基于 MOCVD 生长 (111) 面单晶 ZnGa2O4 的光谱分辨型太阳盲和可见光光电探测器

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Taslim Khan*, Nahid Chaudhary, Ray-Hua Horng and Rajendra Singh*, 
{"title":"基于 MOCVD 生长 (111) 面单晶 ZnGa2O4 的光谱分辨型太阳盲和可见光光电探测器","authors":"Taslim Khan*,&nbsp;Nahid Chaudhary,&nbsp;Ray-Hua Horng and Rajendra Singh*,&nbsp;","doi":"10.1021/acsami.4c2043910.1021/acsami.4c20439","DOIUrl":null,"url":null,"abstract":"<p >ZnGa<sub>2</sub>O<sub>4</sub> demonstrates excellent crystalline quality, establishing a heteroepitaxial relationship with the sapphire substrate and exhibiting a 6-fold harmonic symmetry corresponding to the sapphire lattice planes. Cross-sectional transmission electron microscopy analysis reveals the single-crystalline nature of ZnGa<sub>2</sub>O<sub>4</sub> films grown on a sapphire substrate using MOCVD. These findings emphasize the critical role of film uniformity in enhancing the performance metrics of unipolar Schottky photodiodes. This unipolar photodiode technique, in which asymmetric Ni/Au and Ti/Au electrodes are on MOCVD-grown single-crystalline ZnGa<sub>2</sub>O<sub>4</sub>, provides excellent rectification and high-performance solar-blind detection with a selective nature for the solar-blind and visible spectrum in reverse bias. Its exceptional forward bias operation and robust sensitivity make it excellent for sophisticated UV detection systems in harsh situations, improving security, environmental monitoring, and space applications. The photodiode works in forward bias with a rectification ratio of 1 × 10<sup>5</sup> (±6 V) for the solar-blind spectrum. The photodiode showed a Schottky behavior with an ultralow dark current of 0.2 <i>p</i>A in the forward direction and exhibited an exceptional dual-band UV–vis response with a photoresponsivity of 370 A/W and −3.6 μA/W, a notable photo-to-dark current ratio of 10, a switching speed of 50 ms, ultralow noisy detection with a noise equivalent power of 2.44 × 10<sup>–19</sup> W/Hz<sup>1/2</sup>, and an ultrahigh detectivity of 1.23 × 10<sup>17</sup> Jones observed for the solar-blind spectrum. Additionally, the unipolar photodiode showed a unique dual-mode operation: in forward bias, it exhibits positive photoconductivity (PPC) across the spectrum; in reverse bias, it detects ultraviolet light with PPC and visible light with negative photoconductivity. This unique characteristic enables selective detection with rectification ratios of 10<sup>5</sup> for UV and 74 for visible light, providing a technique for sophisticated photodetection applications that need accurate solar-blind and visible distinction.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"17 12","pages":"18559–18570 18559–18570"},"PeriodicalIF":8.2000,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spectrally Distinguished Solar-Blind and Visible Photodetector Based on MOCVD-Grown (111) Facet Single-Crystalline ZnGa2O4\",\"authors\":\"Taslim Khan*,&nbsp;Nahid Chaudhary,&nbsp;Ray-Hua Horng and Rajendra Singh*,&nbsp;\",\"doi\":\"10.1021/acsami.4c2043910.1021/acsami.4c20439\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >ZnGa<sub>2</sub>O<sub>4</sub> demonstrates excellent crystalline quality, establishing a heteroepitaxial relationship with the sapphire substrate and exhibiting a 6-fold harmonic symmetry corresponding to the sapphire lattice planes. Cross-sectional transmission electron microscopy analysis reveals the single-crystalline nature of ZnGa<sub>2</sub>O<sub>4</sub> films grown on a sapphire substrate using MOCVD. These findings emphasize the critical role of film uniformity in enhancing the performance metrics of unipolar Schottky photodiodes. This unipolar photodiode technique, in which asymmetric Ni/Au and Ti/Au electrodes are on MOCVD-grown single-crystalline ZnGa<sub>2</sub>O<sub>4</sub>, provides excellent rectification and high-performance solar-blind detection with a selective nature for the solar-blind and visible spectrum in reverse bias. Its exceptional forward bias operation and robust sensitivity make it excellent for sophisticated UV detection systems in harsh situations, improving security, environmental monitoring, and space applications. The photodiode works in forward bias with a rectification ratio of 1 × 10<sup>5</sup> (±6 V) for the solar-blind spectrum. The photodiode showed a Schottky behavior with an ultralow dark current of 0.2 <i>p</i>A in the forward direction and exhibited an exceptional dual-band UV–vis response with a photoresponsivity of 370 A/W and −3.6 μA/W, a notable photo-to-dark current ratio of 10, a switching speed of 50 ms, ultralow noisy detection with a noise equivalent power of 2.44 × 10<sup>–19</sup> W/Hz<sup>1/2</sup>, and an ultrahigh detectivity of 1.23 × 10<sup>17</sup> Jones observed for the solar-blind spectrum. Additionally, the unipolar photodiode showed a unique dual-mode operation: in forward bias, it exhibits positive photoconductivity (PPC) across the spectrum; in reverse bias, it detects ultraviolet light with PPC and visible light with negative photoconductivity. This unique characteristic enables selective detection with rectification ratios of 10<sup>5</sup> for UV and 74 for visible light, providing a technique for sophisticated photodetection applications that need accurate solar-blind and visible distinction.</p>\",\"PeriodicalId\":5,\"journal\":{\"name\":\"ACS Applied Materials & Interfaces\",\"volume\":\"17 12\",\"pages\":\"18559–18570 18559–18570\"},\"PeriodicalIF\":8.2000,\"publicationDate\":\"2025-03-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Materials & Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsami.4c20439\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsami.4c20439","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

摘要

ZnGa2O4表现出优异的晶体质量,与蓝宝石衬底建立了异质外延关系,并表现出与蓝宝石晶格面相对应的6倍谐波对称。横断面透射电镜分析揭示了MOCVD在蓝宝石衬底上生长的ZnGa2O4薄膜的单晶性质。这些发现强调了薄膜均匀性在提高单极肖特基光电二极管性能指标中的关键作用。这种单极光电二极管技术将不对称的Ni/Au和Ti/Au电极置于mocvd生长的单晶ZnGa2O4上,提供了出色的整流和高性能的太阳盲检测,具有对太阳盲和可见光谱的选择性。其卓越的前向偏置操作和强大的灵敏度使其非常适合恶劣情况下的复杂紫外线检测系统,提高安全性,环境监测和空间应用。光电二极管工作在正偏压下,整流比为1 × 105(±6 V),用于太阳盲光谱。该光电二极管具有肖特基特性,向前方向的超低暗电流为0.2 pA,具有优异的双波段紫外-可见响应,光响应率分别为370 a /W和−3.6 μA/W,光暗电流比为10,开关速度为50 ms,噪声等效功率为2.44 × 10 - 19 W/Hz1/2,探测噪声等效功率为1.23 × 1017 Jones。此外,单极光电二极管表现出独特的双模式工作:在正向偏压下,它在整个光谱中表现出正的光电导率(PPC);在反向偏压下,它检测具有PPC的紫外光和具有负光导电性的可见光。这种独特的特性使选择性检测具有105的UV整流比和74的可见光整流比,为需要精确的日盲和可见光区分的复杂光探测应用提供了一种技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Spectrally Distinguished Solar-Blind and Visible Photodetector Based on MOCVD-Grown (111) Facet Single-Crystalline ZnGa2O4

Spectrally Distinguished Solar-Blind and Visible Photodetector Based on MOCVD-Grown (111) Facet Single-Crystalline ZnGa2O4

ZnGa2O4 demonstrates excellent crystalline quality, establishing a heteroepitaxial relationship with the sapphire substrate and exhibiting a 6-fold harmonic symmetry corresponding to the sapphire lattice planes. Cross-sectional transmission electron microscopy analysis reveals the single-crystalline nature of ZnGa2O4 films grown on a sapphire substrate using MOCVD. These findings emphasize the critical role of film uniformity in enhancing the performance metrics of unipolar Schottky photodiodes. This unipolar photodiode technique, in which asymmetric Ni/Au and Ti/Au electrodes are on MOCVD-grown single-crystalline ZnGa2O4, provides excellent rectification and high-performance solar-blind detection with a selective nature for the solar-blind and visible spectrum in reverse bias. Its exceptional forward bias operation and robust sensitivity make it excellent for sophisticated UV detection systems in harsh situations, improving security, environmental monitoring, and space applications. The photodiode works in forward bias with a rectification ratio of 1 × 105 (±6 V) for the solar-blind spectrum. The photodiode showed a Schottky behavior with an ultralow dark current of 0.2 pA in the forward direction and exhibited an exceptional dual-band UV–vis response with a photoresponsivity of 370 A/W and −3.6 μA/W, a notable photo-to-dark current ratio of 10, a switching speed of 50 ms, ultralow noisy detection with a noise equivalent power of 2.44 × 10–19 W/Hz1/2, and an ultrahigh detectivity of 1.23 × 1017 Jones observed for the solar-blind spectrum. Additionally, the unipolar photodiode showed a unique dual-mode operation: in forward bias, it exhibits positive photoconductivity (PPC) across the spectrum; in reverse bias, it detects ultraviolet light with PPC and visible light with negative photoconductivity. This unique characteristic enables selective detection with rectification ratios of 105 for UV and 74 for visible light, providing a technique for sophisticated photodetection applications that need accurate solar-blind and visible distinction.

求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信