{"title":"Probing the structural, optical absorption, dielectric and impedance properties of Sr-modified BaMnO3 ceramics","authors":"Itishree Nayak, Satyajeet Jena, Debadhyan Behera, Dilip Kumar Mishra","doi":"10.1007/s10854-025-14596-3","DOIUrl":null,"url":null,"abstract":"<div><p>This work probes the structural, optical and temperature-dependent dielectric properties of BaMnO<sub>3</sub> and Ba<sub>0.9</sub>Sr<sub>0.1</sub>MnO<sub>3</sub>multiferroic ceramics prepared by conventional solid state reaction technique. XRD analysis indicates rhombohedral perovskite structure of BaMnO<sub>3</sub>. When 10 wt.% Sr is added in the BaMnO<sub>3</sub> matrix against Ba, the rhombohedral structure transforms into hexagonal perovskite structure. The average crystallite size of BaMnO<sub>3</sub> and Ba<sub>0.9</sub>Sr<sub>0.1</sub>MnO<sub>3</sub>were found to be ~ 92 nm and ~ 63 nm, respectively. The lattice parameter and the unit cell volume also decrease with the addition of Sr in pure BaMnO<sub>3</sub>. Through EDX analysis, the presence of all the constituents in the final samples are verified. The optical band gap of BaMnO<sub>3</sub> decreases from 2.33 eV to 1.75 eV, primarily attributed to SrMnO<sub>3</sub> phase and grain boundary effects. A much higher value of dielectric constant i.e. ~ 19,800 at 200 °C with respect to 10 Hz frequency has been achieved with 10 wt.% strontium doping in BaMnO<sub>3</sub>, which may boost the efficiency of electronic devices made up of dielectric materials. The impedance analysis confirms the <b>negative temperature coefficient of resistance</b> (NTCR) behaviour of the sample and semicircular arc Nyquist plot supports the semiconducting nature with non-Debye type of relaxation mechanism in both the samples.</p></div>","PeriodicalId":646,"journal":{"name":"Journal of Materials Science: Materials in Electronics","volume":"36 9","pages":""},"PeriodicalIF":2.8000,"publicationDate":"2025-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Materials Science: Materials in Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s10854-025-14596-3","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Probing the structural, optical absorption, dielectric and impedance properties of Sr-modified BaMnO3 ceramics
This work probes the structural, optical and temperature-dependent dielectric properties of BaMnO3 and Ba0.9Sr0.1MnO3multiferroic ceramics prepared by conventional solid state reaction technique. XRD analysis indicates rhombohedral perovskite structure of BaMnO3. When 10 wt.% Sr is added in the BaMnO3 matrix against Ba, the rhombohedral structure transforms into hexagonal perovskite structure. The average crystallite size of BaMnO3 and Ba0.9Sr0.1MnO3were found to be ~ 92 nm and ~ 63 nm, respectively. The lattice parameter and the unit cell volume also decrease with the addition of Sr in pure BaMnO3. Through EDX analysis, the presence of all the constituents in the final samples are verified. The optical band gap of BaMnO3 decreases from 2.33 eV to 1.75 eV, primarily attributed to SrMnO3 phase and grain boundary effects. A much higher value of dielectric constant i.e. ~ 19,800 at 200 °C with respect to 10 Hz frequency has been achieved with 10 wt.% strontium doping in BaMnO3, which may boost the efficiency of electronic devices made up of dielectric materials. The impedance analysis confirms the negative temperature coefficient of resistance (NTCR) behaviour of the sample and semicircular arc Nyquist plot supports the semiconducting nature with non-Debye type of relaxation mechanism in both the samples.
期刊介绍:
The Journal of Materials Science: Materials in Electronics is an established refereed companion to the Journal of Materials Science. It publishes papers on materials and their applications in modern electronics, covering the ground between fundamental science, such as semiconductor physics, and work concerned specifically with applications. It explores the growth and preparation of new materials, as well as their processing, fabrication, bonding and encapsulation, together with the reliability, failure analysis, quality assurance and characterization related to the whole range of applications in electronics. The Journal presents papers in newly developing fields such as low dimensional structures and devices, optoelectronics including III-V compounds, glasses and linear/non-linear crystal materials and lasers, high Tc superconductors, conducting polymers, thick film materials and new contact technologies, as well as the established electronics device and circuit materials.