通过掺杂铌提高 PZT(52/48)电陶瓷的介电和铁电特性

IF 2.8 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
A. M. Habeeb Khan, M. Prabu, Mathew Steephan, M. Saravanan, T. K. Sreeja
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摘要

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Enhancing dielectric and ferroelectric properties of PZT(52/48) electroceramics by niobium doping

Enhancing dielectric and ferroelectric properties of PZT(52/48) electroceramics by niobium doping

Finding novel materials and compositions that exhibit a close coupling between ferroelectricity and piezoelectricity is of significant technological importance. Lead zirconate titanate (PZT) is known to benefit from niobium (Nb) doping in a number of ways. In the present study, perovskite Pb(Nb0.02(Zr0.52Ti0.48)0.98O3 ceramic material was synthesized and the effect of niobium on the dielectric and ferroelectric properties are investigated. The conventional sol–gel route was used to synthesize Pb(Nb0.02(Zr0.52Ti0.48)0.98)O3 ceramics. X-ray diffraction indicates that the perovskite PNZT ceramics exhibit a tetragonal structure free of unwanted pyrochlore phase. In addition to confirming the crystal formation at higher temperatures, simultaneous TGA/DTA analyses of the gel powder reveal endothermic and exothermic peaks that correspond to weight loss at various temperatures. Grain size of the sintered samples was found to be around 300 nm with uniform dispersion, according to SEM examination. The electrical properties of the ceramics were examined as a function of temperature (from room temperature to 500 °C) and frequency (from 100 Hz to 1 MHz) using complex impedance spectroscopy (CIS). The results of the impedance spectrum show that the maximum dielectric constant at Curie temperature is ≈1800 and it reveals that the dielectric loss increases with frequency and the dielectric constant decreases. The sample’s activation energy, which was determined to be 0.167 eV, was calculated using the slope of the Arrhenius plot of DC conductivity vs the inverse of absolute temperature. The coercive electric field (Ec) and remnant polarization (Pr) of the ferroelectric loop evaluated at room temperature were determined to be 3.69 kV/cm and 1.21 μC/cm2, respectively.

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来源期刊
Journal of Materials Science: Materials in Electronics
Journal of Materials Science: Materials in Electronics 工程技术-材料科学:综合
CiteScore
5.00
自引率
7.10%
发文量
1931
审稿时长
2 months
期刊介绍: The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.
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