N. I. Boikov, O. A. Chuvenkova, E. V. Parinova, S. I. Kurganskii, A. A. Makarova, D. A. Smirnov, R. G. Chumakov, A. M. Lebedev, S. S. Titova, E. A. Suprun, E. Yu. Gerasimov, S. Yu. Turishchev
{"title":"超薄锡/硅外延层真空退火过程中的氧转移","authors":"N. I. Boikov, O. A. Chuvenkova, E. V. Parinova, S. I. Kurganskii, A. A. Makarova, D. A. Smirnov, R. G. Chumakov, A. M. Lebedev, S. S. Titova, E. A. Suprun, E. Yu. Gerasimov, S. Yu. Turishchev","doi":"10.1134/S2635167625600130","DOIUrl":null,"url":null,"abstract":"<p>The features of the morphology and physical–chemical state of five epitaxially formed monolayers of tin at the interface with a thin silicon buffer layer on a silicon substrate and transformation of the epitaxial structure as a result of in situ thermal annealing from the point of view of the charge state of silicon atoms are studied. X-ray photoelectron spectroscopy using synchrotron radiation and scanning electron microscopy are used. The possibility of oxygen atom transport to the silicon buffer layer during storage of the structures in laboratory conditions is shown. Annealing in ultrahigh vacuum causes a restructuring of the surface of such structures, which is accompanied by oxygen atom redistribution to the exposed surface of the epitaxial silicon buffer with the formation of a thin SiO<sub>2</sub> layer and the assembly of tin into clusters on this surface.</p>","PeriodicalId":716,"journal":{"name":"Nanotechnologies in Russia","volume":"19 1 supplement","pages":"S93 - S97"},"PeriodicalIF":0.8000,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Oxygen Transfer during the Vacuum Annealing of an Ultrathin Sn/Si Epitaxial Layer\",\"authors\":\"N. I. Boikov, O. A. Chuvenkova, E. V. Parinova, S. I. Kurganskii, A. A. Makarova, D. A. Smirnov, R. G. Chumakov, A. M. Lebedev, S. S. Titova, E. A. Suprun, E. Yu. Gerasimov, S. Yu. Turishchev\",\"doi\":\"10.1134/S2635167625600130\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>The features of the morphology and physical–chemical state of five epitaxially formed monolayers of tin at the interface with a thin silicon buffer layer on a silicon substrate and transformation of the epitaxial structure as a result of in situ thermal annealing from the point of view of the charge state of silicon atoms are studied. X-ray photoelectron spectroscopy using synchrotron radiation and scanning electron microscopy are used. The possibility of oxygen atom transport to the silicon buffer layer during storage of the structures in laboratory conditions is shown. Annealing in ultrahigh vacuum causes a restructuring of the surface of such structures, which is accompanied by oxygen atom redistribution to the exposed surface of the epitaxial silicon buffer with the formation of a thin SiO<sub>2</sub> layer and the assembly of tin into clusters on this surface.</p>\",\"PeriodicalId\":716,\"journal\":{\"name\":\"Nanotechnologies in Russia\",\"volume\":\"19 1 supplement\",\"pages\":\"S93 - S97\"},\"PeriodicalIF\":0.8000,\"publicationDate\":\"2025-03-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanotechnologies in Russia\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://link.springer.com/article/10.1134/S2635167625600130\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Engineering\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanotechnologies in Russia","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S2635167625600130","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Engineering","Score":null,"Total":0}
Oxygen Transfer during the Vacuum Annealing of an Ultrathin Sn/Si Epitaxial Layer
The features of the morphology and physical–chemical state of five epitaxially formed monolayers of tin at the interface with a thin silicon buffer layer on a silicon substrate and transformation of the epitaxial structure as a result of in situ thermal annealing from the point of view of the charge state of silicon atoms are studied. X-ray photoelectron spectroscopy using synchrotron radiation and scanning electron microscopy are used. The possibility of oxygen atom transport to the silicon buffer layer during storage of the structures in laboratory conditions is shown. Annealing in ultrahigh vacuum causes a restructuring of the surface of such structures, which is accompanied by oxygen atom redistribution to the exposed surface of the epitaxial silicon buffer with the formation of a thin SiO2 layer and the assembly of tin into clusters on this surface.
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Nanobiotechnology Reports publishes interdisciplinary research articles on fundamental aspects of the structure and properties of nanoscale objects and nanomaterials, polymeric and bioorganic molecules, and supramolecular and biohybrid complexes, as well as articles that discuss technologies for their preparation and processing, and practical implementation of products, devices, and nature-like systems based on them. The journal publishes original articles and reviews that meet the highest scientific quality standards in the following areas of science and technology studies: self-organizing structures and nanoassemblies; nanostructures, including nanotubes; functional and structural nanomaterials; polymeric, bioorganic, and hybrid nanomaterials; devices and products based on nanomaterials and nanotechnology; nanobiology and genetics, and omics technologies; nanobiomedicine and nanopharmaceutics; nanoelectronics and neuromorphic computing systems; neurocognitive systems and technologies; nanophotonics; natural science methods in a study of cultural heritage items; metrology, standardization, and monitoring in nanotechnology.
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