退火GaAsBi/AlAs多量子阱结构中尺寸控制Bi量子点的原位透射电镜研究。

IF 4.3 3区化学 Q2 CHEMISTRY, MULTIDISCIPLINARY

ACS Omega Pub Date : 2025-03-06 eCollection Date: 2025-03-18 DOI:10.1021/acsomega.4c10631

Martynas Skapas, Esperanza Luna, Sandra Stanionytė, Karl Graser, Renata Butkutė

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引用次数: 0

摘要

本文采用原位透射电子显微镜研究了退火GaAsBi/AlAs多量子阱（MQW）结构中Bi量子点（QD）的形成。所研究的结构包含两个GaAsBi qw并嵌入AlGaAs抛物量子势垒（PQB）中，在半绝缘GaAs（100）上生长，并转移到原位加热支架（DENS溶液）上并加热到650°C。在亮场STEM模式下，原位连续记录样品的演化过程。分析表明，在原位加热的情况下，片层在较低的退火温度下可以形成量子点。此外，我们发现原位TEM实验中铋量子点形成的机制与体外原位退火不同。对原位退火和非原位退火结构进行了比较，并对原位退火后的结构进行了TEM分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In Situ TEM Study of Size-Controlled Bi Quantum Dots in an Annealed GaAsBi/AlAs Multiple Quantum Well Structure.

An in situ transmission electron microscopy study of Bi quantum dot (QD) formation in an annealed GaAsBi/AlAs multiple quantum well (MQW) structure is presented in this work. The investigated structure, containing two GaAsBi QWs and embedded in an AlGaAs parabolic quantum barrier (PQB), was grown on semi-insulating GaAs (100) and was transferred onto an in situ heating holder (DENS solutions) and heated up to 650 °C. Sample evolution was continuously recorded in situ in bright-field STEM mode. The analysis revealed that QD formation occurs at lower annealing temperatures in case of in situ heating of lamella than in bulk. In addition, we find that the mechanism governing Bi QD formation is different in the in situ TEM experiment compared to bulk ex-situ annealing. Comparison of the ex-situ and in situ annealed structures, as well as in-depth postannealed structure TEM analysis, is presented.

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来源期刊

ACS Omega Chemical Engineering-General Chemical Engineering

CiteScore

6.60

自引率

4.90%

发文量

3945

审稿时长

2.4 months

期刊介绍： ACS Omega is an open-access global publication for scientific articles that describe new findings in chemistry and interfacing areas of science, without any perceived evaluation of immediate impact.