Correction to “Hydrogenation Strategy for Al2O3/MoOx Passivating Contact in High-Efficiency Crystalline Silicon Solar Cells”

Yuner Luo, Yanhao Wang, Siyi Liu, Shaojuan Bao, Jilei Wang, Shan-Ting Zhang, Li Tian, Shihua Huang, Dongdong Li (2024). Hydrogenation strategy for Al₂O₃/MoO_x passivating contact in High-Efficiency Crystalline Silicon Solar Cells, Solar RRL, https://doi.org/10.1002/solr.202400740

In paragraph 3 of the “Results and Discussion” section, the text “The Q_f value for H*-Al₂O₃ films was −4.74 × 10¹² cm⁻², higher than the values for H-Al₂O₃ (−4.63 × 10¹²cm⁻²), Al₂O₃ (−4.5 × 10¹²cm⁻²), and H*-Al₂O₃ (O₃) (−4.41 × 10¹²cm⁻²).” was incorrect. This should have read: “The Q_f value for H*-Al₂O₃ films was −2.45 × 10¹⁰cm⁻², higher than the values for H-Al₂O₃ (−1.64 × 10¹⁰cm⁻²), Al₂O₃ (−1.08 × 10¹⁰cm⁻²), and H*-Al₂O₃ (O₃) (−9.6 × 10⁹cm⁻²).”

In Note S1 of “Supporting Information”, the text “From formula 1, we can obtain the Q_f of Al₂O₃ which equals to −4.5 × 10¹²cm⁻² based on the V_fb = 1.21 V and the oxide capacitance C_ox = 7.47 × 10⁻¹²F. The Q_f of H-Al₂O₃ film calculated from the V_fb = 1.32 V and the oxide capacitance C_ox = 7.3 × 10⁻¹²F is −4.63 × 10¹²cm⁻². The Q_f of H*-Al₂O₃ film calculated from the V_fb = 1.18 V and the oxide capacitance C_ox = 7.98 × 10⁻¹² F is −4.74 × 10¹² cm⁻². And the Q_f of H*-Al₂O₃ (O₃) film calculated from the V_fb = 1.31 V and the oxide capacitance C_ox = 6.98 × 10⁻¹² F is −4.41 × 10¹²cm⁻²” was incorrect. This should have read: “From formula 1, we can obtain the Q_f of Al₂O₃ which equals to −1.08 × 10¹⁰cm⁻² based on the V_fb = −0.6 V and the oxide capacitance C_ox = 2.58 × 10⁻¹¹ F. The Q_f of H-Al₂O₃ film calculated from the V_fb = −0.63 V and the oxide capacitance C_ox = 2.89 × 10⁻¹¹ F is −1.64 × 10¹⁰ cm⁻². The Q_f of H*-Al₂O₃ film calculated from the V_fb = 0.63 V and the oxide capacitance C_ox = 3 × 10⁻¹¹ F is −2.45 × 10¹⁰ cm⁻². And the Q_f of H*-Al₂O₃ (O₃) film calculated from the V_fb = −0.57 V and the oxide capacitance C_ox = 2.81 × 10⁻¹¹ F is −9.6 × 10⁹ cm⁻².”

The authors also admitted to an image compilation error in Figure 2b and were able to provide the original image. The erroneous C–V curves on the p-Si MOS structure in our manuscript were due to an incorrect polarity connection, which also caused an erroneous extraction of the flat-band voltage. The authors confirm that all the experimental results and corresponding conclusions mentioned in the paper remain unaffected. The corrected Figure 2b is shown as follows.

Corrected Figure 2b

The authors apologize for this error.