两种含大尺寸Ba离子的石榴石结构Y2BaM4SiO12 (M = Al, Ga)陶瓷的相组成和微波介电性能

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Junqi Chen, Haotian Xie, Zhaohui Wang, Jingjing An, Peilin Qing, Jinwu Chen
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引用次数: 0

摘要

采用固相反应法制备了两种具有石榴石结构的新型含钡Y2BaM4SiO12 (M = Al, Ga)陶瓷。XRD图谱结合Rietveld细化分析表明,Y2BaAl4SiO12形成了具有Ia-3d空间基的单立方结构相。而在Y2BaGa4SiO12陶瓷中,除了石榴石结构的主相外,还检测到微量的SiO2峰。化学键价和P-V-L化学键理论分析结果表明,两种Ba阳离子在Y2BaM4SiO12 (M = Al, Ga)陶瓷中均表现出强度压缩效应。Al-O键的大晶格能可能是Y2BaAl4SiO12形成无二次相和高Q × f值的稳定石榴石晶体结构的主要原因。Y2BaGa4SiO12陶瓷具有低相对密度(91%),微波介电性能εr = 12.6, Q × f = 4,530 GHz, τf =−28.6 ppm/°C。在1360℃下保温4 h,得到了相对密度为96.2%的致密Y2BaAl4SiO12陶瓷,其微波介电性能εr = 10.3, Q × f = 8,700 GHz, τf = - 20.3 ppm/°C。结果表明,在石榴石结构中,a位或C位阳离子的失配将导致低温和Q × f值的严重恶化。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Phase composition and microwave dielectric properties of two garnet structured Y2BaM4SiO12 (M = Al, Ga) ceramics with large size Ba cations on A-site

In this work, two novel Ba-contained Y2BaM4SiO12 (M = Al, Ga) ceramics with garnet structured were obtained by a solid-state reaction method. XRD patterns combined with Rietveld refinement analysis demonstrated that Y2BaAl4SiO12 was formed a single cubic structure phase with an Ia-3d space group. While in the Y2BaGa4SiO12 ceramics, apart from the main phase of garnet structure, a trace of peaks of SiO2 were also detected. The bond valence and P–V–L chemical bond theory analysis results indicated that both of Ba cations presents a strength compressed effect in the Y2BaM4SiO12 (M = Al, Ga) ceramics. And the large lattice energy of Al-O bonds might be the main reason for the Y2BaAl4SiO12 formation of a stable garnet crystal structure without secondary phase and high Q × f values. The Y2BaGa4SiO12 ceramics with a low relative density (91%) and microwave dielectric properties of εr = 12.6, Q × f = 4,530 GHz, and τf = − 28.6 ppm/°C. The dense Y2BaAl4SiO12 ceramics (relative density of 96.2%) with microwave dielectric properties of εr = 10.3, Q × f = 8,700 GHz, and τf = − 20.3 ppm/°C was obtained at 1360 °C for 4 h. In the garnet structure, all the results demonstrates that the mismatch among the A-sites or C-sites cations will result in a low-fired temperature and severely deteriorated Q × f values.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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