具有宽电源电压和高增益的ab类轨对轨运算放大器

IF 1.9 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC
Sikai Chen, Peng Zhang, Lumiao Zhang, Zhang Zhang
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引用次数: 0

摘要

提出了一种低电压高增益的高增益轨对轨运算放大器结构。该设计结合了互补的PMOS和NMOS折叠级联编码,使用跨导线性环路偏置ab级进行推挽输出。此外,该电路支持宽输入电源电压范围,在1.8 V至5 V的输入电压范围内有效工作。该运放采用90nm BCD技术制造,核心芯片尺寸约为0.455×0.374mm2。后仿真结果表明,在1.8 V电源电压下,直流增益为123 dB,增益带宽为0.86 MHz,噪声水平为24nV/Hz@10kHz。测量结果表明,在20pF和10kΩ负载条件下,该器件的摆率为0.157V/μs,在1.8 V和5 V条件下输出电流为1 mA,功耗分别为21.77μA和25.26μA。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A class-AB rail-to-rail operational amplifier with wide supply voltage and high gain
This paper presents a high-gain rail-to-rail operational amplifier architecture, characterized by its low voltage and high gain. The design incorporates a complementary PMOS and NMOS folded cascode, using a transconductance linear loop to bias the Class-AB stage for push–pull output. Furthermore, the circuit supports a wide input power supply voltage range, operating efficiently over an input voltage span of 1.8 V to 5 V. The op-amp was fabricated using a 90 nm BCD technology, with a core chip size of approximately 0.455×0.374mm2. Post-simulation results reveal a DC gain of 123 dB, a gain bandwidth of 0.86 MHz, and a noise level of 24nV/Hz@10kHz with a 1.8 V supply voltage. Measurement outcomes demonstrate a slew rate of 0.157V/μs under loading conditions of 20pF and 10kΩ, with an output current of 1 mA and power consumption of 21.77μA and 25.26μA at 1.8 V and 5 V conditions, respectively.
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来源期刊
Microelectronics Journal
Microelectronics Journal 工程技术-工程:电子与电气
CiteScore
4.00
自引率
27.30%
发文量
222
审稿时长
43 days
期刊介绍: Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.
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