用积分x射线漫射研究单晶中辐照引起的位错环

IF 5.2 3区 材料科学 Q2 CHEMISTRY, MULTIDISCIPLINARY
Brandon Schwendeman, Bennett C. Larson, Michael J. Simmonds, Thomas Schwarz-Selinger, Sabine Faulhaber, Matthew J. Baldwin, George R. Tynan
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引用次数: 0

摘要

采用数值漫射散射截面计算方法,为确定辐照单晶中位错环的浓度和大小分布提供了严格的依据。{111}型位错环的微分XRDS强度作为环半径R和相对于钨中的Bragg反射的波向量q的函数进行了数值计算。结果表明,在小q处,众所周知的1/q2 Huang散射形式转变为与q < 1/R的Stokes-Wilson近似相关的1/q4依赖性。更重要的是,他们进一步证明了1/q4衰减不是小环路(R <;(网址:Å)正如人们通常认为的那样。相反,对于小到R≃5 Å且曲率较强的环,计算明确地表明,由于位错环的周长由位错核心附近的局部应变决定,在较大的q处,散射转变为1/q5衰减。利用自离子辐照钨的110反射附近的积分XRDS测量结合数值计算的积分XRDS横截面,实验证实了这种1/q5渐近形式在小环和大环中的存在。因此,对积分XRDS截面的历史两区理论处理扩展到对位错环的(第一矩)位错线长度具有直接敏感性的三区模型。这些发展使得使用数值和分析模型的横截面能够使用中等强度的实验室x射线源对位错环大小和浓度进行精确的积分XRDS测定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Integral X-ray diffuse scattering for studying irradiation-induced dislocation loops in single crystals

Integral X-ray diffuse scattering for studying irradiation-induced dislocation loops in single crystals

Numerical diffuse scattering cross-section calculations are used to establish a rigorous basis for determining the concentration and size distribution of dislocation loops in irradiated single crystals from integral X-ray diffuse scattering (XRDS) measurements. Differential XRDS intensities for prismatic {111} type dislocation loops are numerically calculated as a function of loop radius R and wavevectors q relative to Bragg reflections in tungsten. The results show the well known 1/q2 Huang scattering form at small q that transitions to a ∼1/q4 dependence associated with the Stokes–Wilson approximation for q ≳ 1/R. More importantly, they show further that the 1/q4 falloff is not the asymptotic large-q form of the diffuse scattering for small loops (R < 200 Å) as has often been assumed. Rather, for loop sizes as small as R ≃ 5 Å with strong curvature, the calculations show definitively that the scattering transitions to a robust 1/q5 falloff at larger q that arises due to the local strains near the dislocation core defining the circumference of the dislocation loops. The presence of this 1/q5 asymptotic form for both small and large loops is experimentally confirmed using an integral XRDS measurement around the 110 reflection on self-ion-irradiated tungsten combined with numerically calculated integral XRDS cross-sections. Accordingly, the historical two-region theoretical treatment of the cross-sections for integral XRDS is extended to a three-region model that has direct sensitivity to the (first-moment) dislocation line lengths of dislocation loops. These developments enable the use of both numerical and analytically modeled cross-sections to make accurate integral XRDS determinations of dislocation loop sizes and concentrations using modest-intensity laboratory X-ray sources.

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来源期刊
Journal of Applied Crystallography
Journal of Applied Crystallography CHEMISTRY, MULTIDISCIPLINARYCRYSTALLOGRAPH-CRYSTALLOGRAPHY
CiteScore
7.80
自引率
3.30%
发文量
178
期刊介绍: Many research topics in condensed matter research, materials science and the life sciences make use of crystallographic methods to study crystalline and non-crystalline matter with neutrons, X-rays and electrons. Articles published in the Journal of Applied Crystallography focus on these methods and their use in identifying structural and diffusion-controlled phase transformations, structure-property relationships, structural changes of defects, interfaces and surfaces, etc. Developments of instrumentation and crystallographic apparatus, theory and interpretation, numerical analysis and other related subjects are also covered. The journal is the primary place where crystallographic computer program information is published.
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