Taslim Khan*, Nahid Chaudhary, Ray-Hua Horng and Rajendra Singh*,
{"title":"基于 MOCVD 生长 (111) 面单晶 ZnGa2O4 的光谱分辨型太阳盲和可见光光电探测器","authors":"Taslim Khan*, Nahid Chaudhary, Ray-Hua Horng and Rajendra Singh*, ","doi":"10.1021/acsami.4c2043910.1021/acsami.4c20439","DOIUrl":null,"url":null,"abstract":"<p >ZnGa<sub>2</sub>O<sub>4</sub> demonstrates excellent crystalline quality, establishing a heteroepitaxial relationship with the sapphire substrate and exhibiting a 6-fold harmonic symmetry corresponding to the sapphire lattice planes. Cross-sectional transmission electron microscopy analysis reveals the single-crystalline nature of ZnGa<sub>2</sub>O<sub>4</sub> films grown on a sapphire substrate using MOCVD. These findings emphasize the critical role of film uniformity in enhancing the performance metrics of unipolar Schottky photodiodes. This unipolar photodiode technique, in which asymmetric Ni/Au and Ti/Au electrodes are on MOCVD-grown single-crystalline ZnGa<sub>2</sub>O<sub>4</sub>, provides excellent rectification and high-performance solar-blind detection with a selective nature for the solar-blind and visible spectrum in reverse bias. Its exceptional forward bias operation and robust sensitivity make it excellent for sophisticated UV detection systems in harsh situations, improving security, environmental monitoring, and space applications. The photodiode works in forward bias with a rectification ratio of 1 × 10<sup>5</sup> (±6 V) for the solar-blind spectrum. The photodiode showed a Schottky behavior with an ultralow dark current of 0.2 <i>p</i>A in the forward direction and exhibited an exceptional dual-band UV–vis response with a photoresponsivity of 370 A/W and −3.6 μA/W, a notable photo-to-dark current ratio of 10, a switching speed of 50 ms, ultralow noisy detection with a noise equivalent power of 2.44 × 10<sup>–19</sup> W/Hz<sup>1/2</sup>, and an ultrahigh detectivity of 1.23 × 10<sup>17</sup> Jones observed for the solar-blind spectrum. Additionally, the unipolar photodiode showed a unique dual-mode operation: in forward bias, it exhibits positive photoconductivity (PPC) across the spectrum; in reverse bias, it detects ultraviolet light with PPC and visible light with negative photoconductivity. This unique characteristic enables selective detection with rectification ratios of 10<sup>5</sup> for UV and 74 for visible light, providing a technique for sophisticated photodetection applications that need accurate solar-blind and visible distinction.</p>","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"17 12","pages":"18559–18570 18559–18570"},"PeriodicalIF":8.2000,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Spectrally Distinguished Solar-Blind and Visible Photodetector Based on MOCVD-Grown (111) Facet Single-Crystalline ZnGa2O4\",\"authors\":\"Taslim Khan*, Nahid Chaudhary, Ray-Hua Horng and Rajendra Singh*, \",\"doi\":\"10.1021/acsami.4c2043910.1021/acsami.4c20439\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >ZnGa<sub>2</sub>O<sub>4</sub> demonstrates excellent crystalline quality, establishing a heteroepitaxial relationship with the sapphire substrate and exhibiting a 6-fold harmonic symmetry corresponding to the sapphire lattice planes. Cross-sectional transmission electron microscopy analysis reveals the single-crystalline nature of ZnGa<sub>2</sub>O<sub>4</sub> films grown on a sapphire substrate using MOCVD. These findings emphasize the critical role of film uniformity in enhancing the performance metrics of unipolar Schottky photodiodes. This unipolar photodiode technique, in which asymmetric Ni/Au and Ti/Au electrodes are on MOCVD-grown single-crystalline ZnGa<sub>2</sub>O<sub>4</sub>, provides excellent rectification and high-performance solar-blind detection with a selective nature for the solar-blind and visible spectrum in reverse bias. Its exceptional forward bias operation and robust sensitivity make it excellent for sophisticated UV detection systems in harsh situations, improving security, environmental monitoring, and space applications. The photodiode works in forward bias with a rectification ratio of 1 × 10<sup>5</sup> (±6 V) for the solar-blind spectrum. The photodiode showed a Schottky behavior with an ultralow dark current of 0.2 <i>p</i>A in the forward direction and exhibited an exceptional dual-band UV–vis response with a photoresponsivity of 370 A/W and −3.6 μA/W, a notable photo-to-dark current ratio of 10, a switching speed of 50 ms, ultralow noisy detection with a noise equivalent power of 2.44 × 10<sup>–19</sup> W/Hz<sup>1/2</sup>, and an ultrahigh detectivity of 1.23 × 10<sup>17</sup> Jones observed for the solar-blind spectrum. Additionally, the unipolar photodiode showed a unique dual-mode operation: in forward bias, it exhibits positive photoconductivity (PPC) across the spectrum; in reverse bias, it detects ultraviolet light with PPC and visible light with negative photoconductivity. This unique characteristic enables selective detection with rectification ratios of 10<sup>5</sup> for UV and 74 for visible light, providing a technique for sophisticated photodetection applications that need accurate solar-blind and visible distinction.</p>\",\"PeriodicalId\":5,\"journal\":{\"name\":\"ACS Applied Materials & Interfaces\",\"volume\":\"17 12\",\"pages\":\"18559–18570 18559–18570\"},\"PeriodicalIF\":8.2000,\"publicationDate\":\"2025-03-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ACS Applied Materials & Interfaces\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://pubs.acs.org/doi/10.1021/acsami.4c20439\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsami.4c20439","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Spectrally Distinguished Solar-Blind and Visible Photodetector Based on MOCVD-Grown (111) Facet Single-Crystalline ZnGa2O4
ZnGa2O4 demonstrates excellent crystalline quality, establishing a heteroepitaxial relationship with the sapphire substrate and exhibiting a 6-fold harmonic symmetry corresponding to the sapphire lattice planes. Cross-sectional transmission electron microscopy analysis reveals the single-crystalline nature of ZnGa2O4 films grown on a sapphire substrate using MOCVD. These findings emphasize the critical role of film uniformity in enhancing the performance metrics of unipolar Schottky photodiodes. This unipolar photodiode technique, in which asymmetric Ni/Au and Ti/Au electrodes are on MOCVD-grown single-crystalline ZnGa2O4, provides excellent rectification and high-performance solar-blind detection with a selective nature for the solar-blind and visible spectrum in reverse bias. Its exceptional forward bias operation and robust sensitivity make it excellent for sophisticated UV detection systems in harsh situations, improving security, environmental monitoring, and space applications. The photodiode works in forward bias with a rectification ratio of 1 × 105 (±6 V) for the solar-blind spectrum. The photodiode showed a Schottky behavior with an ultralow dark current of 0.2 pA in the forward direction and exhibited an exceptional dual-band UV–vis response with a photoresponsivity of 370 A/W and −3.6 μA/W, a notable photo-to-dark current ratio of 10, a switching speed of 50 ms, ultralow noisy detection with a noise equivalent power of 2.44 × 10–19 W/Hz1/2, and an ultrahigh detectivity of 1.23 × 1017 Jones observed for the solar-blind spectrum. Additionally, the unipolar photodiode showed a unique dual-mode operation: in forward bias, it exhibits positive photoconductivity (PPC) across the spectrum; in reverse bias, it detects ultraviolet light with PPC and visible light with negative photoconductivity. This unique characteristic enables selective detection with rectification ratios of 105 for UV and 74 for visible light, providing a technique for sophisticated photodetection applications that need accurate solar-blind and visible distinction.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.