- Book学术

发布求助

文献互助智能选刊最新文献

IF 3.5 2区物理与天体物理 Q2 PHYSICS, APPLIED

Applied Physics Letters Pub Date : 2025-03-24 DOI:10.1063/5.0258106

N. Gajowski, M. Muduli, T. J. Ronningen, S. Krishna

{"title":"Impact ionization coefficients and excess noise characteristics of Al0.85Ga0.15As0.07Sb0.93 on GaSb substrate","authors":"N. Gajowski, M. Muduli, T. J. Ronningen, S. Krishna","doi":"10.1063/5.0258106","DOIUrl":null,"url":null,"abstract":"We report the multiplication properties of Al0.85Ga0.15As0.07Sb0.93 for use in separate absorption charge and multiplication avalanche photodiode lattice matched to a GaSb substrate. The demonstration of a high gain, low excess noise multiplier lattice matched to GaSb is a critical step toward high performance avalanche photodiodes operating at wavelengths exceeding 2 μm. We have measured impact ionization coefficients of random alloy Al0.85Ga0.15As0.07Sb0.93 grown on GaSb substrates from 210 to 421 kV/cm. Our results show an α value (0.25–40×103 cm−1) significantly greater than β (0.002–4.8×103 cm−1) over the measured field range, indicating this material is a favorable multiplier candidate for electron avalanche photodiodes. We also report excess noise measurements of both p-i-n and n-i-p devices under illumination, resulting in single carrier injection. The p-i-n devices showed a low excess noise of 2.98 at a maximum gain of ∼17, while the n-i-p devices showed a high excess noise of 9.34 at a gain of ∼8, further implicating that this material predominantly multiplies electrons.","PeriodicalId":8094,"journal":{"name":"Applied Physics Letters","volume":"41 1","pages":""},"PeriodicalIF":3.5000,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Letters","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1063/5.0258106","RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}

引用次数: 0

摘要

我们报告了 Al0.85Ga0.15As0.07Sb0.93 的倍增特性，该特性可用于与 GaSb 衬底晶格匹配的独立吸收电荷和倍增雪崩光电二极管。展示与 GaSb 晶格匹配的高增益、低过量噪声乘法器是实现波长超过 2 μm 的高性能雪崩光电二极管的关键一步。我们测量了生长在 GaSb 衬底上的随机合金 Al0.85Ga0.15As0.07Sb0.93 在 210 至 421 kV/cm 范围内的冲击电离系数。我们的结果表明，在测量的磁场范围内，α 值（0.25-40×103 cm-1）明显大于 β 值（0.002-4.8×103 cm-1），这表明这种材料是电子雪崩光电二极管的理想倍增器候选材料。我们还报告了在单载流子注入的照明条件下，p-i-n 和 ni-p 器件的过量噪声测量结果。pi-n 器件在最大增益为 ∼17 时显示出 2.98 的低过量噪声，而 ni-p 器件在增益为 ∼8 时显示出 9.34 的高过量噪声，进一步表明这种材料主要用于电子倍增。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Impact ionization coefficients and excess noise characteristics of Al0.85Ga0.15As0.07Sb0.93 on GaSb substrate

We report the multiplication properties of Al0.85Ga0.15As0.07Sb0.93 for use in separate absorption charge and multiplication avalanche photodiode lattice matched to a GaSb substrate. The demonstration of a high gain, low excess noise multiplier lattice matched to GaSb is a critical step toward high performance avalanche photodiodes operating at wavelengths exceeding 2 μm. We have measured impact ionization coefficients of random alloy Al0.85Ga0.15As0.07Sb0.93 grown on GaSb substrates from 210 to 421 kV/cm. Our results show an α value (0.25–40×103 cm−1) significantly greater than β (0.002–4.8×103 cm−1) over the measured field range, indicating this material is a favorable multiplier candidate for electron avalanche photodiodes. We also report excess noise measurements of both p-i-n and n-i-p devices under illumination, resulting in single carrier injection. The p-i-n devices showed a low excess noise of 2.98 at a maximum gain of ∼17, while the n-i-p devices showed a high excess noise of 9.34 at a gain of ∼8, further implicating that this material predominantly multiplies electrons.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Applied Physics Letters 物理-物理：应用

CiteScore

6.40

自引率

10.00%

发文量

1821

审稿时长

1.6 months

期刊介绍： Applied Physics Letters (APL) features concise, up-to-date reports on significant new findings in applied physics. Emphasizing rapid dissemination of key data and new physical insights, APL offers prompt publication of new experimental and theoretical papers reporting applications of physics phenomena to all branches of science, engineering, and modern technology. In addition to regular articles, the journal also publishes invited Fast Track, Perspectives, and in-depth Editorials which report on cutting-edge areas in applied physics. APL Perspectives are forward-looking invited letters which highlight recent developments or discoveries. Emphasis is placed on very recent developments, potentially disruptive technologies, open questions and possible solutions. They also include a mini-roadmap detailing where the community should direct efforts in order for the phenomena to be viable for application and the challenges associated with meeting that performance threshold. Perspectives are characterized by personal viewpoints and opinions of recognized experts in the field. Fast Track articles are invited original research articles that report results that are particularly novel and important or provide a significant advancement in an emerging field. Because of the urgency and scientific importance of the work, the peer review process is accelerated. If, during the review process, it becomes apparent that the paper does not meet the Fast Track criterion, it is returned to a normal track.