Md. Selim Reza, Avijit Ghosh*, Hala A. Ibrahium, Md Baharul Islam, Mehedi Hasan Apu, Md. Shamim Reza, Muhammad Ihsan Ibn Rahim and Mst. Mohona Akter,
{"title":"优化电荷传输层以提高无铅RbGeI3钙钛矿太阳能电池性能：ETL和HTL工程的综合分析","authors":"Md. Selim Reza, Avijit Ghosh*, Hala A. Ibrahium, Md Baharul Islam, Mehedi Hasan Apu, Md. Shamim Reza, Muhammad Ihsan Ibn Rahim and Mst. Mohona Akter, ","doi":"10.1021/acs.langmuir.5c0049910.1021/acs.langmuir.5c00499","DOIUrl":null,"url":null,"abstract":"<p >This study investigates innovative hybrid perovskite solar cells using rubidium–germanium-iodide (RbGeI<sub>3</sub>) as the substrate, incorporating various hole transport layers like Cu<sub>2</sub>O, CuO, and SnSe, and wide-bandgap chalcogenide electron transport layers (ETLs) like IGZO, WS<sub>2</sub>, In<sub>2</sub>S<sub>3</sub>, and ZnSe. After selecting IGZO as the optimal ETL, its depth was optimized using the SCAPS-1D simulator to evaluate device performance. Three device configurations were examined: device-I (Al/FTO/IGZO/RbGeI<sub>3</sub>/Cu<sub>2</sub>O/Ni), device-II (Al/FTO/IGZO/RbGeI<sub>3</sub>/CuO/Ni), and device-III (Al/FTO/IGZO/RbGeI<sub>3</sub>/SnSe/Ni), with a detailed analysis of the doping concentration, thickness of the layer, density of defect, operational temperature, and interface defects. Benchmarks for efficient RbGeI<sub>3</sub>-based SCs were set, with device I achieving the highest power conversion efficiency of 33.84%, fill factor of 86.78%, open-circuit voltage (<i>V</i><sub>OC</sub>) of 1.13 V, and short-circuit current density (<i>J</i><sub>SC</sub>) of 34.54 mA/cm<sup>2</sup>. Devices II and III recorded PCEs of 25.91% and 25.21%, respectively. Additionally, series-shunt resistances, generation-recombination rates, carrier dynamics, and quantum efficiency (QE %) were analyzed. Device I shows substantial potential for high-efficiency hybrid perovskite photovoltaic systems based on RbGeI<sub>3</sub>.</p>","PeriodicalId":50,"journal":{"name":"Langmuir","volume":"41 11","pages":"7865–7885 7865–7885"},"PeriodicalIF":3.9000,"publicationDate":"2025-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optimizing Charge Transport Layers to Enhance the Performance of Lead-Free RbGeI3 Perovskite Solar Cells: A Comprehensive Analysis of ETL and HTL Engineering\",\"authors\":\"Md. Selim Reza, Avijit Ghosh*, Hala A. Ibrahium, Md Baharul Islam, Mehedi Hasan Apu, Md. Shamim Reza, Muhammad Ihsan Ibn Rahim and Mst. Mohona Akter, \",\"doi\":\"10.1021/acs.langmuir.5c0049910.1021/acs.langmuir.5c00499\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p >This study investigates innovative hybrid perovskite solar cells using rubidium–germanium-iodide (RbGeI<sub>3</sub>) as the substrate, incorporating various hole transport layers like Cu<sub>2</sub>O, CuO, and SnSe, and wide-bandgap chalcogenide electron transport layers (ETLs) like IGZO, WS<sub>2</sub>, In<sub>2</sub>S<sub>3</sub>, and ZnSe. After selecting IGZO as the optimal ETL, its depth was optimized using the SCAPS-1D simulator to evaluate device performance. Three device configurations were examined: device-I (Al/FTO/IGZO/RbGeI<sub>3</sub>/Cu<sub>2</sub>O/Ni), device-II (Al/FTO/IGZO/RbGeI<sub>3</sub>/CuO/Ni), and device-III (Al/FTO/IGZO/RbGeI<sub>3</sub>/SnSe/Ni), with a detailed analysis of the doping concentration, thickness of the layer, density of defect, operational temperature, and interface defects. 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Optimizing Charge Transport Layers to Enhance the Performance of Lead-Free RbGeI3 Perovskite Solar Cells: A Comprehensive Analysis of ETL and HTL Engineering
This study investigates innovative hybrid perovskite solar cells using rubidium–germanium-iodide (RbGeI3) as the substrate, incorporating various hole transport layers like Cu2O, CuO, and SnSe, and wide-bandgap chalcogenide electron transport layers (ETLs) like IGZO, WS2, In2S3, and ZnSe. After selecting IGZO as the optimal ETL, its depth was optimized using the SCAPS-1D simulator to evaluate device performance. Three device configurations were examined: device-I (Al/FTO/IGZO/RbGeI3/Cu2O/Ni), device-II (Al/FTO/IGZO/RbGeI3/CuO/Ni), and device-III (Al/FTO/IGZO/RbGeI3/SnSe/Ni), with a detailed analysis of the doping concentration, thickness of the layer, density of defect, operational temperature, and interface defects. Benchmarks for efficient RbGeI3-based SCs were set, with device I achieving the highest power conversion efficiency of 33.84%, fill factor of 86.78%, open-circuit voltage (VOC) of 1.13 V, and short-circuit current density (JSC) of 34.54 mA/cm2. Devices II and III recorded PCEs of 25.91% and 25.21%, respectively. Additionally, series-shunt resistances, generation-recombination rates, carrier dynamics, and quantum efficiency (QE %) were analyzed. Device I shows substantial potential for high-efficiency hybrid perovskite photovoltaic systems based on RbGeI3.
期刊介绍：
Langmuir is an interdisciplinary journal publishing articles in the following subject categories:
Colloids: surfactants and self-assembly, dispersions, emulsions, foams
Interfaces: adsorption, reactions, films, forces
Biological Interfaces: biocolloids, biomolecular and biomimetic materials
Materials: nano- and mesostructured materials, polymers, gels, liquid crystals
Electrochemistry: interfacial charge transfer, charge transport, electrocatalysis, electrokinetic phenomena, bioelectrochemistry
Devices and Applications: sensors, fluidics, patterning, catalysis, photonic crystals
However, when high-impact, original work is submitted that does not fit within the above categories, decisions to accept or decline such papers will be based on one criteria: What Would Irving Do?
Langmuir ranks #2 in citations out of 136 journals in the category of Physical Chemistry with 113,157 total citations. The journal received an Impact Factor of 4.384*.
This journal is also indexed in the categories of Materials Science (ranked #1) and Multidisciplinary Chemistry (ranked #5).
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