{"title":"具有pi型负载网络的28 ghz高效j类SiGe功率放大器","authors":"Vasileios Manouras, Yannis Papananos","doi":"10.1016/j.vlsi.2025.102415","DOIUrl":null,"url":null,"abstract":"<div><div>This paper presents a 28-GHz, single-stage, Class-J Power Amplifier for potential use in mm-Wave 5G MIMO applications. A pi-type load network is proposed to provide the required fundamental and second harmonic impedance terminations for a Class-J operation mode. The PA is implemented in Infineon's 130 nm SiGe BiCMOS process achieving a saturation output power <span><math><mrow><msub><mi>P</mi><mrow><mi>s</mi><mi>a</mi><mi>t</mi></mrow></msub><mo>=</mo><mn>16.7</mn><mspace></mspace><mi>d</mi><mi>B</mi><mi>m</mi></mrow></math></span> and a remarkably high power-added efficiency <span><math><mrow><mi>P</mi><mi>A</mi><mi>E</mi><mo>=</mo><mn>42.8</mn><mspace></mspace><mo>%</mo></mrow></math></span> at 28 GHz. Moreover, the proposed PA exhibits an impressive average PAE of 17.2 % and 14.7 % respectively, while enabling 3 and 6 Gbps 64-QAM operation at an average output power of 8.09 and 7.15 dBm respectively. The in-band and out-of-band linearities, are < -26 dB and <-26.5 dBc respectively in the absence of any digital pre-distortion.</div></div>","PeriodicalId":54973,"journal":{"name":"Integration-The Vlsi Journal","volume":"103 ","pages":"Article 102415"},"PeriodicalIF":2.2000,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 28-GHz highly efficient Class-J SiGe power amplifier with pi-type load network\",\"authors\":\"Vasileios Manouras, Yannis Papananos\",\"doi\":\"10.1016/j.vlsi.2025.102415\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This paper presents a 28-GHz, single-stage, Class-J Power Amplifier for potential use in mm-Wave 5G MIMO applications. A pi-type load network is proposed to provide the required fundamental and second harmonic impedance terminations for a Class-J operation mode. The PA is implemented in Infineon's 130 nm SiGe BiCMOS process achieving a saturation output power <span><math><mrow><msub><mi>P</mi><mrow><mi>s</mi><mi>a</mi><mi>t</mi></mrow></msub><mo>=</mo><mn>16.7</mn><mspace></mspace><mi>d</mi><mi>B</mi><mi>m</mi></mrow></math></span> and a remarkably high power-added efficiency <span><math><mrow><mi>P</mi><mi>A</mi><mi>E</mi><mo>=</mo><mn>42.8</mn><mspace></mspace><mo>%</mo></mrow></math></span> at 28 GHz. Moreover, the proposed PA exhibits an impressive average PAE of 17.2 % and 14.7 % respectively, while enabling 3 and 6 Gbps 64-QAM operation at an average output power of 8.09 and 7.15 dBm respectively. The in-band and out-of-band linearities, are < -26 dB and <-26.5 dBc respectively in the absence of any digital pre-distortion.</div></div>\",\"PeriodicalId\":54973,\"journal\":{\"name\":\"Integration-The Vlsi Journal\",\"volume\":\"103 \",\"pages\":\"Article 102415\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2025-03-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Integration-The Vlsi Journal\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0167926025000720\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Integration-The Vlsi Journal","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0167926025000720","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}
A 28-GHz highly efficient Class-J SiGe power amplifier with pi-type load network
This paper presents a 28-GHz, single-stage, Class-J Power Amplifier for potential use in mm-Wave 5G MIMO applications. A pi-type load network is proposed to provide the required fundamental and second harmonic impedance terminations for a Class-J operation mode. The PA is implemented in Infineon's 130 nm SiGe BiCMOS process achieving a saturation output power and a remarkably high power-added efficiency at 28 GHz. Moreover, the proposed PA exhibits an impressive average PAE of 17.2 % and 14.7 % respectively, while enabling 3 and 6 Gbps 64-QAM operation at an average output power of 8.09 and 7.15 dBm respectively. The in-band and out-of-band linearities, are < -26 dB and <-26.5 dBc respectively in the absence of any digital pre-distortion.
期刊介绍:
Integration''s aim is to cover every aspect of the VLSI area, with an emphasis on cross-fertilization between various fields of science, and the design, verification, test and applications of integrated circuits and systems, as well as closely related topics in process and device technologies. Individual issues will feature peer-reviewed tutorials and articles as well as reviews of recent publications. The intended coverage of the journal can be assessed by examining the following (non-exclusive) list of topics:
Specification methods and languages; Analog/Digital Integrated Circuits and Systems; VLSI architectures; Algorithms, methods and tools for modeling, simulation, synthesis and verification of integrated circuits and systems of any complexity; Embedded systems; High-level synthesis for VLSI systems; Logic synthesis and finite automata; Testing, design-for-test and test generation algorithms; Physical design; Formal verification; Algorithms implemented in VLSI systems; Systems engineering; Heterogeneous systems.