{"title":"通过改变交换偏置方向调整Pt/IrMn/Py三层膜的自旋-轨道转矩效率","authors":"Qingtao Xia, Junda Qu, Tianren Luo, Shiyang Lu, Qiang Li, Xueying Zhang, Huaiwen Yang*, Cong Wang*, Dapeng Zhu* and Weisheng Zhao, ","doi":"10.1021/acsami.4c2228810.1021/acsami.4c22288","DOIUrl":null,"url":null,"abstract":"<p >Spin transport, as the core of spintronics, provides an alternative to electron charge transport used in conventional electronics. Recent studies have demonstrated that spin transport through antiferromagnetic (AFM) insulators would be affected by the relative orientation of the spin polarization (<b><i>s</i></b>) and the Néel vector (<b><i>n</i></b>). However, there has been limited research on this transport regime in metallic AFMs. Here, we experimentally investigated the relative direction between <b><i>s</i></b> and <b><i>n</i></b> in relation to spin transport in the Pt/IrMn/Py trilayer. Due to the exchange bias coupling at the AFM/ferromagnetic interface, <b><i>n</i></b> can be aligned along the direction of the annealing (or cooling) field. Spin-torque ferromagnetic resonance (ST-FMR) and magnetization switching measurements were performed at different directions of the cooling field. The results show that the value of spin–orbit torque (SOT) efficiency and critical switching current density depends on the relative orientation between <b><i>s</i></b> and <b><i>n</i></b>. Our results indicate that controlling <b><i>n</i></b> of the metallic AFM can be an effective method for modulating SOT efficiency in AFM-based spintronic devices.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"17 12","pages":"19062–19069 19062–19069"},"PeriodicalIF":8.2000,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Tuning the Spin–Orbit Torque Efficiency via Exchange Bias Direction Modification in Pt/IrMn/Py Trilayers\",\"authors\":\"Qingtao Xia, Junda Qu, Tianren Luo, Shiyang Lu, Qiang Li, Xueying Zhang, Huaiwen Yang*, Cong Wang*, Dapeng Zhu* and Weisheng Zhao, \",\"doi\":\"10.1021/acsami.4c2228810.1021/acsami.4c22288\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >Spin transport, as the core of spintronics, provides an alternative to electron charge transport used in conventional electronics. Recent studies have demonstrated that spin transport through antiferromagnetic (AFM) insulators would be affected by the relative orientation of the spin polarization (<b><i>s</i></b>) and the Néel vector (<b><i>n</i></b>). However, there has been limited research on this transport regime in metallic AFMs. Here, we experimentally investigated the relative direction between <b><i>s</i></b> and <b><i>n</i></b> in relation to spin transport in the Pt/IrMn/Py trilayer. Due to the exchange bias coupling at the AFM/ferromagnetic interface, <b><i>n</i></b> can be aligned along the direction of the annealing (or cooling) field. Spin-torque ferromagnetic resonance (ST-FMR) and magnetization switching measurements were performed at different directions of the cooling field. The results show that the value of spin–orbit torque (SOT) efficiency and critical switching current density depends on the relative orientation between <b><i>s</i></b> and <b><i>n</i></b>. Our results indicate that controlling <b><i>n</i></b> of the metallic AFM can be an effective method for modulating SOT efficiency in AFM-based spintronic devices.</p>\",\"PeriodicalId\":5,\"journal\":{\"name\":\"ACS Applied Materials & Interfaces\",\"volume\":\"17 12\",\"pages\":\"19062–19069 19062–19069\"},\"PeriodicalIF\":8.2000,\"publicationDate\":\"2025-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Materials & Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsami.4c22288\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsami.4c22288","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Tuning the Spin–Orbit Torque Efficiency via Exchange Bias Direction Modification in Pt/IrMn/Py Trilayers
Spin transport, as the core of spintronics, provides an alternative to electron charge transport used in conventional electronics. Recent studies have demonstrated that spin transport through antiferromagnetic (AFM) insulators would be affected by the relative orientation of the spin polarization (s) and the Néel vector (n). However, there has been limited research on this transport regime in metallic AFMs. Here, we experimentally investigated the relative direction between s and n in relation to spin transport in the Pt/IrMn/Py trilayer. Due to the exchange bias coupling at the AFM/ferromagnetic interface, n can be aligned along the direction of the annealing (or cooling) field. Spin-torque ferromagnetic resonance (ST-FMR) and magnetization switching measurements were performed at different directions of the cooling field. The results show that the value of spin–orbit torque (SOT) efficiency and critical switching current density depends on the relative orientation between s and n. Our results indicate that controlling n of the metallic AFM can be an effective method for modulating SOT efficiency in AFM-based spintronic devices.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.