电磁辐射下一种新的局部有源忆阻autapase耦合Hopfield神经网络

IF 2.2 3区 工程技术 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE
Qiuzhen Wan , Simiao Chen , Tieqiao Liu , Haixiang Lan , Kun Shen
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引用次数: 0

摘要

本文通过引入一种新的局部有源忆阻器作为神经网络的连接节点,建立了复杂电磁环境下的忆阻Hopfield神经网络(HNN)模型,其中电磁辐射的影响用二次非线性忆阻器来描述。本文提出的局部有源忆阻器的非易失性和局部有源特性分别由断电曲线和直流V-I图来证明。通过理论分析和数值分析对记忆HNN模型进行了详细的研究,同时考虑了连接权和电磁辐射。与其他神经网络相比,在选取适当的系统参数时,所提出的记忆HNN模型具有丰富的动态特性,包括稳定点、周期吸引子、混沌吸引子、周期倍分岔、混沌危机、共存多吸引子等。通过在PSIM上的模拟电路和FPGA上的数字硬件平台的实现,验证了记忆HNN模型的可行性,实验结果与数值结果高度吻合。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel locally active memristive autapse-coupled Hopfield neural network under electromagnetic radiation
In this paper, a memristive Hopfield neural network (HNN) model in complex electromagnetic environment is established by introducing a novel locally active memristor as a connected autapse in neural network, where the effect of electromagnetic radiation is described by a quadratic nonlinear memristor. The non-volatile and locally active characteristics of the proposed locally active memristor are demonstrated by the power-off curve and DC V-I plot respectively. With the autapse connection weight and electromagnetic radiation considered,the memristive HNN model is investigated in detail by theoretical and numerical analysis. Compared with the other neural networks, the abundant dynamics can be observed in the proposed memristive HNN model when the appropriate system parameters are chosen, including stable points, periodic attractors, chaotic attractors, period doubling bifurcation, chaos crisis, coexistence multiple attractors, and so on. Besides, an analog circuit on PSIM and a digital hardware platform on FPGA are implemented to confirm the feasibility of the memristive HNN model and the experimental results are highly consistent with the numerical ones.
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来源期刊
Integration-The Vlsi Journal
Integration-The Vlsi Journal 工程技术-工程:电子与电气
CiteScore
3.80
自引率
5.30%
发文量
107
审稿时长
6 months
期刊介绍: Integration''s aim is to cover every aspect of the VLSI area, with an emphasis on cross-fertilization between various fields of science, and the design, verification, test and applications of integrated circuits and systems, as well as closely related topics in process and device technologies. Individual issues will feature peer-reviewed tutorials and articles as well as reviews of recent publications. The intended coverage of the journal can be assessed by examining the following (non-exclusive) list of topics: Specification methods and languages; Analog/Digital Integrated Circuits and Systems; VLSI architectures; Algorithms, methods and tools for modeling, simulation, synthesis and verification of integrated circuits and systems of any complexity; Embedded systems; High-level synthesis for VLSI systems; Logic synthesis and finite automata; Testing, design-for-test and test generation algorithms; Physical design; Formal verification; Algorithms implemented in VLSI systems; Systems engineering; Heterogeneous systems.
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