Shahnaz Kossar, Asif Rasool, Rajwali Khan, R. Amiruddin, Kulsoom Koser, Aadil Ahmad Bhat
{"title":"用于电阻开关随机存取存储器（ReRAM）的掺镧铋铁氧体薄膜的研究","authors":"Shahnaz Kossar, Asif Rasool, Rajwali Khan, R. Amiruddin, Kulsoom Koser, Aadil Ahmad Bhat","doi":"10.1007/s10854-025-14639-9","DOIUrl":null,"url":null,"abstract":"<div><p>The aim of the current study is to investigate the influence of Lanthanum (La) doping on the structural, morphological, compositional, and elemental properties BiFeO<sub>3</sub> (BFO) thin films and also to determine their application toward the resistive switching memory devices. Spray pyrolysis technique was used to deposit La-doped BFO thin films onto glass substrates and the La doping concentration was varied from 1 to 8%. X-ray diffraction (XRD) analysis revealed a <i>structural phase transition from rhombohedral to monoclinic/tetragonal</i> with the increase of La doping concentration. A morphological study showed that La doping significantly improved the surface smoothness of thin films. X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxygen vacancies (VOs) and Fe<sup>2+</sup> oxidation states, highlighting the role of resistive switching behavior. Using La:BFO as an intermediate layer, the resistive switching characteristics of fabricated ITO/La(<i>x</i>)/Al (<i>X</i> = 1 to 8%) device configurations were studied; however, the ITO/La(5)/Al-based resistive switching device exhibit <i>enhanced resistive switching</i> characteristics. The underlying resistive switching (RS) mechanism of the ITO/La(5)/Al devices was attributed to the formation and rupture of conductive filaments.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigations of lanthanum-doped bismuth ferrite thin films for resistive switching random access memory (ReRAM) applications\",\"authors\":\"Shahnaz Kossar, Asif Rasool, Rajwali Khan, R. Amiruddin, Kulsoom Koser, Aadil Ahmad Bhat\",\"doi\":\"10.1007/s10854-025-14639-9\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The aim of the current study is to investigate the influence of Lanthanum (La) doping on the structural, morphological, compositional, and elemental properties BiFeO<sub>3</sub> (BFO) thin films and also to determine their application toward the resistive switching memory devices. Spray pyrolysis technique was used to deposit La-doped BFO thin films onto glass substrates and the La doping concentration was varied from 1 to 8%. X-ray diffraction (XRD) analysis revealed a <i>structural phase transition from rhombohedral to monoclinic/tetragonal</i> with the increase of La doping concentration. A morphological study showed that La doping significantly improved the surface smoothness of thin films. X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxygen vacancies (VOs) and Fe<sup>2+</sup> oxidation states, highlighting the role of resistive switching behavior. Using La:BFO as an intermediate layer, the resistive switching characteristics of fabricated ITO/La(<i>x</i>)/Al (<i>X</i> = 1 to 8%) device configurations were studied; however, the ITO/La(5)/Al-based resistive switching device exhibit <i>enhanced resistive switching</i> characteristics. The underlying resistive switching (RS) mechanism of the ITO/La(5)/Al devices was attributed to the formation and rupture of conductive filaments.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 10\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-04-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14639-9\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14639-9","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Investigations of lanthanum-doped bismuth ferrite thin films for resistive switching random access memory (ReRAM) applications
The aim of the current study is to investigate the influence of Lanthanum (La) doping on the structural, morphological, compositional, and elemental properties BiFeO3 (BFO) thin films and also to determine their application toward the resistive switching memory devices. Spray pyrolysis technique was used to deposit La-doped BFO thin films onto glass substrates and the La doping concentration was varied from 1 to 8%. X-ray diffraction (XRD) analysis revealed a structural phase transition from rhombohedral to monoclinic/tetragonal with the increase of La doping concentration. A morphological study showed that La doping significantly improved the surface smoothness of thin films. X-ray photoelectron spectroscopy (XPS) analysis shows the presence of oxygen vacancies (VOs) and Fe2+ oxidation states, highlighting the role of resistive switching behavior. Using La:BFO as an intermediate layer, the resistive switching characteristics of fabricated ITO/La(x)/Al (X = 1 to 8%) device configurations were studied; however, the ITO/La(5)/Al-based resistive switching device exhibit enhanced resistive switching characteristics. The underlying resistive switching (RS) mechanism of the ITO/La(5)/Al devices was attributed to the formation and rupture of conductive filaments.
期刊介绍：
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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