{"title":"探索锂掺杂对喷雾沉积 ZnS 薄膜光电、光学和电气性能的影响","authors":"Abdullah Alsulami, Ali Alsalme","doi":"10.1007/s10854-025-14682-6","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, ZnS and lithium-doped zinc sulfide (Li: ZnS) films were synthesized using a cost-effective spray pyrolysis technique, with lithium doping concentrations of 3, 6, and 9 wt%. X-ray diffraction (XRD) analysis confirmed that both undoped and Li-doped ZnS films exhibit a polycrystalline cubic structure. Structural characterization revealed that the crystallite size initially increased and then decreased as the Li content was raised from 3 to 9 wt%, while the strain and dislocation density followed a similar trend, first decreasing and then increasing with higher Li concentrations. Optical property analysis demonstrated that key parameters, including the refractive index, reflectance, Urbach energy, and absorption coefficient, improved significantly with increasing Li doping. Additionally, optoelectrical properties like optical conductivity, plasma frequency, and optical carrier concentration were enhanced as the Li content increased. Nonlinear optical properties also showed improvement with higher Li doping levels. Electrical measurements indicated that both electrical mobility and carrier concentration increased with Li content, whereas electrical resistivity exhibited an inverse relationship. The study highlights the potential of Li-doped ZnS films as efficient window layers for thin-film solar cells. DC conductivity analysis revealed a reduction in activation energy with increasing Li content. Furthermore, an ITO/Li:ZnS/Sb₂S₃/Au heterojunction was fabricated, and photovoltaic performance evaluation showed a notable enhancement in power conversion efficiency, increasing from 3.59% to 7.98% as the Li doping ratio was raised. These findings highlight the promising optoelectronic and photovoltaic applications of Li-doped ZnS films.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 10","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-04-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Exploring the impact of lithium doping on the optoelectrical, optical, and electrical properties of spray-deposited ZnS thin films\",\"authors\":\"Abdullah Alsulami, Ali Alsalme\",\"doi\":\"10.1007/s10854-025-14682-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this study, ZnS and lithium-doped zinc sulfide (Li: ZnS) films were synthesized using a cost-effective spray pyrolysis technique, with lithium doping concentrations of 3, 6, and 9 wt%. X-ray diffraction (XRD) analysis confirmed that both undoped and Li-doped ZnS films exhibit a polycrystalline cubic structure. Structural characterization revealed that the crystallite size initially increased and then decreased as the Li content was raised from 3 to 9 wt%, while the strain and dislocation density followed a similar trend, first decreasing and then increasing with higher Li concentrations. Optical property analysis demonstrated that key parameters, including the refractive index, reflectance, Urbach energy, and absorption coefficient, improved significantly with increasing Li doping. Additionally, optoelectrical properties like optical conductivity, plasma frequency, and optical carrier concentration were enhanced as the Li content increased. Nonlinear optical properties also showed improvement with higher Li doping levels. Electrical measurements indicated that both electrical mobility and carrier concentration increased with Li content, whereas electrical resistivity exhibited an inverse relationship. The study highlights the potential of Li-doped ZnS films as efficient window layers for thin-film solar cells. DC conductivity analysis revealed a reduction in activation energy with increasing Li content. Furthermore, an ITO/Li:ZnS/Sb₂S₃/Au heterojunction was fabricated, and photovoltaic performance evaluation showed a notable enhancement in power conversion efficiency, increasing from 3.59% to 7.98% as the Li doping ratio was raised. These findings highlight the promising optoelectronic and photovoltaic applications of Li-doped ZnS films.</p></div>\",\"PeriodicalId\":646,\"journal\":{\"name\":\"Journal of Materials Science: Materials in Electronics\",\"volume\":\"36 10\",\"pages\":\"\"},\"PeriodicalIF\":2.8000,\"publicationDate\":\"2025-04-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Materials Science: Materials in Electronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s10854-025-14682-6\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14682-6","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Exploring the impact of lithium doping on the optoelectrical, optical, and electrical properties of spray-deposited ZnS thin films
In this study, ZnS and lithium-doped zinc sulfide (Li: ZnS) films were synthesized using a cost-effective spray pyrolysis technique, with lithium doping concentrations of 3, 6, and 9 wt%. X-ray diffraction (XRD) analysis confirmed that both undoped and Li-doped ZnS films exhibit a polycrystalline cubic structure. Structural characterization revealed that the crystallite size initially increased and then decreased as the Li content was raised from 3 to 9 wt%, while the strain and dislocation density followed a similar trend, first decreasing and then increasing with higher Li concentrations. Optical property analysis demonstrated that key parameters, including the refractive index, reflectance, Urbach energy, and absorption coefficient, improved significantly with increasing Li doping. Additionally, optoelectrical properties like optical conductivity, plasma frequency, and optical carrier concentration were enhanced as the Li content increased. Nonlinear optical properties also showed improvement with higher Li doping levels. Electrical measurements indicated that both electrical mobility and carrier concentration increased with Li content, whereas electrical resistivity exhibited an inverse relationship. The study highlights the potential of Li-doped ZnS films as efficient window layers for thin-film solar cells. DC conductivity analysis revealed a reduction in activation energy with increasing Li content. Furthermore, an ITO/Li:ZnS/Sb₂S₃/Au heterojunction was fabricated, and photovoltaic performance evaluation showed a notable enhancement in power conversion efficiency, increasing from 3.59% to 7.98% as the Li doping ratio was raised. These findings highlight the promising optoelectronic and photovoltaic applications of Li-doped ZnS films.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.