Zhan Gao , Zerong Zhang , Yanan Wang , Junsheng Cheng , Wanshuo Sun , Qiuliang Wang
{"title":"Ti掺杂对Nb3Sn超导体的影响","authors":"Zhan Gao , Zerong Zhang , Yanan Wang , Junsheng Cheng , Wanshuo Sun , Qiuliang Wang","doi":"10.1016/j.materresbull.2025.113445","DOIUrl":null,"url":null,"abstract":"<div><div>Ti doping is a common method for improving the critical current density (<em>J<sub>c</sub></em>). However, Ti is always incorporated in a designated region (Cu–Sn matrix or Nb core), ignoring the intrinsic distribution characteristic of Ti as a raw material. Moreover, the optimal doping amount of Ti was ambiguous. Therefore, in this work, the effect of Ti on the microstructures and superconducting properties of the Nb<sub>3</sub>Sn superconductor was systematically investigated using the powder metallurgy method. The results showed that Ti doping could increase the average Sn content and reduce the concentration gradient of Sn in the Nb<sub>3</sub>Sn layer. In addition, the grains of Nb<sub>3</sub>Sn were appropriately refined. On such a basis, the irreversible field (<em>B<sub>irr</sub></em>) and the pinning force density (<em>F<sub>p</sub></em>) and, thereby, the critical current density (<em>J<sub>c</sub></em>) at high magnetic fields were substantially affected by Ti doping. Specifically, the 1 at.%Ti-doped sample exhibited the best performance, and its <em>J<sub>c</sub></em> reached 2.09 × 10<sup>8</sup> A/m<sup>2</sup> at 8 T.</div></div>","PeriodicalId":18265,"journal":{"name":"Materials Research Bulletin","volume":"189 ","pages":"Article 113445"},"PeriodicalIF":5.3000,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Insights into the effect of Ti doping on Nb3Sn superconductors\",\"authors\":\"Zhan Gao , Zerong Zhang , Yanan Wang , Junsheng Cheng , Wanshuo Sun , Qiuliang Wang\",\"doi\":\"10.1016/j.materresbull.2025.113445\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Ti doping is a common method for improving the critical current density (<em>J<sub>c</sub></em>). However, Ti is always incorporated in a designated region (Cu–Sn matrix or Nb core), ignoring the intrinsic distribution characteristic of Ti as a raw material. Moreover, the optimal doping amount of Ti was ambiguous. Therefore, in this work, the effect of Ti on the microstructures and superconducting properties of the Nb<sub>3</sub>Sn superconductor was systematically investigated using the powder metallurgy method. The results showed that Ti doping could increase the average Sn content and reduce the concentration gradient of Sn in the Nb<sub>3</sub>Sn layer. In addition, the grains of Nb<sub>3</sub>Sn were appropriately refined. On such a basis, the irreversible field (<em>B<sub>irr</sub></em>) and the pinning force density (<em>F<sub>p</sub></em>) and, thereby, the critical current density (<em>J<sub>c</sub></em>) at high magnetic fields were substantially affected by Ti doping. Specifically, the 1 at.%Ti-doped sample exhibited the best performance, and its <em>J<sub>c</sub></em> reached 2.09 × 10<sup>8</sup> A/m<sup>2</sup> at 8 T.</div></div>\",\"PeriodicalId\":18265,\"journal\":{\"name\":\"Materials Research Bulletin\",\"volume\":\"189 \",\"pages\":\"Article 113445\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2025-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Research Bulletin\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0025540825001539\",\"RegionNum\":3,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Research Bulletin","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0025540825001539","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Insights into the effect of Ti doping on Nb3Sn superconductors
Ti doping is a common method for improving the critical current density (Jc). However, Ti is always incorporated in a designated region (Cu–Sn matrix or Nb core), ignoring the intrinsic distribution characteristic of Ti as a raw material. Moreover, the optimal doping amount of Ti was ambiguous. Therefore, in this work, the effect of Ti on the microstructures and superconducting properties of the Nb3Sn superconductor was systematically investigated using the powder metallurgy method. The results showed that Ti doping could increase the average Sn content and reduce the concentration gradient of Sn in the Nb3Sn layer. In addition, the grains of Nb3Sn were appropriately refined. On such a basis, the irreversible field (Birr) and the pinning force density (Fp) and, thereby, the critical current density (Jc) at high magnetic fields were substantially affected by Ti doping. Specifically, the 1 at.%Ti-doped sample exhibited the best performance, and its Jc reached 2.09 × 108 A/m2 at 8 T.
期刊介绍:
Materials Research Bulletin is an international journal reporting high-impact research on processing-structure-property relationships in functional materials and nanomaterials with interesting electronic, magnetic, optical, thermal, mechanical or catalytic properties. Papers purely on thermodynamics or theoretical calculations (e.g., density functional theory) do not fall within the scope of the journal unless they also demonstrate a clear link to physical properties. Topics covered include functional materials (e.g., dielectrics, pyroelectrics, piezoelectrics, ferroelectrics, relaxors, thermoelectrics, etc.); electrochemistry and solid-state ionics (e.g., photovoltaics, batteries, sensors, and fuel cells); nanomaterials, graphene, and nanocomposites; luminescence and photocatalysis; crystal-structure and defect-structure analysis; novel electronics; non-crystalline solids; flexible electronics; protein-material interactions; and polymeric ion-exchange membranes.