两步退火过程中Cu对铁基纳米晶合金结构和软磁性能的影响

IF 2.8 4区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Journal of Materials Science: Materials in Electronics Pub Date : 2025-04-02 DOI:10.1007/s10854-025-14681-7

T. X. Huang, Z. B. Song, Aditya Jain, Y. G. Wang

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引用次数: 0

摘要

铁基纳米晶合金的优异性能已得到广泛认可，但其微观结构的调控仍是一个值得关注的问题。本研究旨在保持固定的Fe含量，同时优化Fe80.5B9.5+xP8Cu1.5-xNb0.5合金(x = 0,0.4, &；采用XRD、DSC和Mössbauer光谱技术系统研究了不同Cu含量合金在两步退火过程中的组织演变及其对磁性能的影响。Mössbauer光谱结果表明，随Cu含量的变化，合金的显微组织演化受到弛豫的显著影响。此外，提出了一个模型来描述两步退火过程中不同Cu含量合金中纳米结构的演变。值得注意的是，Cu添加量为1.1 at.%的合金在两步退火后，呈现出精细的纳米结构和增强的软磁性能（Bs = 1.82 T, Hc = 5.66 a /m）。

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Role of Cu in tailoring the structure and soft magnetic performance of Fe-based nanocrystalline alloys during two-step annealing

The exceptional performance of Fe-based nanocrystalline alloys is well-recognized, however, the regulation of their microstructure remains a noteworthy concern. This study aims to maintain a fixed Fe content while optimizing the composition of the Fe_80.5B_9.5+xP₈Cu_1.5-xNb_0.5 alloys (x = 0, 0.4, & 0.8 at%) by substituting Cu with extra B. The microstructural evolution of these alloys with varying Cu content during two-step annealing and its influence on magnetic properties have been systematically investigated using XRD, DSC, and Mössbauer spectroscopy techniques. The Mössbauer spectra results reveal that the microstructural evolution of alloys with varying Cu content is significantly impacted by relaxation. Additionally, a model is proposed to describe the evolution of nanostructures in alloys with varying Cu content during two-step annealing. Notably, the alloy with an optimized Cu addition (1.1 at.%) exhibits a refined nanostructure and enhanced soft magnetic properties (B_s = 1.82 T, H_c = 5.66 A/m) after two-step annealing.

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来源期刊

Journal of Materials Science: Materials in Electronics 工程技术-材料科学：综合

CiteScore

5.00

自引率

7.10%

发文量

1931

审稿时长

2 months

期刊介绍： The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.