{"title":"神经形态应用中氧化铪铁电隧道结的形成气体退火缺陷钝化","authors":"Manh-Cuong Nguyen, Kyung Kyu Min, Wonjun Shin, Jiyong Yim, Rino Choi, Daewoong Kwon","doi":"10.1186/s40580-025-00481-6","DOIUrl":null,"url":null,"abstract":"<div><p>Forming gas annealing (FGA) is applied to HfO<sub>x</sub> ferroelectric tunnel junction (FTJ) synaptic devices to passivate defects and reduce trap-assisted-tunneling (TAT). Without FGA, TAT caused by defects in metal–ferroelectric–insulator–semiconductor (MFIS) FTJ stack dominates the conduction mechanism in FTJs and results in no memory window (MW). The reduction of defects or TAT after FGA reveals the effect of polarization switching on the FTJ performance. Consequently, linear/symmetric potentiation and depression (P/D) characteristics of FTJ after FGA with stable repeatability are obtained. Owing to the FGA-induced linearity and symmetricity of P/D, a learning accuracy of approximately 90% is achieved via pattern recognition simulations utilizing HfO<sub>x</sub> FTJ crossbar.</p><h3>Graphical Abstract</h3>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":712,"journal":{"name":"Nano Convergence","volume":"12 1","pages":""},"PeriodicalIF":13.4000,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00481-6","citationCount":"0","resultStr":"{\"title\":\"Defect passivation of hafnium oxide ferroelectric tunnel junction using forming gas annealing for neuromorphic applications\",\"authors\":\"Manh-Cuong Nguyen, Kyung Kyu Min, Wonjun Shin, Jiyong Yim, Rino Choi, Daewoong Kwon\",\"doi\":\"10.1186/s40580-025-00481-6\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Forming gas annealing (FGA) is applied to HfO<sub>x</sub> ferroelectric tunnel junction (FTJ) synaptic devices to passivate defects and reduce trap-assisted-tunneling (TAT). Without FGA, TAT caused by defects in metal–ferroelectric–insulator–semiconductor (MFIS) FTJ stack dominates the conduction mechanism in FTJs and results in no memory window (MW). The reduction of defects or TAT after FGA reveals the effect of polarization switching on the FTJ performance. Consequently, linear/symmetric potentiation and depression (P/D) characteristics of FTJ after FGA with stable repeatability are obtained. Owing to the FGA-induced linearity and symmetricity of P/D, a learning accuracy of approximately 90% is achieved via pattern recognition simulations utilizing HfO<sub>x</sub> FTJ crossbar.</p><h3>Graphical Abstract</h3>\\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>\",\"PeriodicalId\":712,\"journal\":{\"name\":\"Nano Convergence\",\"volume\":\"12 1\",\"pages\":\"\"},\"PeriodicalIF\":13.4000,\"publicationDate\":\"2025-03-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://nanoconvergencejournal.springeropen.com/counter/pdf/10.1186/s40580-025-00481-6\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nano Convergence\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://link.springer.com/article/10.1186/s40580-025-00481-6\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano Convergence","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1186/s40580-025-00481-6","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
Defect passivation of hafnium oxide ferroelectric tunnel junction using forming gas annealing for neuromorphic applications
Forming gas annealing (FGA) is applied to HfOx ferroelectric tunnel junction (FTJ) synaptic devices to passivate defects and reduce trap-assisted-tunneling (TAT). Without FGA, TAT caused by defects in metal–ferroelectric–insulator–semiconductor (MFIS) FTJ stack dominates the conduction mechanism in FTJs and results in no memory window (MW). The reduction of defects or TAT after FGA reveals the effect of polarization switching on the FTJ performance. Consequently, linear/symmetric potentiation and depression (P/D) characteristics of FTJ after FGA with stable repeatability are obtained. Owing to the FGA-induced linearity and symmetricity of P/D, a learning accuracy of approximately 90% is achieved via pattern recognition simulations utilizing HfOx FTJ crossbar.
期刊介绍：
Nano Convergence is an internationally recognized, peer-reviewed, and interdisciplinary journal designed to foster effective communication among scientists spanning diverse research areas closely aligned with nanoscience and nanotechnology. Dedicated to encouraging the convergence of technologies across the nano- to microscopic scale, the journal aims to unveil novel scientific domains and cultivate fresh research prospects.
Operating on a single-blind peer-review system, Nano Convergence ensures transparency in the review process, with reviewers cognizant of authors' names and affiliations while maintaining anonymity in the feedback provided to authors.
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