Ti掺杂对Nb3Sn超导体的影响

IF 5.3 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Zhan Gao , Zerong Zhang , Yanan Wang , Junsheng Cheng , Wanshuo Sun , Qiuliang Wang
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引用次数: 0

摘要

钛掺杂是提高临界电流密度(Jc)的常用方法。然而,Ti总是被掺入到一个指定的区域(Cu-Sn基体或Nb芯),而忽略了Ti作为原材料的固有分布特性。此外,钛的最佳掺杂量是不明确的。因此,本文采用粉末冶金方法系统地研究了Ti对Nb3Sn超导体显微组织和超导性能的影响。结果表明:Ti的掺杂可以提高Nb3Sn层中Sn的平均含量,降低Sn的浓度梯度;同时,对Nb3Sn晶粒进行了适当细化。在此基础上,高磁场下的不可逆场(Birr)和钉住力密度(Fp)以及临界电流密度(Jc)受到Ti掺杂的显著影响。具体来说,是1 at。掺ti的样品表现出最好的性能,在8 T时其Jc达到2.09 × 108 A/m2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Insights into the effect of Ti doping on Nb3Sn superconductors

Insights into the effect of Ti doping on Nb3Sn superconductors
Ti doping is a common method for improving the critical current density (Jc). However, Ti is always incorporated in a designated region (Cu–Sn matrix or Nb core), ignoring the intrinsic distribution characteristic of Ti as a raw material. Moreover, the optimal doping amount of Ti was ambiguous. Therefore, in this work, the effect of Ti on the microstructures and superconducting properties of the Nb3Sn superconductor was systematically investigated using the powder metallurgy method. The results showed that Ti doping could increase the average Sn content and reduce the concentration gradient of Sn in the Nb3Sn layer. In addition, the grains of Nb3Sn were appropriately refined. On such a basis, the irreversible field (Birr) and the pinning force density (Fp) and, thereby, the critical current density (Jc) at high magnetic fields were substantially affected by Ti doping. Specifically, the 1 at.%Ti-doped sample exhibited the best performance, and its Jc reached 2.09 × 108 A/m2 at 8 T.
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来源期刊
Materials Research Bulletin
Materials Research Bulletin 工程技术-材料科学:综合
CiteScore
9.80
自引率
5.60%
发文量
372
审稿时长
42 days
期刊介绍: Materials Research Bulletin is an international journal reporting high-impact research on processing-structure-property relationships in functional materials and nanomaterials with interesting electronic, magnetic, optical, thermal, mechanical or catalytic properties. Papers purely on thermodynamics or theoretical calculations (e.g., density functional theory) do not fall within the scope of the journal unless they also demonstrate a clear link to physical properties. Topics covered include functional materials (e.g., dielectrics, pyroelectrics, piezoelectrics, ferroelectrics, relaxors, thermoelectrics, etc.); electrochemistry and solid-state ionics (e.g., photovoltaics, batteries, sensors, and fuel cells); nanomaterials, graphene, and nanocomposites; luminescence and photocatalysis; crystal-structure and defect-structure analysis; novel electronics; non-crystalline solids; flexible electronics; protein-material interactions; and polymeric ion-exchange membranes.
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