一种用于宽供电范围Sigma-Delta DAC的NMOS LDO输入预调节技术

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-03-27 DOI:10.1016/j.mejo.2025.106666

Xingyuan Tong, Yinbo Li, Xin Xin

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引用次数: 0

摘要

提出了一种用于宽供电范围数模转换器的NMOS低压降稳压器（LDO）。为了扩大NMOS LDO的输入电压范围，将电压预调节器和电荷泵相结合。在高压供电条件下，采用输入预稳压器来规避高压晶体管（HVT）和避免标准电压晶体管（SVT）击穿。当输入电压较低时，电荷泵提高驱动电路的供电电压，以保证NMOS功率晶体管有足够的超速电压。此外，为了减小电荷泵和参考电路输出电压波动对LDO精度的影响，还提出了一种采用负反馈技术的抑制电路。LDO采用0.18 μm BCD工艺设计，有效面积为1.14 mm2。它可以在3.3-24 V的输入电压范围内工作，具有高svt，提供高达1 a的负载电流，而静态电流仅为0.81 mA。LDO的负载和线路稳压分别为0.57 μV/mA和0.78 mV/V。

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An NMOS LDO with input pre-regulation technique for Sigma-Delta DAC with wide supply range

An NMOS low-dropout regulator (LDO) is presented for a digital-to-analog converter with wide supply range. To widen the input voltage range of the NMOS LDO, a voltage pre-regulator and a charge pump are combined. Under high-voltage supply conditions, the input pre-regulator is employed to circumvent high-voltage transistors (HVT) and to avoid standard-voltage transistors (SVT) breakdowns. When the input voltage is low, the charge pump boosts the supply voltage of the driving circuit for ensuring enough overdrive voltage of the NMOS power transistors. Besides, a suppression circuit using negative feedback technique is also proposed to reduce the effect of the output voltage fluctuations of the charge pump and reference circuits on the accuracy of the LDO. The proposed LDO is designed with 0.18 μm BCD process and occupies an active area of 1.14 mm². It can operate with an input voltage range of 3.3–24 V with highly SVTs and provide a load current of up to 1 A while the quiescent current is only 0.81 mA. The load and line regulation of the LDO are 0.57 μV/mA and 0.78 mV/V, respectively.

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.