基于PSSP混合反馈电阻的17.95 mHz高通角pvt不敏感仪表放大器

IF 1.9 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Journal Pub Date : 2025-03-18 DOI:10.1016/j.mejo.2025.106640

Hao Xu, Shilong Chen, Lu Liu, Guangyin Shi, Tianke Li, Zhiqiang Li, Jun Zhang, Haiying Zhang

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引用次数: 0

摘要

本文提出了一种用于生理信号领域的电容耦合仪表放大器（IA），所提出的混合电阻器实现了其反馈电阻。它允许电容耦合IA实现太欧姆（TΩ）反馈电阻，并且对工艺，电压和温度（PVT）变化具有鲁棒性。这种混合反馈电阻和电容耦合IA的反馈电容形成一个低通滤波器滤除不需要的尖峰信号。电容耦合IA在130 nm标准CMOS工艺中实现。仿真结果表明，所提出的电容耦合IA可实现17.95 mHz的高通角和36.69 dB的增益。不同PVT条件下电容耦合IA的高通角最大值与最小值之差仅为0.014 Hz。其高通转角变化率绝对值的最大值为0.30。所提出的电容耦合IA可实现72.6 dB的信噪比和失真比。

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A PVT-Insensitive instrumentation amplifier with 17.95 mHz high-pass corner based on a PSSP hybrid feedback resistor

This work presents a capacitively coupled instrumentation amplifier (IA) for applications in the field of physiological signals, and the proposed hybrid resistor realizes its feedback resistance. It allows the capacitively coupled IA to achieve Tera-ohm (T

Ω

) feedback resistance and be robust to process, voltage, and temperature (PVT) variations. This hybrid feedback resistor and feedback capacitor of the capacitively coupled IA form a low-pass filter to filter out undesired spike signals. The capacitively coupled IA was implemented in a 130 nm standard CMOS process. The simulation results show that the proposed capacitively coupled IA can realize a high-pass corner of 17.95 mHz and a gain of 36.69 dB. The difference between the maximum and minimum values of the high-pass corner of the capacitively coupled IA under different PVT conditions is only 0.014 Hz. The maximum value of the absolute value of its high-pass corner change rate is 0.30. The proposed capacitively coupled IA can realize a 72.6 dB signal-to-noise and distortion ratio (SNDR).

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来源期刊

Microelectronics Journal 工程技术-工程：电子与电气

CiteScore

4.00

自引率

27.30%

发文量

222

审稿时长

43 days

期刊介绍： Published since 1969, the Microelectronics Journal is an international forum for the dissemination of research and applications of microelectronic systems, circuits, and emerging technologies. Papers published in the Microelectronics Journal have undergone peer review to ensure originality, relevance, and timeliness. The journal thus provides a worldwide, regular, and comprehensive update on microelectronic circuits and systems. The Microelectronics Journal invites papers describing significant research and applications in all of the areas listed below. Comprehensive review/survey papers covering recent developments will also be considered. The Microelectronics Journal covers circuits and systems. This topic includes but is not limited to: Analog, digital, mixed, and RF circuits and related design methodologies; Logic, architectural, and system level synthesis; Testing, design for testability, built-in self-test; Area, power, and thermal analysis and design; Mixed-domain simulation and design; Embedded systems; Non-von Neumann computing and related technologies and circuits; Design and test of high complexity systems integration; SoC, NoC, SIP, and NIP design and test; 3-D integration design and analysis; Emerging device technologies and circuits, such as FinFETs, SETs, spintronics, SFQ, MTJ, etc. Application aspects such as signal and image processing including circuits for cryptography, sensors, and actuators including sensor networks, reliability and quality issues, and economic models are also welcome.