{"title":"两种含大尺寸Ba离子的石榴石结构Y2BaM4SiO12 (M = Al, Ga)陶瓷的相组成和微波介电性能","authors":"Junqi Chen, Haotian Xie, Zhaohui Wang, Jingjing An, Peilin Qing, Jinwu Chen","doi":"10.1007/s10854-025-14559-8","DOIUrl":null,"url":null,"abstract":"<div><p>In this work, two novel Ba-contained Y<sub>2</sub>BaM<sub>4</sub>SiO<sub>12</sub> (M = Al, Ga) ceramics with garnet structured were obtained by a solid-state reaction method. XRD patterns combined with Rietveld refinement analysis demonstrated that Y<sub>2</sub>BaAl<sub>4</sub>SiO<sub>12</sub> was formed a single cubic structure phase with an <i>Ia-</i>3<i>d</i> space group. While in the Y<sub>2</sub>BaGa<sub>4</sub>SiO<sub>12</sub> ceramics, apart from the main phase of garnet structure, a trace of peaks of SiO<sub>2</sub> were also detected. The bond valence and P–V–L chemical bond theory analysis results indicated that both of Ba cations presents a strength compressed effect in the Y<sub>2</sub>BaM<sub>4</sub>SiO<sub>12</sub> (M = Al, Ga) ceramics. And the large lattice energy of Al-O bonds might be the main reason for the Y<sub>2</sub>BaAl<sub>4</sub>SiO<sub>12</sub> formation of a stable garnet crystal structure without secondary phase and high <i>Q</i> × <i>f</i> values. The Y<sub>2</sub>BaGa<sub>4</sub>SiO<sub>12</sub> ceramics with a low relative density (91%) and microwave dielectric properties of <i>ε</i><sub><i>r</i></sub> = 12.6, <i>Q</i> × <i>f</i> = 4,530 GHz, and <i>τ</i><sub><i>f</i></sub> = − 28.6 ppm/°C. The dense Y<sub>2</sub>BaAl<sub>4</sub>SiO<sub>12</sub> ceramics (relative density of 96.2%) with microwave dielectric properties of <i>ε</i><sub><i>r</i></sub> = 10.3, <i>Q</i> × <i>f</i> = 8,700 GHz, and <i>τ</i><sub><i>f</i></sub> = − 20.3 ppm/°C was obtained at 1360 °C for 4 h. In the garnet structure, all the results demonstrates that the mismatch among the A-sites or C-sites cations will result in a low-fired temperature and severely deteriorated <i>Q</i> × <i>f</i> values.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Phase composition and microwave dielectric properties of two garnet structured Y2BaM4SiO12 (M = Al, Ga) ceramics with large size Ba cations on A-site\",\"authors\":\"Junqi Chen, Haotian Xie, Zhaohui Wang, Jingjing An, Peilin Qing, Jinwu Chen\",\"doi\":\"10.1007/s10854-025-14559-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this work, two novel Ba-contained Y<sub>2</sub>BaM<sub>4</sub>SiO<sub>12</sub> (M = Al, Ga) ceramics with garnet structured were obtained by a solid-state reaction method. XRD patterns combined with Rietveld refinement analysis demonstrated that Y<sub>2</sub>BaAl<sub>4</sub>SiO<sub>12</sub> was formed a single cubic structure phase with an <i>Ia-</i>3<i>d</i> space group. While in the Y<sub>2</sub>BaGa<sub>4</sub>SiO<sub>12</sub> ceramics, apart from the main phase of garnet structure, a trace of peaks of SiO<sub>2</sub> were also detected. The bond valence and P–V–L chemical bond theory analysis results indicated that both of Ba cations presents a strength compressed effect in the Y<sub>2</sub>BaM<sub>4</sub>SiO<sub>12</sub> (M = Al, Ga) ceramics. And the large lattice energy of Al-O bonds might be the main reason for the Y<sub>2</sub>BaAl<sub>4</sub>SiO<sub>12</sub> formation of a stable garnet crystal structure without secondary phase and high <i>Q</i> × <i>f</i> values. The Y<sub>2</sub>BaGa<sub>4</sub>SiO<sub>12</sub> ceramics with a low relative density (91%) and microwave dielectric properties of <i>ε</i><sub><i>r</i></sub> = 12.6, <i>Q</i> × <i>f</i> = 4,530 GHz, and <i>τ</i><sub><i>f</i></sub> = − 28.6 ppm/°C. The dense Y<sub>2</sub>BaAl<sub>4</sub>SiO<sub>12</sub> ceramics (relative density of 96.2%) with microwave dielectric properties of <i>ε</i><sub><i>r</i></sub> = 10.3, <i>Q</i> × <i>f</i> = 8,700 GHz, and <i>τ</i><sub><i>f</i></sub> = − 20.3 ppm/°C was obtained at 1360 °C for 4 h. In the garnet structure, all the results demonstrates that the mismatch among the A-sites or C-sites cations will result in a low-fired temperature and severely deteriorated <i>Q</i> × <i>f</i> values.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 10\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-04-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14559-8\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14559-8","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Phase composition and microwave dielectric properties of two garnet structured Y2BaM4SiO12 (M = Al, Ga) ceramics with large size Ba cations on A-site
In this work, two novel Ba-contained Y2BaM4SiO12 (M = Al, Ga) ceramics with garnet structured were obtained by a solid-state reaction method. XRD patterns combined with Rietveld refinement analysis demonstrated that Y2BaAl4SiO12 was formed a single cubic structure phase with an Ia-3d space group. While in the Y2BaGa4SiO12 ceramics, apart from the main phase of garnet structure, a trace of peaks of SiO2 were also detected. The bond valence and P–V–L chemical bond theory analysis results indicated that both of Ba cations presents a strength compressed effect in the Y2BaM4SiO12 (M = Al, Ga) ceramics. And the large lattice energy of Al-O bonds might be the main reason for the Y2BaAl4SiO12 formation of a stable garnet crystal structure without secondary phase and high Q × f values. The Y2BaGa4SiO12 ceramics with a low relative density (91%) and microwave dielectric properties of εr = 12.6, Q × f = 4,530 GHz, and τf = − 28.6 ppm/°C. The dense Y2BaAl4SiO12 ceramics (relative density of 96.2%) with microwave dielectric properties of εr = 10.3, Q × f = 8,700 GHz, and τf = − 20.3 ppm/°C was obtained at 1360 °C for 4 h. In the garnet structure, all the results demonstrates that the mismatch among the A-sites or C-sites cations will result in a low-fired temperature and severely deteriorated Q × f values.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.