in the near-ultraviolet, are presented. The Mo2C layer is sputtered onto a cleaned SiC substrate, followed by the deposition of aluminum (Al) electrodes using electron beam evaporation to complete the PD structure. The fabricated PD is characterized under 405 nm ultraviolet (UV) light, revealing a maximum responsivity of 3.6 A W−1 and detectivity of 2.11 × 108 at a bias voltage of −2.5 V.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
